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HMC-SDD112

HMC-SDD112

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC-SDD112 - GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
HMC-SDD112 数据手册
HMC-SDD112 v02.0309 GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz Typical Applications This HMC-SDD112 is ideal for: • FCC E-Band Communication Systems • Short-Haul / High Capacity Radios • Automotive Radar Features Low Insertion Loss: 2 dB High Isolation: 30 dB DC Blocked RF I/Os Integrated DC Bias Circuitry Die Size: 2.01 x 0.975 x 0.1 mm 4 SWITCHES - CHIP • Test & Measurement Equipment • SATCOM • Sensors Functional Diagram General Description The HMC-SDD112 is a monolithic, GaAs PIN diode based Single Pole Double Throw (SPDT) MMIC Switch which exhibits low insertion loss and high isolation. This all-shunt MMIC SPDT features on-chip DC blocks and DC bias voltage decoupling circuitry. All bond pads and the die backside are Ti/Au metallized and the PIN diode devices are fully passivated for reliable operation. The HMC-SDD112 GaAs PIN SPDT is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations*, TA = +25 °C, with -5/+5V Control, 50 Ohm System Parameter Frequency Range Insertion Loss Isolation Return Loss ON State Current (+5 V) ON State Current (-5 V) OFF State * Unless otherwise indicated, all measurements are from probed die 25 Min. Typ. 55 - 86 2 30 12 22 -63 3 Max. Units GHz dB dB dB mA nA 4 - 44 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-SDD112 v02.0309 GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz “On” Insertion Loss vs. Freq. CTLA= -5V, CTLB= 5V for RFOUT1 to be ON 0 “Off” Isolation vs. Freq. CTLA= +5V, CTLB= -5V for RFOUT1 to be OFF 0 -5 INSERTION LOSS (dB) -1 ISOLATION (dB) -10 -15 -20 -25 -30 -35 -40 -2 -3 4 55 60 65 70 75 80 85 90 FREQUENCY (GHz) -4 -5 55 60 65 70 75 80 85 90 FREQUENCY (GHz) -45 “On” Input Return Loss vs. Freq. CTLA= -5V, CTLB= 5V for RFOUT1 to be ON 0 “On” Output Return Loss vs. Freq. CTLA= -5V, CTLB= 5V for RFOUT1 to be ON 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 -5 -10 -15 -15 -20 -20 -25 55 60 65 70 75 80 85 90 FREQUENCY (GHz) -25 55 60 65 70 75 80 85 90 FREQUENCY (GHz) Note 1: Measured Performance Characteristics (Typical Performance at 25°C) Test data is taken with probes on RFIN and RFOUT1 with RFOUT2 left open. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 45 SWITCHES - CHIP HMC-SDD112 v02.0309 GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz Absolute Maximum Ratings Bias Voltage Range Storage Temperature Operating Temperature Bias Current (ON State) -5.5 to 5.5 Vdc -65 to +150 °C -55 to +85 °C 30 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 4 SWITCHES - CHIP Control Voltages State Low High Bias Condition -5 V @ 63 nA typical +5 V @ 22 mA typical Truth Table Control Input CTLA Low (-5V) High (+5V) CTLB High (+5V) Low (-5V) Signal Path State RFIN to RFOUT1 On Off RFIN to RFOUT2 Off On Outline Drawing Die Packaging Information [1] Standard GP-5 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 4 - 46 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-SDD112 v02.0309 GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz Pad Descriptions Pad Number 1 Function RFOUT1 Pin Description This pin is DC blocked and matched to 50 Ohms. Interface Schematic 2,3 CTLA, CTLB See Truth Table and Control Voltage Table 4 RFOUT2 This pin is DC blocked and matched to 50 Ohms. 4 SWITCHES - CHIP 4 - 47 5 RFIN This pin is DC blocked and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-SDD112 v02.0309 GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz Assembly Diagram 4 SWITCHES - CHIP Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the switch. Note 2: Best performance obtained from use of
HMC-SDD112 价格&库存

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