HMC-AUH318_11

HMC-AUH318 v06.0511 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Features Gain: 24 dB p1dB: +17.5 dBm supply Voltage: +4V 50 ohm matched input/output Die size: 2.65 x 1.60 x 0.05 mm Typical Applications This hmC-AUh318 is ideal for: • Short Haul / High Capacity Links • Wireless LAN Bridges • Military & Space • E-Band Communication Systems 3 Amplifiers - lineAr & power - Chip Functional Diagram General Description The hmC-AUh318 is a high dynamic range, three stage GaAs hemT mmiC medium power Amplifier which operates between 71 and 76 Ghz. The hmCAUh318 provides 24 dB of gain, and an output power of +17.5 dBm at 1 dB compression from a +4V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The hmC-AUh318 GaAs hemT mmiC medium power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes. Electrical Specifications[1], TA = +25° C, Vdd1 = Vdd2 = 4V, Idd1 = Idd2 = 80 mA [2] parameter frequency range Gain input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) supply Current (idd1+idd2) 21 min. Typ. 71 - 76 24 7 4 17.5 20 160 max. Units Ghz dB dB dB dBm dBm mA [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of idd1 = 80 mA and idd2 = 80 mA. products and product information are subject to change without notice. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-1 HMC-AUH318 v06.0511 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Fixtured Output Power vs. Frequency 21 Linear Gain vs. Frequency 26 25 24 GAIN (dB) 23 22 21 20 19 18 68 70 72 74 76 78 80 FREQUENCY (GHz) 20 POUT (dBm) P1dB PSat 19 3 74 75 18 17 16 70 71 72 73 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 0 -2 RETURN LOSS (dB) -4 -6 -8 -10 -12 -14 -5 RETURN LOSS (dB) -10 -15 -20 -25 68 70 72 74 76 78 80 FREQUENCY (GHz) 68 70 72 74 76 78 80 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-2 Amplifiers - lineAr & power - Chip HMC-AUH318 v06.0511 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Reliability Information Junction Temperature to maintain 1 million hour mTTf nominal Junction Temperature (T = 85 °C) Thermal resistance (Junction to Die Bottom) operating Temperature Drain Bias Current (idd1) 180 °C 156.5 °C 111.7 °C/w -55 to +85 °C 100 mA 100 mA Absolute Maximum Ratings nominal 4.0V supply to GnD Gate Bias Voltage 0.0V to +4.5V -0.8V to +0.3V +3 dBm -65 to +150 °C 260 °C 3 Amplifiers - lineAr & power - Chip rf input power (Vdd = +4.0V) storage Temperature Max Peak Reflow Temperature Drain Bias Current (idd2) eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions Outline Drawing Die Packaging Information [1] standard GP-1 (Gel Pack) Alternate [2] noTes: 1. All Dimensions Are in inChes [mm]. 2. BACKsiDe meTAlliZATion: GolD. 3. BACKsiDe meTAl is GroUnD. 4. BonD pAD meTAlliZATion: GolD. 5. ConneCTion noT reQUireD for UnlABeleD BonD pADs. 6. oVerAll Die siZe ±.002” 7. Die ThiCKness is 0.002” [0.050 mm] 8 TYpiCAl BonD pAD is 0.004” [0.100 mm] sQUAre Unless noTeD [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3-3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-AUH318 v06.0511 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Pad Descriptions pad number 1 function rfin Description This pad is AC coupled and matched to 50 ohms. Gate control for amplifier. please follow “mmiC Amplifier Biasing procedure” application note. see assembly for required external components. This pad is AC coupled and matched to 50 ohms. interface schematic 2, 3 Vgg1, Vgg2 3 Amplifiers - lineAr & power - Chip 3-4 4 rfoUT 5, 6 Vdd1, Vdd2 power supply Voltage for the amplifier. see assembly for required external components. Die Bottom GnD Die bottom must be connected to rf/DC ground. Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-AUH318 v06.0511 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Assembly Diagram 3 Amplifiers - lineAr & power - Chip 3-5 note 1: Bypass caps should be 100 pf (approximately) single-layer placed no farther than 30 mils from the amplifier. note 2: Best performance is obtained by minimizing the length of the ribbon, 1.5 by 0.5 mil, on the input and output. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-AUH318 v06.0511 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 50 Ohm Microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076 mm to 0.152 mm (3 to 6 mils). 0.05mm (0.002”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) 3 Amplifiers - lineAr & power - Chip 3-6 RF Ground Plane Handling Precautions Follow these precautions to avoid permanent damage. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Storage: All bare die are placed in either waffle or Gel based esD protecFigure 1. tive containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding rf bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com