HMC-ALH376

HMC-ALH376 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz Features Noise Figure: 2 dB Gain: 16 dB @ 40 GHz P1dB Output Power: +6 dBm Supply Voltage: +4V @ 87 mA Die Size: 2.7 x 1.44 x 0.1 mm 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH376 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military & Space Functional Diagram General Description The HMC-ALH376 is a GaAs MMIC HEMT three stages, self-biased Low Noise Amplifier die which operates between 35 and 45 GHz. The amplifier provides 16 dB of gain, a 2 dB noise figure and +6 dBm of output power at 1 dB gain compression while requiring only 87 mA from a single +4V supply. This self-biased LNA is ideal for integration into hybrid assemblies or Multi-Chip-Modules (MCMs) due to its small size (3.9 mm2). Electrical Specifi cations*, TA = +25° C, Vdd= +4V Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current (Idd) (Vdd= +4V) *Unless otherwise indicated, all measurements are from probed die 15 Min. Typ. 35 - 40 16 2 10 16 6 87 3 10 Max. Min. Typ. 40 - 45 12 2.2 17 18 6 87 3 Max. Units GHz dB dB dB dB dBm mA 1 - 168 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH376 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz Linear Gain vs. Frequency 25 Noise Figure vs. Frequency 5 1 LOW NOISE AMPLIFIERS - CHIP 1 - 169 20 NOISE FIGURE (dB) 35 37 39 41 43 45 GAIN (dB) 4 15 3 10 2 5 1 0 FREQUENCY (GHz) 0 35 37 39 41 43 45 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 35 37 39 41 43 45 FREQUENCY (GHz) Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 35 37 39 41 43 45 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH376 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz 1 LOW NOISE AMPLIFIERS - CHIP Absolute Maximum Ratings Drain Bias Voltage RF Input Power (35 - 40 GHz) RF Input Power (40 - 45 GHz) Channel Temperature Storage Temperature Operating Temperature +5.5 Vdc -5 dBm -1 dBm 180 °C -65 to +150 °C -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 170 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH376 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Power Supply Voltage for the amplifier. See assembly for required external components. This pad is AC coupled and matched to 50 Ohms. Die bottom must be connected to RF/DC ground. Interface Schematic 1 Vdd 2 3 RFOUT Die bottom GND For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 171 LOW NOISE AMPLIFIERS - CHIP HMC-ALH376 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz 1 LOW NOISE AMPLIFIERS - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of