HMC-AUH249_10

HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Features small signal Gain: 15 dB Output voltage: up to 8v pk-pk psat Output power: +23 dBm high speed performance: >35 Ghz 3 dB Bandwidth supply voltage: +5v @ 200 ma small die size: 2.2 x 1.80 x 0.1 mm Typical Applications this hMc-auh249 is ideal for: • Fiber Optic Modulator driver • Gain Block for test & Measurement equipment • point-to-point/ point-to-Multi-point radios 4 Optical & MOdulatOr drivers - chip • Wideband communication & surveillance systems • radar Warning systems • Military & space Functional Diagram General Description the hMc-auh249 is a Gaas MMic heMt distributed driver amplifier die which operates between dc and 35 Ghz and provides a typical 3 dB bandwidth of 37 Ghz. the amplifier provides 15 dB of gain and +23 dBm of saturated output power while requiring only 200 ma from a +5v supply. the hMc-auh249 exhibits very good gain and phase ripple beyond 25 Ghz and can output greater than 8v peak-topeak, making it ideal for use in broadband wireless, fiber optic communication and test equipment applications. the amplifier die occupies less than 4 mm² which facilitates easy integration into Multichip-Modules (McMs). the hMc-auh249 requires a bias-tee as well as off-chip blocking components and bypass capacitors for the dc supply lines. vgg1 adjusts the bias current for the device while vgg2 adjusts the output gain. Electrical Specifications [1], TA = +25 °C, Vdd = 5V, Vgg2 = 1.5V parameter Gain Bandwidth (3 dB) Gain variation Group delay variation power Output at 1 dB compression power Output at saturation Maximum Output amplitude input return loss Output return loss power dissipation supply current (idd) [1] unless otherwise indicated, all measurements are from die in a test fixture. [2] adjust vgg1 between -1.0v to 0v to achieve idd = 200 ma. dc - 20 Ghz dc - 35 Ghz dc - 20 Ghz dc - 35 Ghz dc - 35 Ghz dc - 25 Ghz dc - 5 Ghz dc - 5 Ghz Min. typ. 15 >35 ±1 ±10 21 23 8 15 9 13 7 1 200 Max. units dB Ghz dB ps dBm dBm vpp dB dB dB dB W ma 4-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Group Delay vs. Frequency 250 Gain vs. Frequency 18 14 10 GAIN (dB) 6 2 -2 -6 -10 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) GROUP DELAY (psec) 230 210 190 170 4 10 15 20 25 30 35 40 FREQUENCY (GHz) 150 Input Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 -10 -15 -20 -25 -30 -35 -40 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) Fixtured Pout vs. Frequency 24 22 20 POUT (dBm) 18 16 14 12 10 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz) P1dB P3dB For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 4-2 Optical & MOdulatOr drivers - chip HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz 12.5 Gb/s Eye Diagram [1] electrOstatic seNsitive device OBserve haNdliNG precautiONs 4 Optical & MOdulatOr drivers - chip Absolute Maximum Ratings drain Bias voltage (vdd) rF input power channel temperature storage temperature Operating temperature +7 vdc +10 dBm 180 °c -65 to +150 °c -55 to +110 °c Recommended Operating Conditions parameter positive supply voltage (vdd) positive supply current Bias current adjust (vgg1) Output voltage adjust (vgg2) rF input power -1 0.3 Min. typ. 5 200 -0.5 1.5 Max. 6 230 0 1.5 4 units v ma v v dBm [1] input 12.5 Gb/s data stream, 01.0v, prBs 2ˆ31-1 4-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Outline Drawing 4 Optical & MOdulatOr drivers - chip 4-4 Die Packaging Information [1] standard Gp-1 (Gel pack) alternate [2] NOtes: 1. all diMeNsiONs are iN iNches [MM]. 2. tYpical BONd pad is .004” sQuare. 3. BacKside MetalliZatiON: GOld. 4. BacKside Metal is GrOuNd. 5. BONd pad MetalliZatiON: GOld. 6. cONNectiON NOt reQuired FOr uNlaBeled BONd pads. 7. Overall die siZe ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Pin Descriptions pin Number 1 Function rFiN description dc coupled. Blocking cap is needed. interface schematic 2 res1 ac coupled 50Ω termination. 4 Optical & MOdulatOr drivers - chip 3 vgg2 Gate control for amplifier. please follow “MMic amplifier Biasing procedure” application note. see assembly for required external components. rF output and dc bias (vdd) for the output stage. Gate control for amplifier. please follow “MMic amplifier Biasing procedure” application note. see assembly for required external components. 4 rFOut & vdd 6 vgg1 5 res2 ac coupled 35Ω termination. die Bottom GNd die Bottom must be connected to rF/dc ground. Application Circuit 4-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Assembly Diagram 4 Optical & MOdulatOr drivers - chip Note 1: drain Bias (vdd) must be applied through a broadband bias tee or external bias network For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 4-6 HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Device Mounting • 1 mil diameter wire bonds are used on vgg1 and vgg2 connections to the capacitors and 27Ω resistors. • 0.5mil x 3mil ribbon bonds are used on rF connections • capacitors and resistors on vgg1 and vgg2 are used to filter low frequency,