HMC-ALH216

HMC-ALH216 v03.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH216 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation Features Noise Figure: 2.5 dB @ 20 GHz Gain: 18 dB P1dB Output Power: +14 dBm Supply Voltage: +4V @ 90 mA Die Size: 2.25 x 1.58 x 0.1 mm Functional Diagram General Description The HMC-ALH216 is a GaAs MMIC HEMT Wideband Low Noise Amplifier die which operates between 14 and 27 GHz. The amplifier provides 18 dB of gain, 2.5 dB noise figure and +14 dBm of output power at 1 dB gain compression while requiring only 90 mA from a +4V supply voltage. The HMC-ALH216 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size. Electrical Specifi cations*, TA = +25° C, Vdd= +4V Parameter Frequency Range Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Supply Current (Idd) (Vdd = 4V, Vgg = -0.5 Typ.) *Unless otherwise indicated, all measurements are from probed die 14 Min. Typ. 14 - 27 18 0.02 2.7 15 15 90 4.5 Max. Units GHz dB dB / °C dB dB dB mA 1 - 126 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH216 v03.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Noise Figure vs. Frequency 2.8 Linear Gain vs. Frequency 20 19.5 1 LOW NOISE AMPLIFIERS - CHIP 1 - 127 GAIN (dB) 18.5 18 NOISE FIGURE (dB) 19 2.6 2.4 17.5 17 16.5 16 15 17 19 21 23 25 27 FREQUENCY (GHz) 2.2 2 1.8 15 17 19 21 23 25 27 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 15 17 19 21 23 25 27 FREQUENCY (GHz) Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 15 17 19 21 23 25 27 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH216 v03.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz 1 LOW NOISE AMPLIFIERS - CHIP Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage RF Input Power Channel Temperature Continuous Pdiss (T=85°C) (derate 14.9 mW/C above 85°C) Thermal Resistance (Channel to die bottom) Storage Temperature Operating Temperature +5.5 Vdc -1 to +0.3 Vdc 6 dBm 180 °C 1.4 W 67 °C/W -65 to +150 °C -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-1 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 128 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH216 v03.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Power Supply Voltage for the amplifier. See assembly for required external components. Interface Schematic 1 Vdd 2, 6 3, 5 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. This pad is AC coupled and matched to 50 Ohms. Die bottom must be connected to RF/DC ground. 4 RFOUT Die bottom GND For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 129 LOW NOISE AMPLIFIERS - CHIP HMC-ALH216 v03.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz 1 LOW NOISE AMPLIFIERS - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of