HMC-ALH444_10

HMC-ALH444 v03.0410 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Features Noise Figure: 1.75 dB @ 10 GHz Gain: 17 dB P1dB Output Power: +19 dBm @ 5 GHz Supply Voltage: +5V @ 55 mA Die Size: 2.64 x 1.64 x 0.1 mm 1 AMPLIFIERS - LOW NOISE - CHIP Typical Applications This HMC-ALH444 is ideal for: • Wideband Communication Systems • Surveillance Systems • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation * VSAT Functional Diagram General Description The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 1 and 12 GHz. The amplifier provides 17 dB of gain, 1.5 dB noise figure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage. Electrical Specifi cations*, TA = +25° C, Vdd= +5V Parameter Frequency Range Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output IP3 Output Power for 1 dB Compression Supply Current (Idd) (Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ) *Unless otherwise indicated, all measurements are from probed die 15 Min. Typ. 1 - 12 17 0.02 1.5 10 14 28 19 55 2 Max. Units GHz dB dB / °C dB dB dB dBm dBm mA 1 - 186 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-ALH444 v03.0410 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Linear Gain vs. Frequency 20 18 14 GAIN (dB) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 16 Noise Figure vs. Frequency 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 1 AMPLIFIERS - LOW NOISE - CHIP 1 - 187 Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) NOISE FIGURE (dB) -10 -15 -20 -25 -30 -35 -10 -15 -20 0 2 4 6 8 10 12 14 FREQUENCY (GHz) -40 0 2 4 6 8 10 12 14 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-ALH444 v03.0410 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz 1 AMPLIFIERS - LOW NOISE - CHIP Absolute Maximum Ratings Drain Bias Voltage RF Input Power Gate Bias Voltage Vgg1 Gate Bias Voltage Vgg2 Thermal Resistance (channel to die bottom) Channel Temperature Storage Temperature Operating Temperature +5.5 Vdc 12 dBm -1 to 0.3 Vdc 0 to 2.5 Vdc 109 °C/W 180 °C -65 to +150 °C -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-1 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 188 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-ALH444 v03.0410 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. Interface Schematic 1 AMPLIFIERS - LOW NOISE - CHIP 1 - 189 2 RFOUT 3 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. 4, 5 Vgg1, Vgg2 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Die bottom GND Die bottom must be connected to RF/DC ground. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-ALH444 v03.0410 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz 1 AMPLIFIERS - LOW NOISE - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of