HMC-XDH158_09

HMC-XDH158 v01.1207 GaAs MMIC X4 ACTIVE FREQUENCY MULTIPLIER, 54 - 64 GHz OUTPUT Features Output Power: -6 dBm Wide Input Power Range: 0 to +5 dBm High Fo Isolation: 30 dBc Low Conversion Loss: 8 dB Die Size: 1.8 x 0.8 x 0.1 mm Typical Applications 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP This HMC-XDH158 is ideal for: • Short-Haul / High Capacity Radios • Point-to-Point Radio • Test & Measurement Equipment • SATCOM • Military and Secure Communications Functional Diagram General Description The HMC-XDH158 is a monolithic X4 Active Frequency Multiplier which utilizes GaAs High Electron Mobility Transistor (HEMT) technology and exhibits low conversion loss and high Fo isolation. This wideband multiplier is ideal for use in LO multiplier chains for high capacity and SATCOM radios yielding reduced parts count vs. traditional approaches. All bond pads and the die backside are Ti/Au metallized and the HEMT devices are fully passivated for reliable operation. The HMC-XDH158 X4 Active Frequency Multiplier MMIC is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations* TA = 25 °C, Vdd1 = 1.5V, Vdd2 = 4V, Vgg1 = -0.2V, Vgg2 = -0.3V, +2 dBm Drive Level Parameter Frequency Range Input Frequency Range Output Output Power Conversion Loss Fo Isolation with respect to output 2Fo Isolation with respect to output Supply Current Idd1 Idd2 Min. Typ. 14 - 16 56 - 64 -6 8 36 54 14 115 14 Max. Units GHz GHz dBm dB dB dB mA mA *Unless otherwise indicated, all measurements are from probed die 2 - 72 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-XDH158 v01.1207 GaAs MMIC X4 ACTIVE FREQUENCY MULTIPLIER, 54 - 64 GHz OUTPUT x4 Conversion Loss vs. Frequency -5 -6 CONVERSION LOSS (dB) OUTPUT POWER (dBm) -7 -8 -9 -10 -11 -12 -13 -14 -15 14 14.5 15 FREQUENCY (GHz) 15.5 16 -60 14 14.5 15 FREQUENCY (GHz) 15.5 16 -10 -20 -30 -40 -50 4F 3F F 2F Output Power vs. Frequency 0 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP 2 - 73 Absolute Maximum Ratings RF Input Level Supply Voltage (Vdd1, Vdd2) Gate Voltage (Vgg1, Vgg2) Channel Temperature Storage Temperature Operating Temperature +7 dBm +5 Vdc -1 to 0.3 Vdc 180 °C -65 to +150 °C -55 to +85 °C Die Packaging Information Standard WP-8 (Waffle Pack) [1] Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” Outline Drawing For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-XDH158 v01.1207 GaAs MMIC X4 ACTIVE FREQUENCY MULTIPLIER, 54 - 64 GHz OUTPUT Pad Descriptions 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 4, 6 Vdd1, Vdd2 Power Supply for amplifier. See Assembly Drawing for required external components. 3 RFOUT This pad is AC coupled and matched to 50 Ohms. Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” Application Note. See Assembly Drawing for required external components. Die bottom must be connected to RF/DC ground. 2,5 Vgg1, Vgg2 Die Bottom GND Assembly Diagram 2 - 74 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-XDH158 v01.1207 GaAs MMIC X4 ACTIVE FREQUENCY MULTIPLIER, 54 - 64 GHz OUTPUT Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP 2 - 75 0.076mm (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com