HMC-ALH364

HMC-ALH364 v03.0609 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 32 GHz Features Excellent Noise Figure: 2 dB Gain: 21 dB P1dB Output Power: +7 dBm Supply Voltage: +5V @ 68 mA Die Size: 1.49 x 0.73 x 0.1 mm 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH364 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • VSAT • SATCOM Functional Diagram General Description The HMC-ALH364 is a GaAs MMIC HEMT three stage, self-biased Low Noise Amplifier die which operates between 24 and 32 GHz. The amplifier provides 21 dB of gain, a 2 dB noise figure and +7 dBm of output power at 1 dB gain compression while requiring only 68 mA from a single +5V supply. The HMC-ALH364 amplifier die is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size (1.09)mm2. Electrical Specifi cations*, TA = +25° C, Vdd= +5V Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current *Unless otherwise indicated, all measurements are from probed die 5 18 Min. Typ. 24 - 32 21 2 12 8 7 68 3 Max. Units GHz dB dB dB dB dBm mA 1 - 156 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH364 v03.0609 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 32 GHz Noise Figure vs. Frequency 6 5 NOISE FIGURE (dB) 4 3 2 1 0 20 24 28 32 36 40 20 24 28 32 36 40 FREQUENCY (GHz) FREQUENCY (GHz) Linear Gain vs. Frequency 25 1 LOW NOISE AMPLIFIERS - CHIP 1 - 157 20 GAIN (dB) 15 10 5 0 Input Return Loss vs. Frequency 0 -5 -10 -15 -20 -25 -30 20 24 28 32 36 40 FREQUENCY (GHz) Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 20 24 28 32 36 40 FREQUENCY (GHz) RETURN LOSS (dB) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH364 v03.0609 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 32 GHz 1 LOW NOISE AMPLIFIERS - CHIP Absolute Maximum Ratings Drain Bias Voltage Drain Bias Current RF Input Power Channel Temperature Storage Temperature Operating Temperature +5.5 Vdc 130 mA -9 dBm 180 °C -65 to +150 °C -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-5 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 158 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH364 v03.0609 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 32 GHz Pad Descriptions Pad Number 1 2 Function RFIN RFOUT Description This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. Power Supply Voltage for the amplifier. See assembly for required external components. Interface Schematic 1 LOW NOISE AMPLIFIERS - CHIP 1 - 159 3 Vdd Die bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH364 v03.0609 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 32 GHz 1 LOW NOISE AMPLIFIERS - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of