HMC-ALH140_09

HMC-ALH140 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Features Noise Figure: 4 dB Gain: 11.5 dB P1dB Output Power: +15 dBm Supply Voltage: +4V @ 60 mA Die Size: 2.5 x 1.4 x 0.1 mm 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH140 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • VSAT • SATCOM Functional Diagram General Description The HMC-ALH140 is a two Stage GaAs MMIC HEMT Low Noise Amplifier die which operates between 24 and 40 GHz. The amplifier provides 11.5 dB of gain, from a bias supply of +4V @ 60 mA with a noise figure of 4 dB. The HMC-ALH140 amplifier die is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size (3.5 mm2). Electrical Specifi cations, TA = +25° C, Vdd= 4V [1], Idd = 60mA [2] Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current (Idd) 10 Min. Typ. 24 - 30 12 4 13 15 15 60 100 10 Max. Min. Typ. 24 - 40 11.5 4 13 15 15 60 100 10 Max. Min. Typ. 35 - 40 11.5 4 20 20 15 60 100 dB dB dBm mA Max. Units GHz dB [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd total = 60 mA 1 - 120 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH140 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Linear Gain vs. Frequency 14 12 Noise Figure vs. Frequency 5 1 LOW NOISE AMPLIFIERS - CHIP 1 - 121 4 10 GAIN (dB) 8 6 4 2 0 20 25 30 35 40 45 FREQUENCY (GHz) 0 35 36 37 38 39 40 FREQUENCY (GHz) NOISE FIGURE (dB) RETURN LOSS (dB) 20 25 30 35 40 45 3 2 1 Input Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 FREQUENCY (GHz) Output Return Loss vs. Frequency 0 -5 -10 -15 -20 -25 -30 20 25 30 35 40 45 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH140 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz 1 LOW NOISE AMPLIFIERS - CHIP Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage RF Input Power Channel Temperature Operating Temperature Storage Temperature +5.5 Vdc -1 to +0.3 Vdc 6 dBm 180 °C -55 to +85 °C -65 to +150 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 122 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH140 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 1 Power Supply Voltage for the amplifier. See assembly for required external components. 2, 6 Vdd 3, 5 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. This pad is AC coupled and matched to 50 Ohms. 4 RFOUT Die bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 123 LOW NOISE AMPLIFIERS - CHIP HMC-ALH140 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz 1 LOW NOISE AMPLIFIERS - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of