HMC-ALH369
v00.1007
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz
Features
Excellent Noise Figure: 2.0 dB Gain: 22 dB P1dB Output Power: +11 dBm Supply Voltage: +5V @ 66 mA Die Size: 2.10 x 1.37 x 0.1 mm
Typical Applications
This HMC-ALH369 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios
AMPLIFIERS - LOW NOISE - CHIP
• Phased Arrays • VSAT • SATCOM
Functional Diagram
General Description
The HMC-ALH369 is a GaAs MMIC HEMT three stage, self-biased Low Noise Amplifier die which operates between 24 and 40 GHz. The amplifier provides 22 dB of gain, from a single bias supply of +5V @ 66 mA with a noise figure of 2 dB. The HMC-ALH369 amplifier die is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size (2.88 mm2).
Electrical Specifi cations [1], TA = +25° C, Vdd= +5V, Idd = 66mA
Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current (Idd) 9 20 Min. Typ. 24 - 32 22 2 12 12 11 66 9 2.5 15 Max. Min. Typ. 32 - 40 17 2.1 8 12 11 66 2.5 Max. Units GHz dB dB dB dB dBm mA
[1] Unless otherwise indicated, all measurements are from probed die
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-ALH369
v00.1007
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz
Linear Gain vs. Frequency Noise Figure vs. Frequency
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd= 5V, Id = 66 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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AMPLIFIERS - LOW NOISE - CHIP
HMC-ALH369
v00.1007
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz
Absolute Maximum Ratings
Drain Bias Voltage RF Input Power (24 - 32 GHz) RF Input Power (32 - 40 GHz) Channel Temperature +5.5 Vdc 5 dBm -1 dBm 180 °C -65 to +150 °C -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
AMPLIFIERS - LOW NOISE - CHIP
Storage Temperature Operating Temperature
Outline Drawing
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002”
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
