HMC-XDB112
v00.0907
GaAs MMIC PASSIVE FREQUENCY DOUBLER, 10 - 15 GHz INPUT
Features
Conversion Loss: 13 dB Passive: No DC Bias Required Input Drive: +13 dBm High Fo Isolation: 30 dB Die Size: 2.2 x 0.65 x 0.1 mm
Typical Applications
2
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
This HMC-XDB112 is ideal for: • Point-to-Point Radios • VSAT • Test Instrumentation • Military & Space • Clock Generation
Functional Diagram
General Description
The HMC-XDB112 is a monolithic Passive Frequency Doubler which utilizes GaAs Heterojunction Bipolar Transistor (HBT) technology, and is targeted to high volume applications where frequency doubling of a lower frequency is more economical than directly generating a higher frequency. All bond pads and the die backside are Ti/Au metallized and the HBT devices are fully passivated for reliable operation. The HMC-XDB112 Passive Doubler MMIC is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Electrical Specifi cations*, TA = 25 °C, Pin = +13 dBm
Parameter Frequency Range Input Frequency Range Output Conversion Loss Fo Isolation with respect to output *Unless otherwise indicated, all measurements are from probed die Min. Typ. 10 - 15 20 - 30 13 30 Max. Units GHz GHz dB dB
2 - 68
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-XDB112
v00.0907
GaAs MMIC PASSIVE FREQUENCY DOUBLER, 10 - 15 GHz INPUT
Conversion Loss
0 -2 CONVERSION LOSS (dB) OUTPUT POWER (dBm) -4 -6 -8 -10 -12 -14 -16 -18 -20 10 11 12 13 14 15 FREQUENCY (GHz)
Output Power
5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 10 11 12 13 14 15 INPUT FREQUENCY (GHz)
2
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
2 - 69
Fin 2xFin
Outline Drawing
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard WP-4 (Waffle Pack) Alternate [2]
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002”
[1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-XDB112
v00.0907
GaAs MMIC PASSIVE FREQUENCY DOUBLER, 10 - 15 GHz INPUT
Pad Descriptions
2
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
Pad Number 1
Function RFIN
Description This pad is AC coupled and matched to 50 Ohms.
Interface Schematic
2
RFOUT
This pad is AC coupled and matched to 50 Ohms.
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
Assembly Diagram
Note 1: Best performance obtained from use of
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