HMC-ALH476

HMC-ALH476 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Features Noise Figure: < 2 dB @ 20 GHz Gain: 20 dB P1dB Output Power: +14 dBm Supply Voltage: +4V @ 90 mA Die Size: 2.25 x 1.58 x 0.1 mm 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH476 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation Functional Diagram General Description The HMC-ALH476 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 14 and 27 GHz. The amplifier provides 20 dB of gain, 2 dB noise figure and +14 dBm of output power at 1 dB gain compression while requiring only 90 mA from a +4V supply voltage. The HMC-ALH476 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size. Electrical Specifi cations, TA = +25° C, Vdd= +4V Parameter Frequency Range Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current (Idd) (Vdd = 4V, Vgg = -0.3V Typ.) *Unless otherwise indicated, all measurements are from probed die 18 Min. Typ. 14 - 18 20 0.02 2.5 16 18 14 90 3 18 Max. Min. Typ. 18 - 27 20 0.02 2 17 20 14 90 2.6 Max. Units GHz dB dB / °C dB dB dB dBm mA 1 - 198 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH476 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Linear Gain vs. Frequency 25 Noise Figure vs. Frequency 5 1 LOW NOISE AMPLIFIERS - CHIP 1 - 199 20 NOISE FIGURE (dB) 13 15 17 19 21 23 25 27 GAIN (dB) 4 15 3 10 2 5 1 0 FREQUENCY (GHz) 0 13 15 17 19 21 23 25 27 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 13 15 17 19 21 23 25 27 FREQUENCY (GHz) Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 13 15 17 19 21 23 25 27 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH476 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz 1 LOW NOISE AMPLIFIERS - CHIP Absolute Maximum Ratings Drain Bias Voltage RF Input Power Gate Bias Voltage Thermal Resistance (Channel to die bottom) Channel Temperature Storage Temperature Operating Temperature +4.5V -2 dBm -1 to 0.3V 44.6 °C/W 180 °C -65 to +150 °C -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-1 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 200 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH476 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 1 Power Supply Voltage for the amplifier. See assembly for required external components. 2, 6 Vdd 3, 5 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. Die bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 201 LOW NOISE AMPLIFIERS - CHIP HMC-ALH476 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz 1 LOW NOISE AMPLIFIERS - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of