HMC-VVD104_09

HMC-VVD104 v01.0209 GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 70 - 86 GHz Features Low Insertion Loss: 2 dB Wide Dynamic Range: 14 dB Balanced Topology Flexible Biasing Single Control Voltage: -5V to +5V Die Size: 1.99 x 1.845 x 0.1 mm 1 ATTENUATORS - ANALOG - CHIP Typical Applications This HMC-VVD104 is ideal for: • E-Band Communication Systems • Short Haul / High Capacity Radios • Automotive Radar • Test Equipment • SATCOM and Sensors Functional Diagram General Description The HMC-VVD104 is a monolithic GaAs PIN diode based Voltage Variable Attenuator (VVA) which exhibits low insertion loss, high IP3, and wide dynamic range. The balanced topology delivers excellent return loss while the single control voltage can be applied to either side of the die. All bond pads and the die backside are Ti/Au metallized, and the PIN diode devices are fully passivated for reliable operation. This wideband VVA MMIC is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25 °C, 50 Ohm System Parameter Frequency Range Insertion Loss Attenuation Range Input Return Loss Output Return Loss *Unless otherwise indicated, all measurements are from probed die Min. Typ. 70 - 86 2 14 14 12 3 Max. Units GHz dB dB dB dB 1 - 34 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-VVD104 v01.0209 GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 70 - 86 GHz Attenuation vs. Frequency 0 -3 DYNAMIC RANGE (dB) ATTENUATION (dB) 12 -6 -9 -12 -15 -18 70 74 78 82 86 90 FREQUENCY (GHz) 0 70 74 78 82 86 90 FREQUENCY (GHz) -5V 5V Dynamic Range vs. Frequency 16 1 ATTENUATORS - ANALOG - CHIP 1 - 35 8 4 Input Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 70 74 78 82 86 90 FREQUENCY (GHz) -5V 5V Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 70 74 78 82 86 90 FREQUENCY (GHz) -5V 5V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-VVD104 v01.0209 GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 70 - 86 GHz 1 ATTENUATORS - ANALOG - CHIP Absolute Maximum Ratings Control Voltage Range (Vdd) Storage Temperature Operating Temperature Bias Current (Idd) -6V to +6V Vdc -65 to +150 °C -55 to +85 °C 30 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-1 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 36 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-VVD104 v01.0209 GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 70 - 86 GHz Pad Descriptions Pad Number 1 Function RFIN Pad Description This pin is DC blocked and matched to 50 Ohms. Interface Schematic 1 Vdd Control Input. 2, 4 3 RFOUT This pin is DC blocked and matched to 50 Ohms. Die bottom must be connected to RF/DC ground Die Bottom GND For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 37 ATTENUATORS - ANALOG - CHIP HMC-VVD104 v01.0209 GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 70 - 86 GHz 1 ATTENUATORS - ANALOG - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of