HMC-ALH313_09

HMC-ALH313 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz Features Noise Figure: 3 dB Gain: 20 dB P1dB Output Power: +12 dBm Supply Voltage: +2.5V @ 52 mA Die Size: 1.80 x 0.73 x 0.1 mm 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH313 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • VSAT • Test Equipment & Sensors • Military & Space Functional Diagram General Description The HMC-ALH313 is a three stage GaAs MMIC HEMT Low Noise Amplifier die which operates between 27 and 33 GHz. The amplifier provides 20 dB of gain, a 3 dB noise figure and +12 dBm of output power at 1 dB gain compression while requiring only 52 mA from a +2.5V supply voltage. This amplifier die is ideal for use as a LNA or driver amplifier, and may be easily integrated into Multi-Chip-Modules (MCMs) due to its small size (1.30 mm2) . Electrical Specifi cations [1], TA = +25° C, Vdd= 2.5V, Idd = 52mA [2] Parameter Frequency Range Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.3V) to achieve Idd total = 52 mA 10 18 Min. Typ. 27 - 33 20 0.03 3 12 14 12 52 3.5 Max. Units GHz dB dB / °C dB dB dB dBm mA 1 - 150 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH313 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz Linear Gain vs. Frequency 25 Noise Figure vs. Frequency 5 1 LOW NOISE AMPLIFIERS - CHIP 1 - 151 20 NOISE FIGURE (dB) 26 27 28 29 30 31 32 33 34 GAIN (dB) 4 15 3 10 2 5 1 0 FREQUENCY (GHz) 0 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH313 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz 1 LOW NOISE AMPLIFIERS - CHIP Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage RF Input Power Channel Temperature Storage Temperature Operating Temperature +5 Vdc -1 to +0.3 Vdc -3 dBm 180 °C -65 to +150 °C -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-5 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 152 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH313 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz Pad Descriptions Pad Number 1 2 Function RFIN RFOUT Description This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. Power Supply Voltage for the amplifier. See assembly for required external components. Interface Schematic 1 LOW NOISE AMPLIFIERS - CHIP 1 - 153 3 Vdd 4 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Die bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH313 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz 1 LOW NOISE AMPLIFIERS - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of