HMC1022

HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Features high p1dB output power: 22 dBm high psat output power: 24 dBm high Gain: 12 dB high output ip3: 32 dBm supply Voltage: +10 V @ 150 mA 50 ohm matched input/output Die size: 2.82 x 1.50 x 0.1 mm Typical Applications The hmC1022 is ideal for: • Test Instrumentation • Microwave Radio & VSAT • Military & Space • Telecom Infrastructure 3 Amplifiers - lineAr & power - Chip • Fiber Optics Functional Diagram General Description The hmC1022 is a GaAs phemT mmiC Distributed power Amplifier which operates between DC and 48 Ghz. The amplifier provides 12 dB of gain, 32 dBm output ip3 and +22 dBm of output power at 1 dB gain compression while requiring 150 mA from a +10 V supply. The hmC1022 exhibits a slightly positive gain slope from 10 to 35 Ghz, making it ideal for ew, eCm, radar and test equipment applications. The hmC1022 amplifier i/os are internally matched to 50 ohms facilitating integration into mutli-Chip-modules (mCms). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +4.5 V, Idd = 150 mA [1] parameter frequency range Gain Gain flatness Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) noise figure supply Current (idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 20 9.5 min. Typ. DC - 16 11.5 ±0.5 0.012 18 28 22 24.5 35 4 150 19.5 9.5 max. min. Typ. 16 - 36 12 ±0.3 0.018 16 22 21.5 23.5 32 5.5 150 16 9.5 max. min. Typ. 36 - 48 11.5 ±1.1 0.041 15 18 19 21 29 8 150 max. Units Ghz dB dB dB/ °C dB dB dBm dBm dBm dB mA [1] Adjust Vgg1 between -2 to 0 V to achieve idd = 150 mA typical. 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Gain vs. Temperature 18 16 Gain & Return Loss 20 10 RESPONSE (dB) 0 -10 -20 -30 -40 0 5 10 15 20 25 30 35 40 45 50 55 FREQUENCY (GHz) S21 S11 S22 14 GAIN (dB) 12 10 8 6 0 5 10 15 +25C +85C -55C 3 25 30 35 40 45 50 20 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -55C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -20 RETURN LOSS (dB) -10 -10 +25C +85C -55C -20 -30 -30 -40 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) -40 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) Gain vs. Vdd [1] 18 16 14 GAIN (dB) 12 10 8 6 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) Low Frequency Gain & Return Loss 20 10 RESPONSE (dB) +8V +10V +11V 0 -10 -20 -30 -40 -50 -60 0.0001 S21 S11 S22 0.001 0.01 0.1 1 10 FREQUENCY (GHz) [1] for Vdd= +8V, Vgg2=+3.5V; for Vdd= +10V, Vgg2= +4.5V; for Vdd= 11V, Vgg2= +5.5V. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-2 Amplifiers - lineAr & power - Chip HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz P1dB vs. Supply Voltage [1] 26 24 22 20 18 +8V +10V +11V P1dB vs. Temperature 26 24 P1dB (dBm) 20 18 16 14 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) +25C +85C -55C Amplifiers - lineAr & power - Chip P1dB (dBm) 3 22 16 14 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) Psat vs. Temperature 28 26 24 22 20 18 16 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) +25C +85C -55C Psat vs. Supply Voltage [1] 28 26 24 22 20 18 16 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) +8V +10V +11V Psat (dBm) P1dB vs. Supply Current [2] 26 24 22 P1dB (dBm) 20 18 16 14 12 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) 100 mA 150 mA Psat vs. Supply Current [2] 28 26 24 22 20 18 16 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) 100 mA 150 mA [1] for Vdd= +8V, Vgg2=+3.5V; for Vdd= +10V, Vgg2= +4.5V; forVdd= 11V Vgg2= +5.5V. [2] Vdd= +10V, Vgg2=+3.5V. 3-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Psat (dBm) Psat (dBm) HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Output IP3 vs. Supply Voltage @ Pout = 14 dBm / Tone [1] 38 36 34 Output IP3 vs. Temperature @ Pout = 14 dBm / Tone 38 36 34 IP3 (dBm) 30 28 26 24 22 0 4 8 12 16 20 24 28 32 36 40 44 48 +25C +85C -55C IP3 (dBm) 32 32 30 28 26 24 22 0 4 8 12 16 20 24 28 32 36 40 44 48 +8V +10V +11V 3 Amplifiers - lineAr & power - Chip 3-4 FREQUENCY (GHz) FREQUENCY (GHz) Output IM3 @ Vdd = +8V [1] 60 50 40 IM3 (dBc) 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 Pout/TONE (dBm) 4 GHz 10 GHz 16 GHz 22 GHz 28 GHz 34 GHz 40 GHz 44 GHz Output IM3 @ Vdd = +10V [1] 60 50 40 IM3 (dBc) 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 Pout/TONE (dBm) 4 GHz 10 GHz 16 GHz 22 GHz 28 GHz 34 GHz 40 GHz 44 GHz Output IM3 @ Vdd = +11V [1] 60 50 40 IM3 (dBc) 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 Pout/TONE (dBm) 4 GHz 10 GHz 16 GHz 22 GHz 28 GHz 34 GHz 40 GHz 44 GHz Noise Figure vs. Temperature 12 10 NOISE FIGURE(dB) 8 6 4 2 0 0 4 8 12 16 20 24 28 32 36 40 44 48 FREQUENCY (GHz) +25C +85C -55C [1] for Vdd= +8V, Vgg2=+3.5V; for Vdd= +10V, Vgg2= +4.5V; for Vdd= 11V Vgg2= +5.5V. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Power Compression @ 24 GHz 32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 Pout Gain PAE Reverse Isolation vs. Temperature 0 -10 +25C +85C -55C ISOLATION (dB) 3 Amplifiers - lineAr & power - Chip -20 -30 -40 -50 -60 -70 -80 0 5 10 15 20 25 30 35 40 45 50 -4 -1 2 5 8 11 14 17 FREQUENCY (GHz) INPUT POWER (dBm) Gain & Power vs. Supply Current @ 24 GHz 30 Gain & Power vs. Supply Voltage @ 24 GHz 30 Gain (dB), P1dB (dBm), Psat (dBm) 25 Gain (dB), P1dB (dBm), Psat (dBm) 25 20 Gain P1dB Psat 20 Gain P1dB Psat 15 15 10 10 5 5 0 100 110 120 130 140 150 0 8 9 10 11 Idd (mA) Vdd (V) Power Dissipation 2 POWER DISSIPATION (W) 1.5 1 4 GHz 10 GHz 20 GHz 30 GHz 40 GHz 46 GHz 0.5 0 0 3 6 9 12 15 INPUT POWER (dBm) 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Second Harmonics vs. Vdd @ Pout = 10 dBm, Idd = 150 mA [1] 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 +8V +10V +11V Second Harmonics vs. Temperature @ Pout = 10 dBm, Vdd = 10V & Vgg = 4.5V, 150 mA 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) +25C +85C -55C 3 20 24 0 4 8 12 16 FREQUENCY(GHz) Second Harmonics vs. Pout Vdd = 10V & Vgg = 4.5V & Idd = 150 mA 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) +4 dBm +6 dBm +8 dBm +10 dBm +12 dBm +14 dBm +16 dBm +18 dBm Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) 12V -3 to 0 Vdc for Vdd = 12V, Vgg2 = 5.5V idd >125mA Gate Bias Voltage (Vgg2) for Vdd between 8.5V to 11V, Vgg2 = (Vdd - 6.5V) to 5.5V for Vdd < 8.5V, Vgg2 must remain > 2V rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 °C) (derate 27 mw/°C above 85 °C) Thermal resistance (channel to die bottom) 20 dBm 150 °C 1.76 w 37 °C/w output power into Vswr >7:1 storage Temperature operating Temperature 24 dBm -65 to 150 °C -55 to 85 °C eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions Typical Supply Current vs. Vdd Vdd (V) +8 +10 +11 idd (mA) 150 150 150 [1] for Vdd= +8V, Vgg=+3.5V; for Vdd= +10V, Vgg= +4.5V; for Vdd= 11V Vgg= +5.5V. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-6 Amplifiers - lineAr & power - Chip HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Outline Drawing 3 Amplifiers - lineAr & power - Chip Die Packaging Information standard Gp-1 (Gel pack) [1] noTes: 1. All Dimensions in inChes [millimeTers] 2. Die ThiCKness is 0.004 (0.100) 3. TYpiCAl BonD pAD is 0.004 (0.100) sQUAre 4. BonD pAD meTAliZATion: GolD 5. BACKsiDe meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD 7. no ConneCTion reQUireD for UnlABeleD BonD pADs 8. oVerAll Die siZe is ±.002 Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Pad Descriptions pad number function Description interface schematic 1 rfin This pad is DC coupled and matched to 50 ohms. Blocking capacitor is required. 3 Amplifiers - lineAr & power - Chip 3-8 2 VGG2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. for nominal operation +4.5V should be applied to Vgg2. low frequency termination. Attach bypass capacitor per application circuit herein. low frequency termination. Attach bypass capacitor per application circuit herein. rf output for amplifier. Connect DC bias (Vdd) network to provide drain current (idd). see application circuit herein. 4, 7 3 5 ACG2, ACG4 ACG1 rfoUT & VDD 6 ACG3 low frequency termination. Attach bypass capacitor per application circuit herein. 8 VGG1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. please follow “mmiC Amplifier Biasing procedure” application note. Die Bottom GnD Die bottom must be connected to rf/DC ground. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Assembly Diagram 3 Amplifiers - lineAr & power - Chip Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA 3-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 Amplifiers - lineAr & power - Chip 3 - 10 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. follow esD precautions to protect against esD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding rf bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com