HMC1030LP5E

HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Features • crest Factor (Peak-to-Average Power ratio) Measurement • envelope-to-Average Power ratio Measurement • Dual channel and channel difference output ports • excellent channel Matching and channel Isolation • supports controller Mode • ± 1 dB Detection Accuracy to 3.9 GHz • Input Dynamic range -55 dBm to +15 dBm • +5V operation from -40° c to +85° c • excellent temperature stability • Integrated temperature sensor • Power-Down Mode • 32 Lead 5x5mm sMt Package: 25mm² 11 Power Detectors - sMt • rF signal wave shape & crest Factor Independent Typical Applications • Log -> Root - Mean - Square (RMS) conversion • Transmitter Power Control • Receiver Automatic Gain Control • Antenna VSWR Monitor • Received Signal Strength Indication (RSSI) • Transmitter Signal Strength Indication (TSSI) • Dual Channel wireless infrastructure radio Functional Diagram RMS & Envelope Response to WCDMA 4 Carrier with -20dBm RF Input @ 0.9 GHz 2.17 1.86 1.55 VET, RMS (V) 80 ETOUT RMSOUT 60 40 20 0 -20 -40 -60 RF Input RF Input (mV) 1.24 0.93 0.62 0.31 0 -0.31 0 200 400 600 800 Time (ns) -80 1000 11 - 1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz General Description the HMc1030LP5e is a dual-channel rMs power detector designed for high accuracy rF power signal measurement and control applications over the 0.1 to 3.9 GHz frequency range. The device can be used with input signals having rMs values from -60 dBm to +10 dBm referenced to 50 ohm and large crest factors with no accuracy degradation. each rMs detection channel is fully specified for operation up to 3.9 GHz, over a wide dynamic range of 70 dB. the HMc1030LP5e operates from a single +5V supply and provides two linear-in-dB detection outputs at the rMsA and rMsB pins with scaled slopes of 37 mV/dB. the rMsA and rMsB channel outputs provide rMs detection performance in terms of dynamic range, logarithmic linearity and temperature stability similar to Hittite’s HMc1021LP4e rMs Detector. the rMsA and rMsB outputs provide a read of average input signal power, or true-rMs power. Frequency detection up to 3.9 GHz is possible, with excellent channel matching of less than 1 dB, over a wide range of input frequencies and with low temperature drift. the HMc1030LP5e also provides “channel difference” output ports via pins oUtP and oUtN, permitting measurements of the input signal power ratio between the two power detection channels. these outputs may be used in single-ended or differential configurations. An input voltage applied to the VLVL input pin is used to set the common mode voltage reference level for oUtP and oUtN. on the Hittite evaluation board, the VLVL pin is shorted to VreF2 output to provide a nominal bias voltage of 2.5V; but any external bias voltage may be used to set VLVL. the HMc1030LP5e features etA and etB pins which provide an accurate voltage output which is linearly proportional to the envelope amplitude of the rF input signal for modulation bandwidths up to 150 MHz. the high bandwidth envelope detection of the HMc1030LP5e makes it ideal for detecting broadband and high crest factor rF signals commonly used in cDMA2000, wcDMA, and Lte systems. Additionally, the instantaneous envelope output can be used to create fast, excessive rF power protection, PA linearization, and efficiency enhancing envelope tracking PA implementations. the HMc1030LP5e includes a buffered PtAt temperature sensor output with a temperature scaling factor of 2 mV/°c yielding a typical output voltage of 567 mV at 0°c. the HMc1030LP5e operates over the -40 to +85°c temperature range, and is available in a compact, 32-lead 5x5 mm leadless QFN package. 11 Power Detectors - sMt 11 - 2 Electrical Specifications I, TA = +25°C, VCCA = VCCB = VCCBS = 5V, Sci3 = Sci1 = 0V, Sci2= 5V, Unless Otherwise Noted Parameter Dynamic Range (± 1 dB measurement error) [1] Input Signal Frequency rMsA output rMsB output etA output etB output Channel Isolations Input Signal Frequency Input A to rMs B Isolation (PIN B = - 45 dBm, rMs B = rMsBINB ±1 dB) Input B to rMsA Isolation (PINA = - 45 dBm, rMsA = rMsAINA ±1 dB) Input A to rMs B Isolation (PIN B = - 40 dBm, rMs B = rMsBINB ±1 dB) Input B to rMsA Isolation (PINA= -40 dBm, rMsA=rMsAINA ±1 dB) Deviation vs Temperature: (over full temperature range -40°c to 85°c). Deviation is measured from reference, which is the same wcDMA input at 25 °c Channel Mismatch 100 > 55 > 55 900 > 55 > 55 1900 52 50 2200 49 46 2700 49 45 44 47 1 15 110 110 Max. Units dB ohm ohm 2.25 V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Electrical Specifications III (continued), TA = +25 °C, VCCA = VCCB = VCCBS = 5V, Sci3 = Sci1 = 0V, Sci2 = 5V, Unless Otherwise Noted Parameter ET [A, B] Outputs Modulation Bandwidth output Voltage range source/sink current compliance output slew rate (rise/fall) VSET [A,B] Outputs For control applications with nominal slope/intercept settings Measured with 0.9 GHz input rF signal at -18 dBm power 100 1 to 2.1 8 / 2.95 83.3 / 250 MHz V mA 10 V/sec 6 conditions Min. typ. Max. Units 11 Power Detectors - sMt Input Voltage range [1] Input resistance OUTP and OUTN Outputs output Voltage range open-loop output Voltage range source/sink current compliance 0.13 to 2.7 1 V kohm V V mA rL=1k ohm, cL=4.7pF [1] oUtP-FBKA and oUtN-FBKB disconnected for control applications Measured with 0.9 GHz input rF signal at -30 dBm power oUt[P,N]=FBK[A,B] 0 1 to 3.9 0.1 to Vcc-0.9 8 / 2.2 VLVL , Common Mode Reference Level for OUT[P,N] Voltage range Input resistance VREF2 , Voltage Reference Output output Voltage temperature sensitivity source/sink current compliance TEMP, Temperature Sensor Output output Voltage temperature sensitivity source/sink current compliance SCI1-3 Inputs, ENX Logic Input, Power Down Control Input High Voltage Input Low Voltage Input capacitance Power Supply supply Voltage supply current with no input power supply current with 0 dBm at one channel supply current with 0 dBm at both channels standby Mode supply current [1] For nominal slope/intercept setting, please see application section to change this range 120.6 mA nominal at -40°c; 159.5 mA nominal at 85°c 128 mA nominal at -40°c; 168.2 mA nominal at 85°c 4.5 5 143 151.7 160 13 5.5 V mA mA mA mA 0.5 0.7xVcc 0.3xVcc V V pF measured at 0°c 0.6 2.2 1.7 / 0.5 V mV/°c mA 2.43 0.15 5.5 / 2.6 V mV/°c mA 5 6 V kohm 11 - 5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz RMSA & Error vs. Pin @ 100 MHz [1] 3.2 2.8 2.4 RMSA (V) Ideal RMSA +25C RMSA +85C RMSA -40C RMSB & Error vs. Pin @ 100 MHz [1] 4 3 2 RMSB (V) 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C ERR +25C ERR +85C ERR -40C 4 3 2 1 0 -1 -2 -3 -4 10 ERROR (dB) 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) ERR +25C ERR +85C ERR -40C 1 0 -1 -2 -3 -4 10 RMSA & Error vs. Pin @ 900 MHz [1] 3.2 2.8 2.4 RMSA (V) ERR +25C ERR +85C ERR -40C RMSB & Error vs. Pin @ 900 MHz [1] 4 3 2 RMSB (V) 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C ERR +25C ERR +85C ERR - 40C 4 3 2 1 0 -1 -2 -3 -4 10 ERROR (dB) 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C 1 0 -1 -2 -3 -4 10 RMSA & Error vs. Pin @ 1900 MHz [1] 3.2 2.8 2.4 RMSA (V) ERR +25C ERR +85C ERR -40C RMSB & Error vs. Pin @ 1900 MHz [1] 4 3 2 RMSB (V) 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C ERR +25C ERR +85C ERR -40C 4 3 2 1 0 -1 -2 -3 -4 10 ERROR (dB) 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C 1 0 -1 -2 -3 -4 10 [1] wcDMA Input waveform F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 11 - 6 Power Detectors - sMt ERROR (dB) ERROR (dB) ERROR (dB) 11 HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz RMSA & Error vs. Pin @ 2200 MHz [1] 3.2 2.8 2.4 RMSA (V) ERR +25C ERR +85C ERR -40C RMSB & Error vs. Pin @ 2200 MHz [1] 4 3 2 RMSB (V) 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C ERR +25C ERR +85C ERR -40C 4 3 2 1 0 -1 -2 -3 -4 10 ERROR (dB) 2 1.6 1.2 0.8 Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C 1 0 -1 -2 -3 -4 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) ERROR (dB) 11 Power Detectors - sMt 0.4 0 -70 RMSA & Error vs. Pin @ 2700 MHz [1] 3.2 2.8 2.4 RMSA (V) ERR +25C ERR +85C ERR -40C RMSB & Error vs. Pin @ 2700 MHz [1] 4 3 2 RMSB (V) 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C ERR +25C ERR +85C ERR -40C 4 3 2 1 0 -1 -2 -3 -4 10 ERROR (dB) 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C 1 0 -1 -2 -3 -4 10 ERROR (dB) RMSA & Error vs. Pin @ 3500 MHz [1] 3.2 2.8 2.4 RMSA (V) ERR +25C ERR +85C ERR -40C RMSB & Error vs. Pin @ 3500 MHz [1] 4 3 2 RMSB (V) 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C ERR +25C ERR +85C ERR -40C 4 3 2 1 0 -1 -2 -3 -4 10 ERROR (dB) 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C 1 0 -1 -2 -3 -4 10 ERROR (dB) [1] wcDMA Input waveform 11 - 7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz RMSB & Error vs. Pin @ 3900 MHz [1] 4 3.2 2.8 2.4 RMSB (V) ERR +25C ERR +85C ERR -40C RMSA & Error vs. Pin @ 3900 MHz [1] 3.2 2.8 2.4 RMSA (V) ERR +25C ERR +85C ERR -40C 4 3 2 1 0 -1 Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C 3 2 1 0 -1 Ideal LOGOUT +25C LOGOUT +85C LOGOUT -40C 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) ERROR (dB) ERROR (dB) -2 -3 -4 10 -2 -3 -4 10 11 Power Detectors - sMt 11 - 8 OUT [P,N] & Error vs. Pin @ 100 MHz [1] [2] 4 OUTN 3 OUT[P,N] (V) OUT [P,N] & Error vs. Pin @ 900 MHz [1] [2] 4 OUTN OUTP 2 ERROR (dB) 4 OUTP 2 OUT[P,N] (V) ERROR (dB) 4 3 2 0 2 0 1 OUTP Err +25C OUTP Err +85C OUTP Err -40C OUTN Err +25C OUTN Err +85C OUTN Err -40C -2 1 OUTP Err +25C OUTP Err +85C OUTP Err -40C OUTN Err +25C OUTN Err +85C OUTN Err -40C -2 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) -4 10 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) -4 10 OUT [P,N] & Error vs. Pin @ 1900 MHz [1][2] 4 OUTN 3 OUT[P,N] (V) OUT [P,N] & Error vs. Pin @ 2200 MHz [1][2] 4 OUTN OUTP 2 ERROR (dB) 4 OUTP 2 OUT[P,N] (V) ERROR (dB) 4 3 2 0 2 0 1 OUTP Err +25C OUTP Err +85C OUTP Err -40C OUTN Err +25C OUTN Err +85C OUTN Err -40C -2 1 OUTP Err +25C OUTP Err +85C OUTP Err -40C OUTN Err +25C OUTN Err +85C OUTN Err -40C -2 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) -4 10 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) -4 10 [1] wcDMA Input waveform [2] INPA Power swept, INPB Fixed Power @ -25 dBm F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz OUT [P,N] & Error vs. Pin @ 2700 MHz [1][2] 4 OUTN 3 OUT[P,N] (V) OUT [P,N] & Error vs. Pin @ 3500 MHz[1][2] 4 4 4 OUTP 2 OUT[P,N] (V) ERROR (dB) 3 OUTN 2 ERROR (dB) 2 0 2 OUTP 1 OUTP Err +25C OUTP Err +85C OUTP Err -40C OUTN Err +25C OUTN Err +85C OUTN Err -40C 0 11 Power Detectors - sMt 1 OUTP Err +25C OUTP Err +85C OUTP Err -40C OUTN Err +25C OUTN Err +85C OUTN Err -40C -2 -2 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) -4 10 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) -4 10 OUT [P,N] & Error vs. Pin @ 3900 MHz [1][2] 4 4 RMSA Intercept vs. Frequency [1] -40 -45 INTERCEPT (dBm) 3 OUT[P,N] (V) OUTN 2 ERROR (dB) -50 -55 -60 -65 -70 -75 +25C +85C -40C 2 OUTP 1 OUTP Err +25C OUTP Err +85C OUTP Err -40C OUTN Err +25C OUTN Err +85C OUTN Err -40C 0 -2 0 -70 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) -4 10 -80 0 1000 2000 FREQUENCY (MHz) 3000 4000 RMSB Intercept vs. Frequency [1] -40 -45 INTERCEPT (dBm) RMSA Slope vs. Frequency [1] 60 55 SLOPE (mV/dB) -50 -55 -60 -65 -70 -75 -80 0 1000 +25C +85C -40C 50 45 40 35 30 +25C +85C -40C 2000 FREQUENCY (MHz) 3000 4000 0 1000 2000 FREQUENCY (MHz) 3000 4000 [1] wcDMA Input waveform [2] INPA Power swept, INPB Fixed Power @ -25 dBm 11 - 9 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz RMSA vs. Pin with WCDMA 4 Carrier @ +25°C [1] [2] 3 2.5 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz RMSB Slope