HMC-ALH102

HMC-ALH102 v01.0108 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH102 is ideal for: • Wideband Communications Receivers • Surveillance Systems • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation Features Noise Figure: 2.5 dB Gain: 11.6 dB @ 10 GHz P1dB Output Power: +10 dBm Supply Voltage: +2V @ 55 mA Die Size: 3.0 x 1.435 x 0.1 mm Functional Diagram General Description The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 11.6 dB of gain at 10 GHz, 2.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage. The HMCALH102 amplifier is ideal for integration into MultiChip-Modules (MCMs) due to its small size. Electrical Specifi cations, TA = +25° C, Vdd= 2V [1], Idd = 55mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output Power for 1 dB Compression Noise Figure Supply Current (Idd) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.5V) to achieve Idd= 55 mA 8 8 Min. Typ. 2 - 20 10 15 12 10 2.5 55 Max. Units GHz dB dB dB dBm dB mA 1 - 114 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH102 v01.0108 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Linear Gain vs. Frequency 16 Noise Figure vs. Frequency 5 1 LOW NOISE AMPLIFIERS - CHIP 1 - 115 4 NOISE FIGURE (dB) 2 6 10 14 18 22 12 GAIN (dB) 3 8 2 4 1 0 FREQUENCY (GHz) 0 2 6 10 14 18 22 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) RETURN LOSS (dB) 2 6 10 14 18 22 -5 -10 -10 -15 -15 -20 -20 -25 FREQUENCY (GHz) -25 2 6 10 14 18 22 FREQUENCY (GHz) Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd= 2.0 V, Id = 55 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH102 v01.0108 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz 1 LOW NOISE AMPLIFIERS - CHIP Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage RF Input Power Channel Temperature +3.7 Vdc -1 to +0.3 Vdc 5 dBm 180 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard WP - 10 Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 116 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH102 v01.0108 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Pad Descriptions Pad Number 1 Function RFIN Pad Description This pas is AC coupled and matched to 50 Ohms. Interface Schematic 1 Vdd Power Supply Voltage for the amplifier. See Assembly Diagram for required external components. 2 3, 5 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. This pad is AC coupled and matched to 50 Ohms. 4 RFOUT Die Bottom GND Die Bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 117 LOW NOISE AMPLIFIERS - CHIP HMC-ALH102 v01.0108 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz 1 LOW NOISE AMPLIFIERS - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible