HMC-AUH320

HMC-AUH320 v03.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Typical Applications This HMC-AUH320 is ideal for: • Short Haul / High Capacity Links Features Gain: 16 dB @ 74 GHz P1dB: +15 dBm Supply Voltage: +4V 50 Ohm Matched Input/Output Die Size: 2.20 x 0.87 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Wireless LAN Bridges • Automotive Radar • Military & Space • E-Band Communication Systems Functional Diagram General Description The HMC-AUH320 is a high dynamic range, four stage GaAs HEMT MMIC Medium Power Amplifier which operates between 71 and 86 GHz. The HMC-AUH320 provides 16 dB of gain at 74 GHz, and an output power of +15 dBm at 1 dB compression from a +4V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-AUH320 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 130 mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1dB Compression (P1dB) Saturated Output Power (Psat) Supply Current (Idd1+Idd2) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -0.8V to +0.3V (typ -0.1V) to achieve Idd1 = 40 mA, Idd 2 = 9 0 mA 10 Min. Typ. 71 - 86 16 4 6 15 16 130 Max. Units GHz dB dB dB dBm dBm mA 3 - 238 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH320 v03.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Linear Gain vs. Frequency 24 Fixtured Output Power vs. Frequency 22 20 POUT (dBm) GAIN (dB) 18 3 P1dB P3dB Psat 16 14 12 10 8 70 72 74 76 78 80 82 84 86 88 FREQUENCY (GHz) 6 70 74 78 82 86 90 FREQUENCY (GHz) Input Return Loss vs. Frequency -2 Output Return Loss vs. Frequency -2 OUTPUT RETURN LOSS (dB) -6 -6 -10 -10 -14 -14 -18 70 72 74 76 78 80 82 84 86 88 FREQUENCY (GHz) -18 70 72 74 76 78 80 82 84 86 88 FREQUENCY (GHz) Note: Measured Performance Characteristics (Typical Performance at 25°C) Vdd1 = Vdd2 = 4V and Idd1 = 40mA, Idd2 = 90mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 239 LINEAR & POWER AMPLIFIERS - CHIP INPUT RETURN LOSS (dB) HMC-AUH320 v03.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage +4.5 Vdc -0.8 to +0.3 Vdc 92.1 °C/W 180 °C -65 °C to +150 °C -55 °C to +85 °C 50 mA 100 mA 3 LINEAR & POWER AMPLIFIERS - CHIP Thermal Resistance (Channel to die bottom) Channel Temperature Storage Temperature Operating Temperature Drain Bias Current (Idd1) Drain Bias Current (Idd2) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 240 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH320 v03.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 3 2, 3 Vdd1, Vdd2 Power Supply Voltage for the amplifier. See assembly for required external components. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. 5 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 241 LINEAR & POWER AMPLIFIERS - CHIP HMC-AUH320 v03.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of