HMC-AUH256

HMC-AUH256 v00.0907 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz Features Gain: 21 dB P1dB Output Power: +20 dBm Wideband Performance: 17.5 to 40 GHz Supply Voltage: +5V @ 295 mA Small Chip Size: 2.1 x 0.92 x 0.1 mm Typical Applications This HMC-AUH256 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP • VSAT • SATCOM Functional Diagram General Description The HMC-AUH256 is a GaAs MMIC HEMT four stage Driver Amplifier which covers the frequency range of 17.5 to 40 GHz. The chip can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (1.93 mm2) size. The HMC-AUH256 offers 21 dB of gain and +20 dBm output power at 1 dB compression from a bias supply of +5V @ 295 mA. The HMC-AUH256 may also be used as a frequency doubler. Detail bias condition to achieve doubler operation. Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 295mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output Power for 1 dB Compression Saturated Output Power Output IP3 Supply Current (Idd1 + Idd2 + Idd3 + Idd4) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1 = Vgg2 = Vgg3 = Vgg4 between -1V to +0.3V (Typ. -0.3V) 20 - 30 GHz 30 - 45 GHz Min. Typ. 17.5 - 41 21 8 15 8 20 23 27 295 Max. Units GHz dB dB dB dB dBm dBm dBm mA Electrical Specifi cations [1], TA = +25°C 0-6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH256 v00.0907 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz Linear Gain vs. Frequency Fixtured Pout vs. Frequency IP3 @ Pout= 18 dBm/tone P1dB Input Return Loss vs. Frequency Output Return Loss vs. Frequency Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd1= Vd2= Vd3= Vd4= 5V, Id1= 50mA, Id2= 50mA, Id3= 75mA, Id4= 120mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP -7 P3dB HMC-AUH256 v00.0907 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz x2 Pout vs. Frequency (vs Pad) Fixtured Pout vs. Frequency @ Pin= 8 dBm AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP Fixtured Pout vs. Frequency @ Pin= 10 dBm Absolute Maximum Ratings Drain Bias Voltage RF Input Power Drain Bias Current (Idd1, Idd2) Drain Bias Current (Idd3) Drain Bias Current (Idd4) Gate Bias Voltage Channel Temperature Thermal Resistance (channel to die bottom) Storage Temperature +5.5 Vdc 15 dBm 62 mA 93 mA 150 mA -1 to +0.3 Vdc 180 °C 77.5 °C/W -65 to +150 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Note: Multiplier Performance Characteristics (Typical Performance at 25°C) Vd1= 2V, Vd2= Vd3= Vd4= 5V, Id1= 5mA, Id2+Id3+Id4= 245mA 0-8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH256 v00.0907 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP -9