HMC-XTB106
v01.1207
Typical Applications
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FREQUENCY MULTIPLIERS - PASSIVE - CHIP
This HMC-XTB106 is ideal for:
• FCC E-Band Communication Systems • Short-Haul / High Capacity Radios • Automotive Radar
• Test & Measurement Equipment
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Features
Conversion Loss: 19 dB Input Drive: +13 dBm Passive: No DC Bias Required Die Size: 1.1 x 1.45 x 0.1 mm
GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT
Functional Diagram
w r Ne o ed f d men om General Description Rec t The HMC-XTB106 is a monolithic X3 Passive FreNo
quency Multiplier which utilizes GaAs Shottky Diode technology, and exhibits low conversion loss and high Fo isolation. This wideband X3 multiplier requires no DC power, and is targeted to high volume applications where frequency X3 of a lower frequency is more economical than directly generating a higher frequency. All bond pads and the die backside are Ti/Au metallized and the Shottky diode devices are fully passivated for reliable operation. The HMCXTB106 Passive X3 MMIC is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
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Electrical Specifi cations*, TA = 25 °C, Pin = +13 dBm
Parameter Frequency Range Input Frequency Range Output Conversion Loss *Unless otherwise indicated, all measurements are from probed die Min. Typ. 24 - 30 72 - 90 19 Max. Units GHz GHz dB
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-XTB106
v01.1207
x3 Conversion Loss
-17 X3 CONVERSION LOSS (dB) -18 -19 -20 -21 -22 -23 -24 24
-4 -5 -6 -7 -8
25
26
27
28
INPUT FREQUENCY (GHz)
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29 30 31 24 25 26
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28 29
27
30
31
INPUT FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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FREQUENCY MULTIPLIERS - PASSIVE - CHIP
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Output Power
0 -1 -2 -3 X3 OUPUT POWER (dBm)
GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT
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HMC-XTB106
v01.1207
Absolute Maximum Ratings
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FREQUENCY MULTIPLIERS - PASSIVE - CHIP
RF Input Level
Storage Temperature
Operating Temperature
Outline Drawing
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+18 dBm -65 to +150 °C -55 to +85 °C
GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
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Die Packaging Information [1]
Standard WP - 3 Alternate [2]
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002”
[1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-XTB106
v01.1207
Pad Descriptions
Pad Number 1
2
RFOUT
This pad is DC coupled and matched to 50 Ohms.
Die Bottom
GND
w r Ne o ed f d men om Rec Not
Die bottom must be connected to RF/DC ground.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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FREQUENCY MULTIPLIERS - PASSIVE - CHIP
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Function RFIN Description This pad is DC coupled and matched to 50 Ohms.
GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT
Interface Schematic
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HMC-XTB106
v01.1207
Assembly Diagram
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FREQUENCY MULTIPLIERS - PASSIVE - CHIP
ED U IN NT T O SC DUC DI RO P
w r Ne o ed f d men om Rec Not s sign De
GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-XTB106
v01.1207
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
w r Ne o ed f d Microstrip substrates should be placed as close to the die as possible in men spacing is order to minimize bond wire length. Typical die-to-substrate om 0.076mm to 0.152 mm (3 to 6 mils). Rec Not Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD
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Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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FREQUENCY MULTIPLIERS - PASSIVE - CHIP
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
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GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT
2
