HMC-APH510

HMC-APH510 v03.0709 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Typical Applications This HMC-APH510 is ideal for: • Point-to-Point Radios Features Output IP3: +35 dBm P1dB: +26 dBm Gain: 20 dB Supply Voltage: +5V 50 Ohm Matched Input/Output 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • Military & Space Die Size: 3.76 x 0.92 x 0.1 mm Functional Diagram General Description The HMC-APH510 is a high dynamic range, three stage GaAs HEMT MMIC Medium Power Amplifier which operates between 37 and 40 GHz. The HMCAPH510 provides 20 dB of gain, and an output power of +26 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH510 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = Vdd3 = 5V, Idd1 + Idd2 + Idd3 = 640 mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1dB Compression (P1dB) Output Third Order Intercept (IP3) Supply Current (Idd1+Idd2+Idd3) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ. -0.5V) to achieve Idd total = 640 mA 25 33 18 Min. Typ. 37 - 40 20 16 7 26 35 640 Max. Units GHz dB dB dB dBm dBm mA 3 - 196 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH510 v03.0709 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Linear Gain vs. Frequency 22 20 18 16 14 12 10 36 37 38 39 40 41 42 FREQUENCY (GHz) Fixtured Pout vs. Frequency 38 36 34 POUT (dB) GAIN (dB) 32 30 28 26 24 22 36 37 38 P1dB P3 @ 18dBm/ Tone 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 197 39 40 41 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 -4 -8 -12 -16 -20 -24 -28 36 37 38 39 40 41 42 FREQUENCY (GHz) Output Return Loss vs. Frequency 0 -4 RETURN LOSS (dB) -8 -12 -16 -20 -24 -28 36 37 38 39 40 41 42 FREQUENCY (GHz) RETURN LOSS (dB) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH510 v03.0709 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage +5.5 Vdc -1 to +0.3 Vdc 10 dBm 42.2 °C/W 180 °C -65 °C to +150 °C 110 mA 300 mA 300 mA 3 LINEAR & POWER AMPLIFIERS - CHIP RF Input Power Thermal Resistance (Channel to die bottom) Channel Temperature Storage Temperature Drain Bias Current (Idd1) Drain Bias Current (Idd2) Drain Bias Current (Idd3) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 198 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH510 v03.0709 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Pad Descriptions Pad Number 1 2 Function RFIN RFOUT Description This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. Interface Schematic 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 199 6, 8 Vdd1, Vdd2 Power Supply Voltage for the amplifier. See assembly for required external components. 3, 4 Vdd3 Power Supply Voltage for the amplifier. See assembly for required external components. 5, 7, 9 Vgg1, Vgg2, Vgg3 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH510 v03.0709 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of