HMC-APH518

HMC-APH518 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 21 - 24 GHz Features Output IP3: +39 dBm P1dB: +30.5 dBm Gain: 17 dB Supply Voltage: +5V 50 Ohm Matched Input/Output Die Size: 4.49 x 1.31 x 0.1 mm Typical Applications This HMC-APH518 is ideal for: • Point-to-Point Radios 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • VSAT • Military & Space Functional Diagram General Description The HMC-APH518 is a two stage GaAs HEMT MMIC 1 Watt Power Amplifier which operates between 21 and 24 GHz. The HMC-APH518 provides 17 dB of gain, and an output power of +30.5 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH518 GaAs HEMT MMIC 1 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations[1], TA = +25° C, Vdd1=Vdd2= 5V, Idd1+Idd2= 950 mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1dB Compression (P1dB) Output Third Order Intercept (IP3) Supply Current (Idd1+Idd2) 28 37 16 Min. Typ. 21 - 24 17 15 8 30.5 39 950 Max. Units GHz dB dB dB dBm dBm mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA 3 - 202 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH518 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 21 - 24 GHz Linear Gain vs. Frequency 20 Fixtured Pout vs. Frequency 42 40 POUT (dBm), IP3 (dB) 16 GAIN (dB) 38 36 34 32 30 P1dB IP3 @ 18dBm/tone 12 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 203 8 4 0 21 21.5 22 22.5 23 23.5 24 FREQUENCY (GHz) 28 21 22 23 24 25 26 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) Output Return Loss vs. Frequency 0 -2 RETURN LOSS (dB) -4 -6 -8 -10 -12 -14 -10 -15 -20 -25 -30 21 21.5 22 22.5 23 23.5 24 FREQUENCY (GHz) 21 21.5 22 22.5 23 23.5 24 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH518 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 21 - 24 GHz Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage +5.5 Vdc -1 to +0.3 Vdc 15 dBm 23.9 °C/W 180 °C -65 °C to +150 °C 600 mA 670 mA 3 LINEAR & POWER AMPLIFIERS - CHIP RF Input Power Thermal Resistance (Channel to die bottom) Channel Temperature Storage Temperature Drain Bias Current (Idd1) Drain Bias Current (Idd2) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 204 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH518 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 21 - 24 GHz Pad Descriptions Pad Number Function Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 1 RFIN 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 205 2 RFOUT This pad is AC coupled and matched to 50 Ohms. 3, 5 Vdd1, Vdd2 Power Supply Voltage for the amplifier. See assembly for required external components. 4, 6 Vgg1, Vgg2 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH518 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 21 - 24 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of