HMC-ALH140

HMC-ALH140 v00.0907 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Features Noise Figure: 4 dB Gain: 11.5 dB P1dB Output Power: +15 dBm Supply Voltage: +4V @ 60 mA Die Size: 2.5 x 1.4 x 0.1 mm Typical Applications This HMC-ALH140 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios AMPLIFIERS - LOW NOISE - CHIP • VSAT • SATCOM Functional Diagram General Description The HMC-ALH140 is a two Stage GaAs MMIC HEMT Low Noise Amplifier die which operates between 24 and 40 GHz. The amplifier provides 11.5 dB of gain, from a bias supply of +4V @ 66 mA with a noise figure of 4 dB. The HMC-ALH140 amplifier die is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size (2.10 mm2). Electrical Specifi cations, TA = +25° C, Vdd= 4V [1], Idd = 60mA [2] Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current (Idd) 10 Min. Typ. 24 - 30 12 4 13 15 15 60 100 10 Max. Min. Typ. 24 - 40 11.5 4 13 15 15 60 100 10 Max. Min. Typ. 35 - 40 11.5 4 20 20 15 60 100 dB dB dBm mA Max. Units GHz dB [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) 0-2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH140 v00.0907 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Noise Figure vs. Frequency Linear Gain vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd= 2 V, Id = 55 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0-3 AMPLIFIERS - LOW NOISE - CHIP HMC-ALH140 v00.0907 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage RF Input Power Channel Temperature +5.5 Vdc -1 to +0.3 Vdc 6 dBm 180 °C -65 to +150 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS AMPLIFIERS - LOW NOISE - CHIP Storage Temperature Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” 0-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com