HMC-APH634

HMC-APH634 v00.0110 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications This HMC-APH634 is ideal for: • Short Haul / High Capacity Links Features High Gain: 12 dB High P1dB: +19 dBm Bias Supply: +4V 50 Ohm Matched Input/Output Die Size: 2.57 x 1.70 x 0.05 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Wireless LAN Bridges • Military & Space • E-Band Communication Systems Functional Diagram General Description The HMC-APH634 is a two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 81 and 86 GHz. The HMC-APH634 provides 12 dB of gain, and an output power of up to +20 dBm at 1 dB compression from a +4V supply. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH634 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1dB Compression (P1dB) Supply Current (Idd1+Idd2) [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1=Vgg2 between -0.8V to +0.3V (typ. -0.1V) to achieve Idd total = 240mA 7 Min. Typ. 81 - 86 12 7 8 19 240 Max. Units GHz dB dB dB dBm mA 3 - 250 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH634 v00.0110 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Linear Gain vs. Frequency 15 Fixtured Pout vs. Frequency 25 20 P1dB (dBm) 10 GAIN (dB) 3 80 82 84 86 88 90 15 5 10 0 80 82 84 86 88 90 5 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 0 -5 -5 -10 -10 -15 80 82 84 86 88 90 -15 80 82 84 86 88 90 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 251 LINEAR & POWER AMPLIFIERS - CHIP RETURN LOSS (dB) RETURN LOSS (dB) HMC-APH634 v00.0110 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage +4.5V -0.8 to +0.3V 13 dBm 61.6 °C/W 180 °C -65 °C to +150 °C -55 °C to +85 °C 100mA 200mA 3 LINEAR & POWER AMPLIFIERS - CHIP RF Input Thermal Resistance (Channel to die bottom) Channel Temperature Storage Temperature Operating Temperature Drain Bias Current (Idd1) Drain Bias Current (Idd2) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-1 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. BACKSIDE METALLIZATION: GOLD. 3. BACKSIDE METAL IS GROUND. 4. BOND PAD METALLIZATION: GOLD. 5. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 6. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 252 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH634 v00.0110 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 2, 4 Vgg1, Vgg2 Gate control voltage for the amplifier, adjust to achieve Idd total = 240mA ± 10mA. See assembly diagram for required external components. 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 253 3, 5 Vdd1, Vdd2 Drain Supply Voltage for the amplifier. See assembly diagram for required external components. 6 RFOUT This pad is AC coupled and matched to 50 Ohms. Die bottom must be connected to RF/DC ground. Die Bottom GND For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH634 v00.0110 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of