vs. Frequency [1] 60 55 SLOPE (mV/dB) 50 45 40 35 30 RMSA (V) +25C +85C -40C 2 1.5 1 0.5 0 1000 2000 FREQUENCY (MHz) 3000 4000 0 -70 11 -60 -50 -40 -30 -20 -10 0 10 RMSB vs. Pin with WCDMA 4 Carrier @ +25°C [1] [2] 3 2.5 2 RMSB (V) 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz RMSA Error vs. Pin with WCDMA 4 Carrier @ +25°C [1] [2] 4 3 2 ERROR (dB) 1 0 -1 -2 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 1.5 1 0.5 0 -70 -3 -60 -50 -40 -30 -20 -10 0 10 -4 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) RMSB Error vs. Pin with WCDMA 4 Carrier @ +25°C [1] [2] 4 3 2 ERROR (dB) RMSA Error vs. Pin with WCDMA 4 Carrier @ +85°C wrt +25°C Response [1] [2] 4 3 2 ERROR (dB) 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 1 0 -1 -2 -3 -4 -70 -60 -50 -40 -30 -20 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 1 0 -1 -2 -3 -10 0 10 -4 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) [1] wcDMA Input waveform [2] scA1=scA3=scB1=scB3=0V, scA2=scB2=5V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 11 - 10 Power Detectors - sMt INPUT POWER (dBm) HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz RMSA Error vs. Pin with WCDMA 4 Carrier @ -40°C wrt +25°C Response [1] [2] 4 3 2 ERROR (dB) RMSB Error vs. Pin with WCDMA 4 Carrier @ +85°C wrt +25°C Response [1] [2] 4 3 2 ERROR (dB) 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 1 0 -1 -2 -3 -4 -70 -60 -50 -40 -30 1 0 -1 -2 -3 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 11 Power Detectors - sMt -20 -10 0 10 -4 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) RMSB Error vs. Pin with WCDMA 4 Carrier @ -40°C wrt +25°C Response [1] [2] 4 3 2 ERROR (dB) RMSA vs. Pin with CW @ +25°C 3 2.5 2 RMSA (V) 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz [1] [2] 1 0 -1 -2 -3 -4 -70 -60 -50 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 1.5 1 0.5 0 -70 -40 -30 -20 -10 0 10 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) RMSB vs. Pin with CW @ +25°C 3 2.5 2 RMSB (V) 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz [1] [2] RMSA Error vs. Pin with CW @ +25°C [1] [2] 4 3 2 ERROR (dB) 1 0 -1 -2 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 1.5 1 0.5 0 -70 -3 -60 -50 -40 -30 -20 -10 0 10 -4 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) [1] wcDMA Input waveform [2] scA1=scA3=scB1=scB3=0V, scA2=scB2=5V 11 - 11 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz RMSA vs. Pin w/ CW & WCDMA 4 Carrier @ 1900 MHz & +25°C [1] [2] 3 2.5 2 RMSA (V) CW WCDMA RMSB Error vs. Pin with CW @ +25°C [1] [2] 4 3 2 ERROR (dB) 1 0 -1 -2 -3 -4 -70 -60 -50 -40 -30 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 1.5 1 0.5 0 -70 11 -60 -50 -40 -30 -20 -10 0 10 -20 -10 0 10 RMSB vs. Pin w/ CW & WCDMA 4 Carrier @ 1900 MHz & +25°C [1] [2] 3 2.5 2 RMSB (V) CW WCDMA RMSA Reading Error for WCDMA wrt CW Response @ +25°C [1] [2] 1 0.8 0.6 0.4 ERROR (dB) 0.2 0 -0.2 -0.4 -0.6 -0.8 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 1.5 1 0.5 0 -70 -60 -50 -40 -30 -20 -10 0 10 -1 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) RMSB Reading Error for WCDMA wrt CW Response @ +25°C [1] [2] 1 0.8 0.6 0.4 ERROR (dB) RMSA vs. Pin w/ CW & WCDMA 4 Carrier @ 1900MHz & +85°C [1] [2] 3 2.5 2 RMSA (V) CW WCDMA 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -70 -60 -50 -40 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 1.5 1 0.5 0 -70 -30 -20 -10 0 10 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) [1] wcDMA Input waveform [2] scA1=scA3=scB1=scB3=0V, scA2=scB2=5V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 11 - 12 Power Detectors - sMt INPUT POWER (dBm) INPUT POWER (dBm) HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz RMSA Reading Error for WCDMA wrt CW Response @ +85°C [1] [2] 1 0.8 RMSB vs. Pin w/ CW & WCDMA 4 Carrier @ 1900 MHz & +85°C [1] [2] 3 2.5 2 RMSB(V) CW WCDMA 0.6 0.4 ERROR (dB) 0.2 0 -0.2 -0.4 -0.6 -0.8 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 1.5 1 11 Power Detectors - sMt 0.5 0 -70 -60 -50 -40 -30 -20 -10 0 10 -1 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) RMSB Reading Error for WCDMA wrt CW Response @ +85°C [1] [2] 1 0.8 0.6 0.4 ERROR (dB) RMSA vs. Pin w/ CW & WCDMA 4 Carrier @ 1900 MHz & -40°C [1] [2] 3 2.5 2 RMSA (V) CW WCDMA 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -70 -60 -50 -40 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 1.5 1 0.5 0 -70 -30 -20 -10 0 10 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) RMSB vs. Pin w/ CW & WCDMA 4 Carrier @ 1900 MHz & -40°C [1] [2] 3 2.5 2 RMSB (V) CW WCDMA RMSA Reading Error for WCDMA wrt CW Response @ -40°C [1] [2] 1 0.8 0.6 0.4 ERROR (dB) 0.2 0 -0.2 -0.4 -0.6 -0.8 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 1.5 1 0.5 0 -70 -60 -50 -40 -30 -20 -10 0 10 -1 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) [1] wcDMA Input waveform [2] scA1=scA3=scB1=scB3=0V, scA2=scB2=5V 11 - 13 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 100 MHz [2] [3] 60 40 RMSA-RMSB (mV) +25C +85C -40C RMSB Reading Error for WCDMA wrt CW Response @ -40°C [1] [2] 1 0.8 0.6 0.4 ERROR (dB) 20 0 -20 -40 -60 -50 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -70 -60 -50 -40 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 11 -40 -30 -20 -10 0 10 -30 -20 -10 0 10 RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 900 MHz [2] [3] 60 40 RMSA-RMSB (mV) +25C +85C -40C RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 1900 MHz [2] [3] 60 40 RMSA-RMSB (mV) +25C +85C -40C 20 0 -20 -40 -60 -50 20 0 -20 -40 -60 -50 -40 -30 -20 -10 0 10 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 2200 MHz [2] [3] 60 40 RMSA-RMSB (mV) +25C +85C -40C RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 2700 MHz [2] [3] 60 40 RMSA-RMSB (mV) +25C +85C -40C 20 0 -20 -40 -60 -50 20 0 -20 -40 -60 -50 -40 -30 -20 -10 0 10 -40 -30 -20 -10 0 10 INPUT POWER (dBm) [1] wcDMA Input waveform INPUT POWER (dBm) [2] scA1=scA3=scB1=scB3=0V, scA2=scB2=5V [3] cw Input waveform, rMsA referenced F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 11 - 14 Power Detectors - sMt INPUT POWER (dBm) INPUT POWER (dBm) HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 3900 MHz [1] [2] 120 80 +25C +85C -40C RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 3500 MHz [1] [2] 120 80 +25C +85C -40C RMSA-RMSB (mV) 40 0 -40 -80 RMSA-RMSB (mV) -20 -10 0 10 40 0 -40 -80 11 Power Detectors - sMt -120 -50 -40 -30 -120 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) Interference to an Input Signal (INB Power Fixed) with Interfering Signal on the other Channel (INA Power Swept) [1] 6 5 4 ERROR (dB) 0.1 GHz 0.9 GHz 1.9 GHz 2.2 GHz 2.7 GHz 3.5 GHz 3.9 GHz Channel B fixed at -45dBm for f3 GHz Interference to an Input Signal (INA Power Fixed) with Interfering Signal on the other Channel (INB Power Swept) [1] 6 5 4 ERROR (dB) 0.1 GHz 0.9 GHz 1.9 GHz 2.2 GHz 2.7 GHz 3.5 GHz 3.9 GHz Channel A fixed at -45dBm for f3 GHz 3 2 1 0 -1 -30 -25 3 2 1 0 -20 -15 -10 -5 0 5 10 -1 -30 -25 -20 -15 -10 -5 0 5 10 INPUT POWER (dBm) INPUT POWER (dBm) RMS [A, B] Output Response with SCI = 000 @ 1900 MHz 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 TIME (us) 6 7 8 9 RF OFF RF ON RF OFF MSOUT -20 dBm 0 dBm RMS [A, B] Output Response with SCI = 111 @ 1900 MHz 25 20 RF ENABLE VOLTAGE (V) 3 MSOUT 25 -20 dBm 0 dBm 2.5 2 1.5 RF ENABLE 20 RF ENABLE VOLTAGE (V) RMSOUT (V) 10 RF ENABLE RMSOUT (V) 15 15 10 5 RF OFF RF ON RF OFF 5 0 -5 10 1 0.5 0 0 5 10 15 20 25 30 TIME (ms) 0 -5 35 [1] cw Input waveform [2] rMsA referenced 11 - 15 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Input Return Loss vs. Frequency 0 -5 Typical Supply Current vs. Pin, Vcc=5V [1] 180 170 SUPPLY CURRENT (mA) RETURN LOSS (dB) 160 150 140 130 120 110 100 -70 -60 -50 -40 -30 -20 -10 +25C +85C -40C -10 -15 -20 -25 -30 -35 0 10 -40 0 1 2 3 4 5 6 11 Power Detectors - sMt 11 - 16 INPUT POWER (dBm) FREQUENCY (GHz) Output Ripple & Rise/Fall Time vs. Integration Setting[Sci4,Sci3,Sci2,Sci1] in Decimal 1800 Output Ripple Peak-Peak (mV) 100000 Ripple with WCDMA1 Ripple with WCDMA4 Ripple with 8 Tone (1kHz seperation) Ripple with 8 Tone (10kHz seperation) 1500 1200 900 600 300 0 0 1 10000 1000 100 10 1 0.1 Rise Time & Fall Time (us) 2 3 4 5 6 7 Integration Setting (in Decimal) [1] cw Input waveform F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz ETB vs. Pin with CW @ 900 MHz 2.5 ETA vs. Pin with CW @ 900 MHz 2.5 2 ETA (V) ETB (V) +25C +85C -40C 2 1.5 1.5 1 11 Power Detectors - sMt 1 +25C +85C -40C 0.5 0 0.05 0.1 0.15 0.2 0.5 0 0.05 0.1 0.15 0.2 INPUT VOLTAGE (Vp-p) INPUT VOLTAGE (Vp-p) ETA & ETA Error vs. Pin with CW @ 900 MHz 10 +25C +85C -40C 4 ETB & ETB Error vs. Pin with CW @ 900 MHz 10 +25C +85C -40C 4 Normalized ETA (V) Normalized ETB (V) 1 2 ERROR (dB) 1 2 ERROR (dB) 0.1 0 0.1 0 0.01 Error +25C Error +85C Error -40C -2 0.01 Error +25C Error +85C Error -40C -2 0.001 -40 -35 -30 -25 -20 -15 -10 -5 INPUT POWER (dBm) -4 0.001 -40 -35 -30 -25 -20 -15 -10 -5 INPUT POWER (dBm) -4 ETA vs. Pin with CW @ 1900 MHz 2.5 ETB vs. Pin with CW @ 1900 MHz 2.5 2 2 ETA (V) 1.5 ETB (V) +25C +85C -40C 1.5 1 1 +25C +85C -40C 0.5 0 0.05 0.1 0.15 0.2 0.5 0 0.05 0.1 0.15 0.2 INPUT VOLTAGE (Vp-p) INPUT VOLTAGE (Vp-p) 11 - 17 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz ETB & ETB Error vs. Pin with CW @ 1900 MHz 10 +25C +85C -40C ETA & ETA Error vs. Pin with CW @ 1900 MHz 10 +25C +85C -40C 4 4 Normalized ETA (V) Normalized ETB (V) 1 2 ERROR (dB) 1 2 ERROR (dB) 0.1 0 0.1 0 0.01 Error +25C Error +85C Error -40C -2 0.01 Error +25C Error +85C Error -40C -2 0.001 -40 -35 -30 -25 -20 -15 -10 -5 INPUT POWER (dBm) -4 0.001 -40 -35 -30 -25 -20 -15 -10 -5 INPUT POWER (dBm) -4 11 Power Detectors - sMt 11 - 18 ETA vs. Pin with CW @ 3500 MHz 2.5 ETB vs. Pin with CW @ 3500 MHz 2.5 2 ETA (V) ETB (V) +25C +85C -40C 2 1.5 1.5 1 1 +25C +85C -40C 0.5 0 0.05 0.1 0.15 0.2 0.5 0 0.05 0.1 0.15 0.2 INPUT VOLTAGE (Vp-p) INPUT VOLTAGE (Vp-p) ETA & ETA Error vs. Pin with CW @ 3500 MHz 10 +25C +85C -40C 4 ETB & ETB Error vs. Pin with CW @ 3500 MHz 10 +25C +85C -40C 4 Normalized ETA (V) Normalized ETB (V) 1 2 ERROR (dB) 1 2 ERROR (dB) 0.1 0 0.1 0 0.01 Error +25C Error +85C Error -40C -2 0.01 Error +25C Error +85C Error -40C -2 0.001 -40 -35 -30 -25 -20 -15 -10 -5 INPUT POWER (dBm) -4 0.001 -40 -35 -30 -25 -20 -15 -10 -5 INPUT POWER (dBm) -4 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz ETB Intercept vs. Frequency with CW -50 -60 ETA Intercept vs. Frequency with CW -50 -60 INTERCEPT (mV) -80 -90 -100 -110 -120 0 1000 +25C +85C -40C INTERCEPT (mV) -70 -70 -80 -90 -100 -110 +25C +85C -40C 11 Power Detectors - sMt 2000 FREQUENCY (MHz) 3000 4000 -120 0 1000 2000 FREQUENCY (MHz) 3000 4000 ETA Slope vs. Frequency with CW 18 16 14 12 10 8 6 +25C +85C -40C ETB Slope vs. Frequency with CW 18 16 14 12 10 8 6 +25C +85C -40C SLOPE (V/V) 0 1000 2000 FREQUENCY (MHz) 3000 4000 SLOPE (V/V) 0 1000 2000 FREQUENCY (MHz) 3000 4000 ETA Output Response @ 1900 MHz 3 2.5 2 ETA (V) -10 dBm -20 dBm ETA ETB Output Response @ 1900 MHz 25 20 RF ENABLE VOLTAGE (V) 3 2.5 2 ETB (V) -10 dBm -20 dBm ETB 25 20 RF ENABLE VOLTAGE (V) 15 10 RF ENABLE 15 10 RF ENABLE 1.5 1 0.5 0 0 20 40 60 80 100 120 TIME (ns) RF OFF RF ON RF OFF 1.5 1 0.5 0 0 20 40 60 80 100 120 TIME (ns) RF OFF RF ON RF OFF 5 0 -5 140 5 0 -5 140 11 - 19 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Absolute Maximum Ratings supply Voltage single-ended rF Input Power Input Voltage channel / Junction temperature continuous Pdiss (t = 85°c) (Derate 55.29 mw/°c above 85°c) thermal resistance (rth) (junction to ground paddle) storage temperature operating temperature esD sensitivity (HBM) 5.6V 10 dBm Vcc + 0.6V 125°c 2.21 watts 18.09 °c/w -65 to +150 °c -40 to +85 °c class 1B 11 Power Detectors - sMt Lead Finish 100% matte sn MsL rating MsL1 [1] eLectrostAtIc seNsItIVe DeVIce oBserVe HANDLING PrecAUtIoNs Outline Drawing Package Information Part Number HMc1030LP5e Package Body Material roHs-compliant Low stress Injection Molded Plastic Package Marking [2] H1030 XXXX [1] Max peak reflow temperature of 260 °c [2] 4-Digit lot number XXXX F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 11 - 20 HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Pin Descriptions Pin Number Function Description Digital input pins that control the internal integration time constant for mean square calculation. scA(B)3 is the most significant bit. Set V>0.2xVcc to disable. Shortest integration time is for scA(B)=000, longest integration time is for scA(B)=111. each step changes the integration time by 1 octave. Interface schematic 1, 8, 9, 10, 31,32 scA1, scB1, scB2, scB3, scA3, scA2 11 Power Detectors - sMt 2, 3 INNA, INPA rF Input Pins. 6, 7 INPB, INNB 4, 25 eNX, eNoUt Disable pin. connect to GND for normal operation. Applying voltage V > 0.8 Vcc will initiate power saving mode. 5, 11, 30 VccBs, VccB, VccA Bias supply. connect supply voltage to these pins with appropriate filtering. 11 - 21 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Pin Descriptions (Continued) Pin Number Function Description Interface schematic 12, 13, 28, 29 coPB, coNB, coNA, coPA Input high pass filter capacitor. connect a capacitor between coPA(coNA) and coPB(coNB) to determine 3 dB point of input signal high-pass filter. 11 14, 27 etB, etA Linear output that provides an indication of envelope of the input signal. 15 VreF2 2.5V reference voltage output. 16 VLVL VsetB, VsetA reference level input for oUtP and oUtN. connect to VreF for normal operation. Vset inputs. set point inputs for controller mode. 17, 24 18, 23 rMsB, rMsA Logarithmic outputs that convert the input power to a Dc level for channel A and channel B. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 11 - 22 Power Detectors - sMt HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Pin Descriptions (Continued) Pin Number 19 Function FBKB Description Feedback through 3.5k ohm to the negative terminal of the integrated op Amp driving oUtN output providing the difference of rMs outputs using an op Amp. For normal operation, connected to FBKB to provide the function: oUtN = rMsB - rMsA + VLVL output providing the difference of rMs outputs using an op Amp. For normal operation, connected to FBKA to provide the function: oUtP = rMsA - rMsB + VLVL Interface schematic 20 oUtN 21 oUtP 11 Power Detectors - sMt 22 FBKA Feedback through 3.5K ohms to the negative terminal of the integrated op Amp driving oUtP 26 teMP temperature sensor output. see Application Note section. GND Package bottom has an exposed metal paddle that must be connected to rF/Dc ground. 11 - 23 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Evaluation PCB - Wideband Single-Ended 11 Power Detectors - sMt 11 - 24 List of Materials for Evaluation PCB EVAL01-HMC1030LP5E[1] Item J1, J4, J8, J12, J13, J14, J15, J18 J19, tP2, tP3, tP5, tP6, tP7, tP9, tP10, tP11, tP16, tP17 c1, c2, c5, c6, c9, c15, c16, c21 c12, c13, c14, c17, c18, c19 c7, c10, c11, c20, c22, c23 c8 r2, r8 r1, r3, r5, r7, r9, r11 r18, r30 r22, r23, r27, r28, r31 r6, r12-14,r35-39 r15, r17, r32, r34 r24, r21, r24, r29 r4, r10,r16, r20,r25-26, r33 Description sMA connector Item U1 PcB [2] Description HMc1030LP5e single-ended Dual rMs Power Detector 600-00049-00-1 evaluation PcB Dc Pin 1 nF capacitor, 0402 Pkg. 10 pF capacitor, 0402 Pkg. 100 pF capacitor, 0402 Pkg. 100 nF capacitor, 0402 Pkg. 49.9 ohm resistor, 0402 Pkg. 68.1 ohm resistor, 0402 Pkg. 560 ohm resistor, 0402 Pkg. 1K ohm resistor, 0402 Pkg. 10K ohm resistor, 0402 Pkg. 39K ohm resistor, 0402 Pkg. 100K ohm resistor, 0402 Pkg. 0 ohm resistor, 0402 Pkg. the circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation PcB [2] circuit Board Material: rogers 4350 or Arlon 25Fr F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Application Circuit - Wideband Single-Ended 11 Power Detectors - sMt 11 - 25 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Application Information Principle of Operation 11 Power Detectors - sMt 11 - 26 the HMc1030LP5e is a dual-channel rMs and envelope detector in a single package. the HMc1030LP5e’s rMs detector core is designed to measure the actual rMs power of the input signal, independent of the modulated signal waveform complexity or the modulation scheme. the rMs detector core architecture of HMc1030LP5e is composed of a full-wave rectifier, log/antilog circuit, and an integrator as shown above. the rMs output signal is directly proportional to the logarithm of the time-average of VIN2. the bias block also contains temperature compensation circuits which stabilize output accuracy over the entire operating temperature range. the Dc offset cancellation circuit actively cancels internal offsets so that even very small input signal levels can be measured accurately. the HMc1030LP5e supports controller mode operation. For more information regarding controller mode operation, please contact Hittite application support. the HMc1030LP5e achieves exceptional rF power measurement accuracy independent of the modulation of the carrier with this system architecture. the relation between the HMc1030LP5e’s rMsoUt output and the rF input power is given below 1 ln(ßk G2∫VIN2dt) k VRMSOUT = VRMSA vs. PIN with WCDMA 4 Carrier @ 1900 MHz 3 2.5 Ideal Measured Pin = VrMs/[log-slope]+[log-intercept], dBm RMSOUT (V) where ß is op-amp gain set via resistors on the Vset pin. 2 1.5 1 0.5 0 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz HMc1030LP5e’s envelope detector core is capable of extracting the envelope information of the modulated rF signal with modulation bandwidths in excess of 100 MHz. the extracted envelope information is independent of the average power and the crest factor of the rF signal. the rMs detector core provides a linear-in-dB output of the average rF power, whereas the envelope detector core provides a linear representation of the instantaneous envelope waveform. the envelope detection feature may be used in ultra-fast excessive rF power protection systems, PA linearization techniques and in efficiency enhancing Envelope-Tracking PA implementations. VRMSA & VETA & WCDMA 4 Carrier with -20dBm RF Input vs. Time @ 900 MHz 11 VET, RMS (V) 2.17 1.86 1.55 1.24 0.93 0.62 0.31 0 RF Input ETOUT RMSOUT 80 60 40 20 0 -20 -40 -60 -80 0 200 400 600 800 1000 Time (ns) RF Input (mV) Power Detectors - sMt -0.31 Measuring the etoUt and rMs output voltage signals simultaneously provides a very informative picture of the rF input signal such as, peak power, average power, peak-to-average power, and rF wave-shape. simultaneous measurement of instantaneous signal power and average power is essential for taking full advantage of a receive signal chain’s available dynamic range, while avoiding saturation, or to maximize transmitter efficiency. Configuration for the Typical Application The HMC1030LP5E requires a single 5V supply with an adequate power supply decoupling as recommended in the application schematic. Inputs of the HMC1030LP5E are broadband matched to 50 Ohm single-ended with details included in the subsequent “ Broadband single-ended Input Interface” section. the rMsA & rMsB outputs are typically connected to VsetA & VsetB inputs through a resistive network, resulting in a Pin VrMs transfer characteristic with a slope of 37 mV/dBm (at 1900 MHz) for both channels. However, the rMs outputs can be re-scaled to “magnify” a specific portion of the input sensing range, and to fully utilize the dynamic range of the rMs outputs. refer to the section under the “Log-slope and Intercept” section for details. the oUtP & oUtN outputs provide the input signal power ratio between the two power detection channels. the oUtP & oUtN outputs are typically connected to FBKA & FBKB. An input voltage applied to the VLVL input pin is used to set the common mode voltage reference level for the oUtP & oUtN. the VLVL pin is typically connected to VreF2 output to provide a nominal bias voltage of 2.5V. optionally, external bias voltage may be applied to VLVL. refer to the section under the “channel Difference outputs” for details. the etA & etB outputs provide linearly scaled replica of the instantaneous envelope of the modulated rF signal with modulation bandwidths up to 150 MHz for both channels. For optimum performance, the et outputs of the HMc1030LP5e should be terminated to ground with a 560 ohm load resistor. refer to the section under the “envelope Detector output” for details. 11 - 27 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz the scA1-3 & scB1-3 inputs are configured digitally to set the integration bandwidth of the rMs detectors for both channels. refer to the section under the “rMs output Interface and transient response” section for details. the coFAP-N & coFBP-N inputs determine the 3dB bandwidth of the input high pass filter for both channels. typically 1nF external high pass filter capacitors are connected between coFAP & coFAN and between coFBP & coFBN for a banwdith of 62 kHz. the eNX input is the enable pin of the device. the eNoUt input is the enable pin of the integrated opAmps driving rMsA & rMsB. Both eNX and eNoUt are enable high. Due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy absolute accuracy requirements: refer to the “System Calibration” section for more details. 11 Power Detectors - sMt 11 - 28 Broadband Single-Ended Input Interface the HMc1030LP5e inputs are broadband matched to single-ended 50 ohm with the configuration shown below. The interface and requires only two external DC blocking capacitors and an external 50 Ohm resistor over the entire frequency band of operation. The integrated broadband single-ended input interface of HMC1030LP5E eliminates the requirement for an external balun transformer or matching network and provides a compact, broadband solution. Note that the provided single-ended input interface covers the whole operating spectrum of the HMC1030LP5E and does not require matching tuning for different frequencies. The performance of the HMC1030LP5E at different frequencies is shown below: VRMSA & Error vs. Pin 3.2 2.8 2.4 RMSOUT (V) LOGOUT 100MHz LOGOUT 900MHz LOGOUT 1900MHz LOGOUT 2200MHz LOGOUT 2700MHz LOGOUT 3500MHz LOGOUT 3900MHz 4 3 2 1 0 ERR 100MHz ERR 900MHz ERR 1900MHz ERR 2200MHz ERR 2700MHz ERR 3500MHz ERR 3900MHz 2 1.6 1.2 0.8 0.4 0 -70 -60 -50 ERROR (dB) -1 -2 -3 -4 -40 -30 -20 -10 0 10 INPUT POWER (dBm) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Dual RMS Detection Channels the HMc1030LP5e integrates two HMc1021LP4e rMs detection channels with shared bias and control circuitry. Proprietary design techniques enable extremely good matching between channels over a wide range of input frequencies with low temperature drift. Channel Matching Part-to-part variations for single channel rMs detectors complicate simultaneous power readings. simultaneous signal power measurements are particularly useful for automatic gain/level control and Vswr measurements. when separate power detectors are used, the lack of an accurate match between the power detectors result in measurement errors. Calibration and compensation methods are required to counteract the differences between the separate power detectors. the HMc1030LP5 dual rMs detector greatly simplifies that activity, and will reliably produce more accurate measurements. The HMC1030LP5E provides industry leading channel matching performance with the use of proprietary techniques. The channel mismatch is typically less than 100 mV over the specified temperature and frequency range with the integrated broadband single-ended input interface. 11 Power Detectors - sMt Channel Matching (RMSA-RMSB) 0.2 0.15 0.1 0.1 GHz 0.9 GHz 1.9 GHz 2.2 GHz 2.7 GHz 3.5GHz 3.9GHz RMSA-RMSB (V) 0.05 0 -0.05 -0.1 -0.15 -0.2 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) Channel Isolation/Interference Off-chip interference between channels should be minimized with good RF board design practices and the quality of the soldered connections. on-chip inter-channel interference, manifests itself as the variation on one detector output due to a relatively strong signal present at the other detector input. Quantitatively, the input-output channel isolation is defined as the difference between the input power levels at both channels when the interfering (higher power level) channel causes a 1 dB measurement error in the victim channel. worst case channel interference occurs when victim channel has an input signal level just over its detection threshold. Input-output channel isolation for HMc1030LP5e is: 55 dB input-output isolation at 0.9 GHz 49 dB input-output isolation up to 2.2 GHz 40 dB input-output isolation up to 3.9 GHz. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 11 - 29 HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz If the same input signal frequency is applied to both channels, the interference will occur as a phase delay. A slight offset in signal frequency between the two channels can be seen as a ripple at the output of the channel with the lower power level applied at its input. Peaks in the output ripple correspond to the worst-case phase shift for inputoutput interference. The frequency of the output ripple will be equal to the “beat” frequency between the two channels. the magnitude of the output ripple will depend on the scI (integration) settings and offset capacitors connected to coFA & coFB pins, respectively. the output ripple is reduced by increasing the value of the scI setting, thereby decreasing the integrator bandwidth. the data was collected using a 1 kHz offset between the channels. Interference to an Input Signal (INB Power Fixed) with Interfering Signal on the other Channel (INA Power Swept) 5 ERROR IN CHANNEL B (dB) Interference to an Input Signal (INA Power Fixed) with Interfering Signal on the other Channel (INB Power Swept) 5 ERROR IN CHANNEL A (dB) 11 Power Detectors - sMt 11 - 30 4 3 0.1 GHz 0.9 GHz 1.9 GHz 2.2 GHz 2.7 GHz 3.5GHz 3.9GHz 4 3 0.1 GHz 0.9 GHz 1.9 GHz 2.2 GHz 2.7 GHz 3.5GHz 3.9GHz 2 2 1 1 0 -30 -25 -20 -15 -10 -5 0 5 10 INPUT POWER (dBm) 0 -30 -25 -20 -15 -10 -5 0 5 10 INPUT POWER (dBm) Envelope Detector Outputs the HMc1030LP5e features envelope detection for both channels. the etA & etB outputs provide a linearly scaled replica of the instantaneous envelope of the modulated rF signal for modulation bandwidths up to 150 MHz at for both channels. For optimum performance, the etA & etB pins of the HMc1030LP5e should be terminated with a 560 ohm load resistor to GND. Note that any capacitive loading on the etA & etB pins would reduce the modulation bandwidth of the envelope detection. the envelope outputs have a conversion gain of 15V/V with an output voltage ranging from 1.0V to 2.1V. ETA vs. Input Peak Voltage @ 900 MHz 2.5 2 ETOUT (V) 1.5 1 +25C +85C -40C 0.5 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 INPUT PEAK VOLTAGE (Vp-p) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz the waveform below shows the HMc1030LP5e’s envelope detector response to an rF input signal with a 100 MHz modulation bandwidth. ETOUT Response to an RF Input Signal with 100 MHz Modulation Bandwidth 11 Power Detectors - sMt Channel Difference Outputs HMc1030LP5e features oUtP and oUtN “channel difference” outputs that can be used differentially or singleended. the oUtP and oUtN outputs provide direct read of input signal power ratio between the two channels. the oUtP and oUtN are connected to FBKA and FBKB pins respectively. the oUtP and oUtN are defined with the following equations: oUtP = rMsA - rMsB + VLVL oUtN = rMsB - rMsA + VLVL where, the VLVL is the common mode reference level applied at the VLVL pin. the VLVL pin can be connected to VreF2 output to provide a nominal base voltage of 2.5V. optionally; external bias voltage can be applied to VLVL. Channel Difference Outputs @ 1900 MHz, Channel A Power Swept, Channel B @ -25 dBm, VLVL=2.5V 4 3 2 1 OUTP OUTN with the channels of HMc1030LP5e having very low mismatch, and located on the same die, the channel outputs rMsA and rMsB track very closely over temperature. the difference operation also allows the oUtP and oUtN to reject common-mode changes in channels A and B. OUTPUT (V) 0 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) 11 - 31 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz RMS Output Interface and Transient Response the HMc1030LP5e features digital input pins (scI1-scI3) that control the internal integration time of the rMs detector. the rMs output transient response is determined by the digital integration controls, and output load conditions. the scI3 is the most significant bit, and the longest integration time is for scI=111. Using larger values of scI will narrow the operating bandwidth of the integrator, resulting in a longer averaging time interval and a more filtered output signal. It will also slow the power detector’s transient response. A larger scI value favors output accuracy over speed. For the fastest possible transient settling time,s set scI to 000. this configuration will operate the integrator at its widest possible bandwidth, resulting in short averaging time-interval and an output signal with little filtering. For most applications an scI setting may be selected to maintain a balance between speed and accuracy. Furthermore, error performance over modulation bandwidth is dependent on the scI setting. For example modulations with relatively low frequency components and high crest factors may require higher scI (integration) settings. excessive loading at the rMs output impacts the transient response. It is recommended to keep load resistance above 500 ohm. For increased load drive capability, consider a buffer amplifier on the rMs output. Using an integrating amplifier on the rMs output allows for an alternative treatment for faster settling times. An external amplifier optimized for transient settling can also provide additional rMs filtering when operating HMc1030LP5e with a lower scI value. 