HMC-XTB110_10

HMC-XTB110 v00.1008 GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT Features conversion Loss: 19 dB Input Drive: +13 dBm Passive: no Dc Bias Required Die Size: 1.1 x 1.4 x 0.1 mm Typical Applications 2 FREQUEncy MULTIPLIERS - PaSSIvE - cHIP This HMc-XTB110 is ideal for: • Fcc E-Band communication Systems • Short-Haul / High capacity Radios • automotive Radar • Test & Measurement Equipment Functional Diagram General Description The HMc-XTB110 is a monolithic X3 Passive Frequency Multiplier which utilizes Gaas Shottky Diode technology, and exhibits low conversion loss and high Fo isolation. This wideband X3 multiplier requires no Dc power, and is targeted to high volume applications where frequency X3 of a lower frequency is more economical than directly generating a higher frequency. all bond pads and the die backside are Ti/au metallized and the Shottky diode devices are fully passivated for reliable operation. The HMc-XTB110 Passive X3 MMIc is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for McM and hybrid microcircuit applications. all data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifications*, TA = 25 °C, Pin = +13 dBm Parameter Frequency Range Input Frequency Range Output conversion Loss *Unless otherwise indicated, all measurements are from probed die Min. Typ. 24 - 30 72 - 90 19 Max. Units GHz GHz dB 2-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-XTB110 v00.1008 GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT Output Power 0 -1 X3 OUPUT POWER (dBm) -2 -3 x3 Conversion Loss -17 X3 CONVERSION LOSS (dB) -18 -19 -20 -21 -22 -23 -24 24 25 26 27 28 29 30 31 INPUT FREQUENCY (GHz) 2 FREQUEncy MULTIPLIERS - PaSSIvE - cHIP 2-2 -4 -5 -6 -7 -8 -9 24 25 26 27 28 29 30 31 INPUT FREQUENCY (GHz) Absolute Maximum Ratings RF Input Level Storage Temperature Operating Temperature +18 dBm -65 to +150 °c -55 to +85 °c ELEcTROSTaTIc SEnSITIvE DEvIcE OBSERvE HanDLInG PREcaUTIOnS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-XTB110 v00.1008 GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT Pad Descriptions 2 FREQUEncy MULTIPLIERS - PaSSIvE - cHIP Pad number 1 2 Function RFIn RFOUT Description This pad is Dc coupled and matched to 50 Ohms. This pad is Dc coupled and matched to 50 Ohms. Die bottom must be connected to RF/Dc ground. Interface Schematic Die Bottom GnD Outline Drawing Die Packaging Information Standard WP-2 (Waffle Pack) [1] nOTES: 1. aLL DIMEnSIOnS aRE In IncHES [MM]. 2. BacKSIDE METaLLIZaTIOn: GOLD. 3. BacKSIDE METaL IS GROUnD. 4. BOnD PaD METaLLIZaTIOn: GOLD. 5. cOnnEcTIOn nOT REQUIRED FOR UnLaBELED BOnD PaDS. 6. OvERaLL DIE SIZE ±.002” alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 2-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC-XTB110 v00.1008 GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMc general Handling, Mounting, Bonding note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 2 FREQUEncy MULTIPLIERS - PaSSIvE - cHIP 2-4 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: all bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO nOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with auSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 °c and a tool temperature of 265 °c. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °c. DO nOT expose the chip to a temperature greater than 320 °c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. Epoxy Die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. Dc bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 °c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com