HMC-APH460

HMC-APH460 v02.0208 GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz Typical Applications This HMC-APH460 is ideal for: • Point-to-Point Radios Features Output IP3: +37 dBm P1dB: +28 dBm Gain: 14 dB Supply Voltage: +5V 50 Ohm Matched Input/Output Die Size: 3.10 x 1.26 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • VSAT • Military & Space Functional Diagram General Description The HMC-APH460 is a two stage GaAs HEMT MMIC 0.5 Watt Power Amplifier which operates between 27 and 31.5 GHz. The HMC-APH460 provides 14 dB of gain, and an output power of +28 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH460 GaAs HEMT MMIC 0.5 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations[1], TA = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 900 mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1dB Compression (P1dB) Output Third Order Intercept (IP3) Saturated Output Power (Psat) Supply Current (Idd1+Idd2) 12 Min. Typ. 27 - 31.5 14 7 10 28 37 30 900 Max. Units GHz dB dB dB dBm dBm dBm mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd1 = 300 mA, Idd2 = 600 mA 3 - 172 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH460 v02.0208 GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz Linear Gain vs. Frequency 18 16 Fixtured Pout vs. Frequency 41 39 POUT (dBm), IP3 (dB) 37 35 33 31 29 27 25 P1dB P3dB IP3@18dBm/Tone 14 GAIN (dB) 12 10 8 6 4 2 0 26 27 28 29 30 31 32 FREQUENCY (GHz) 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 173 26 27 28 29 30 31 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) RETURN LOSS (dB) 26 27 28 29 30 31 32 -5 -10 -10 -15 -15 -20 -20 -25 FREQUENCY (GHz) -25 26 27 28 29 30 31 32 FREQUENCY (GHz) Wideband Linear Gain vs. Frequency For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH460 v02.0208 GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage +5.5 Vdc -1 to +0.3 Vdc 20 dBm 69.7 °C/W -65 °C to + 150 °C 33 °C * 63 °C * 3 LINEAR & POWER AMPLIFIERS - CHIP RF Input Power Thermal Resistance Channel to Die Bottom Storage Temperature Die Bottom Temperature for MTTF of 10 6 Hours Die Bottom Temperature for MTTF of 10 5 Hours ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS * Maximum junction temperature for die bottom at 85 °C is simulated to be 232 °C. MTTF in this condition is estimated to be 5 x 104 hrs. Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 174 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH460 v02.0208 GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. Interface Schematic 2 RFOUT 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 175 3 Vdd1 Power Supply Voltage for the amplifier. See assembly for required external components. 5 Vdd2 Power Supply Voltage for the amplifier. See assembly for required external components. 4, 6 Vgg1, Vgg2 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH460 v02.0208 GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of