HMC-ALH244_09

HMC-ALH244 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Features Noise Figure: 3.5 dB Gain: 12 dB 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH244 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios P1dB Output Power: +13 dBm • VSAT Supply Voltage: +4V @ 45 mA • SATCOM Die Size: 2.50 x 1.4 x 0.1 mm Functional Diagram General Description The HMC-ALH244 is a two stage GaAs MMIC HEMT Low Noise Amplifier die which operates between 24 and 40 GHz. The amplifier provides 12 dB of gain, a noise figure of 3.5 dB, and requires only 45 mA from a +4V supply voltage. The HMC-ALH244 amplifier die is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size (3.5 mm2). Electrical Specifi cations [1], TA = +25° C, Vdd= 4V, Idd = 45mA [2] Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current (Idd) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (-0.2V Typ.) to achieve Iddtotal = 45 mA 10 Min. Typ. 24 - 40 12 3.5 15 17 13 45 100 4 Max. Units GHz dB dB dB dB dBm mA 1 - 132 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH244 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Linear Gain vs. Frequency 16 14 Noise Figure vs. Frequency 5 1 LOW NOISE AMPLIFIERS - CHIP 1 - 133 GAIN (dB) 10 8 6 4 2 0 20 25 30 35 40 45 FREQUENCY (GHz) NOISE FIGURE (dB) 12 4 3 2 1 0 20 25 30 35 40 45 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 20 25 30 35 40 45 FREQUENCY (GHz) Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 20 25 30 35 40 45 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH244 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz 1 LOW NOISE AMPLIFIERS - CHIP Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage RF Input Power Channel Temperature Storage Temperature Operating Temperature +5.5 Vdc -1 to +0.3 Vdc 6 dBm 180 °C -65 to +150 °C -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 134 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH244 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Pad Descriptions Pad Number Function Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 1 RFIN 1 2, 6 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. 3, 5 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. Die bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 135 LOW NOISE AMPLIFIERS - CHIP HMC-ALH244 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz 1 LOW NOISE AMPLIFIERS - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of