HMC-ALH445_10

HMC-ALH445 v03.0410 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Features Noise Figure: 3.9 dB @ 28 GHz Gain: 9 dB P1dB Output Power: +12 dBm @ 28 GHz Supply Voltage: +5V @ 45 mA Die Size: 1.6 x 1.6 x 0.1 mm 1 AMPLIFIERS - LOW NOISE - CHIP Typical Applications This HMC-ALH445 is ideal for: • Wideband Communication Systems • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation Functional Diagram General Description The HMC-ALH445 is a GaAs MMIC HEMT self-biased, wideband Low Noise Amplifier die which operates between 18 and 40 GHz. The amplifier provides 9 dB of gain, 3.9 dB noise figure at 28 GHz and +12 dBm of output power at 1 dB gain compression while requiring only 45 mA from a single +5V supply. The HMC-ALH445 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size. Electrical Specifi cations*, TA = +25° C, Vdd= +5V Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current (Idd) (Vdd = 5V) *Unless otherwise indicated, all measurements are from probed die 8 Min. Typ. 18 - 28 9 4 10 15 12 45 5 8 Max. Min. Typ. 28 - 40 10 3.9 10 15 13 45 4.5 Max. Units GHz dB dB dB dB dBm mA 1 - 192 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-ALH445 v03.0410 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Gain vs. Temperature 14 Broadband Gain vs. Return Loss 15 10 1 AMPLIFIERS - LOW NOISE - CHIP 1 - 193 12 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz) 36 38 40 10 15 20 25 30 35 FREQUENCY (GHz) 40 45 50 S21 S11 S22 GAIN (dB) 10 8 +25C +85C - 55C 6 4 Input Return Loss vs. Frequency -10 Output Return Loss vs. Frequency -10 -15 RETURN LOSS (dB) RETURN LOSS (dB) -15 -20 -20 +25C +85C - 55C -25 +25C +85C - 55C -25 -30 -30 -35 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz) 36 38 40 -35 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz) 36 38 40 Reverse Isolation vs. Temperature -10 +25C +85C - 55C Noise Figure vs. Frequency RETURN LOSS (dB) -15 -20 -25 -30 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz) 36 38 40 Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd1 = 5V, Id1 = 45 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-ALH445 v03.0410 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz 1 AMPLIFIERS - LOW NOISE - CHIP On-Wafer P1dB vs. Frequency Absolute Maximum Ratings Drain Bias Voltage Drain Bias Current RF Input Power Thermal Resistance (channel to die bottom) Channel Temperature Storage Temperature Operating Temperature +5.5 Vdc 60 mA 10 dBm 201.2 °C/W 180 °C -65 to +150 °C -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-1 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 194 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-ALH445 v03.0410 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 1 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. 2, 4 3 RFOUT This pad is AC coupled and matched to 50 Ohms. Die bottom must be connected to RF/DC ground. Die bottom GND Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of