11 Power Detectors - sMt 11 - 32 Table 1: Transient Response vs. SCI Setting: RMSOUT Rise-Time 10% -> 90% (µs) [3] scI3,2,1 000 001 010 011 100 101 110 111 Pin = 0 dBm 0.06 0.06 0.06 1.18 4.82 21.3 90.5 381 Pin = -20 dBm 0.04 0.04 0.06 2.94 11.9 50 205 851 Pin = -40 dBm 0.03 0.06 0.74 3.57 15 67.2 278 1120 RMSOUT Rise Settling Time (µs) [2] Pin = 0 dBm 0.06 0.06 0.06 4.69 23.9 107 486 2047 Pin = -20 dBm 0.04 0.04 2.30 8 32 130 520 2042 Pin = -40 dBm 0.04 0.06 0.78 5 21.5 91.3 378 1515 RMSOUT Fall-time 100% -> 10% (µs) [4] Pin = 0 dBm 0.9 2.7 10.7 43.7 178 727 3000 12240 Pin = -20 dBm 0.9 2.7 10.7 43 176 718 2950 12066 Pin = -40 dBm 0.8 2.54 10 41.4 169 667 2730 11770 Rise Time[1] vs. SCI Setting over Input Power 10000 1000 -40 dBm -20 dBm 0 dBm Rise Settling Time[2] vs. SCI Setting over Input Power 100000 10000 1000 100 10 1 0.1 -40 dBm -20 dBm 0 dBm RISE TIME (us) 100 10 1 0.1 0.01 RISE SETTLING TIME (us) 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 INTEGRATION SETTING (IN DECIMAL) INTEGRATION SETTING (IN DECIMAL) [1] Measured from 10% to 90% [2] Measured from rF switching edge to 1dB (input referred) settling of rMsoUt. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Fall Time [1] vs. SCI Setting over Input Power 100000 -40 dBm -20 dBm 0 dBm 10000 FALL TIME (us) 1000 100 11 Power Detectors - sMt 2 1.8 1.6 1.4 RMSOUT (V) 10 1 0 1 2 3 4 5 6 7 INTEGRATION SETTING (IN DECIMAL) Residual Ripple for 0.9 GHz OFDM Advanced 802.16 @ SCI = 010 100 80 60 RF INPUT Residual Ripple for 0.9 GHz WiMAX OFDM Advanced 802.16 @ SCI = 011 2 1.8 1.6 1.4 RMSOUT (V) RF INPUT 100 80 60 40 20 0 -20 -40 RMSOUT SCI = 000 SCI = 011 RF INPUT VOLTAGE (mV) RF INPUT VOLTAGE (mV) 40 20 0 -20 -40 1.2 1 0.8 0.6 0.4 RMSOUT 0.2 0 0 50 100 150 200 250 300 350 400 SCI = 000 SCI = 010 1.2 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 250 300 350 400 -60 -80 -100 450 500 -60 -80 -100 450 500 TIME (us) TIME (us) Residual Ripple for 0.9 GHz WIBRO @ SCI = 011 2 1.8 1.6 1.4 RMSOUT (V) RF INPUT Residual Ripple for 0.9 GHz WIBRO @ SCI = 101 100 80 60 40 20 0 -20 -40 RF INPUT VOLTAGE (mV) 2 1.8 1.6 1.4 RMSOUT (V) RF INPUT 100 80 60 40 20 0 -20 -40 -60 SCI = 000 SCI = 011 RF INPUT VOLTAGE (mV) 1.2 1 0.8 0.6 0.4 RMSOUT 0.2 0 0 0.5 1 1.5 2 2.5 TIME (ms) 3 3.5 4 SCI = 000 SCI = 011 1.2 1 0.8 0.6 0.4 RMSOUT 0.2 0 0 0.5 1 1.5 2 2.5 TIME (ms) 3 3.5 4 -60 -80 -100 4.5 5 -80 -100 4.5 5 [1] Measured from 100% to 10% 11 - 33 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz Residual Ripple for 0.9 GHz LTE Downlink @ SCI = 011 100 80 60 RF INPUT VOLTAGE (mV) Residual Ripple for 0.9 GHz LTE Downlink @ SCI = 010 2 1.8 1.6 1.4 RMSOUT (V) RF INPUT 2 1.8 1.6 1.4 RMSOUT (V) RF INPUT 100 80 60 40 20 0 -20 -40 RMSOUT SCI = 000 SCI = 011 RF INPUT VOLTAGE (mV) 40 20 0 -20 -40 1.2 1 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 RMSOUT SCI = 000 SCI = 010 1.2 1 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -80 -100 1.8 2 TIME (ms) -60 -80 -100 1.8 2 TIME (ms) 11 Power Detectors - sMt 11 - 34 Residual Ripple for 0.9 GHz WCDMA-4TM @ SCI = 011 2 1.8 1.6 1.4 RMSOUT (V) RF INPUT Residual Ripple for 0.9 GHz WCDMA-4TM @ SCI = 100 100 80 60 40 20 0 -20 -40 RF INPUT VOLTAGE (mV) 2 1.8 1.6 1.4 RMSOUT (V) RF INPUT 100 80 60 40 20 0 -20 -40 RMSOUT SCI = 000 SCI = 100 RF INPUT VOLTAGE (mV) 1.2 1 0.8 0.6 0.4 0.2 0 0 100 200 300 400 500 600 700 800 TIME (us) RMSOUT SCI = 000 SCI = 011 1.2 1 0.8 0.6 0.4 0.2 0 0 100 200 300 400 500 600 700 800 TIME (us) -60 -80 -100 900 1000 -60 -80 -100 900 1000 LOG-Slope and Intercept the HMc1030LP5e provides for an adjustment of output scale with the use of integrated operational amplifiers for both channels. Log-slope and intercept can be adjusted to “magnify” a specific portion of the input sensing range, and to fully utilize the dynamic range of the rMs outputs. A log-slope of 37 mV/dB (@1900 MHz) is set by connecting rMs output to Vset through a resistor network for B=1 (see application schematic). the log-slope is adjusted by using the appropriate resistors rFBKA, rFBKB, rsHUNtA, rsHUNtB on the rMsA/rMsB and VsetA/VsetB pins. Log-intercept is adjusted by applying Dc voltage to the VBLINeA and /VBLINeB. Due to the 15k ohm input resistance at the VsetA/VsetB pins, moderately low resistance values should be used to minimize the scaling errors. Very low resistor values will reduce the load driving capabilities of rMsA/rMsB outputs while larger values will result in scaling errors and increase of the temperature errors because of the mismatch of the on-chip and external resistor temperature coefficients. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz optimized slope = B * log-slope optimized intercept = log-intercept – (rFBK /rset ) * VBLINe ß =(1/2) rFBK rFBK // rsHUNt // rset 11 Power Detectors - sMt when rFBK=0 to set VrMs=Vset, then B=1/2. If rset is not populated, then B =1/2 * (rFBK / (rFBK // rsHUNt)) and intercept is at nominal value. Note: Avoid excessive loading of the rMs output; keep cLoAD < 35 pF, and rLoAD > 375 Ohm example: the logarithmic slope can be simply increased by choosing appropriate rFBK and rsHUNt values while not populating the rset resistor on the evaluation board to keep the intercept at nominal value. setting rFBK =1k ohm and rsHUNt = 0.5k ohm results in an optimized slope of: optimized slope = B * log_slope = 1.5* 37 mV / dB optimized slope = 55.5 mV / dB Slope Adjustment 4.5 4 3.5 RMSOUT (V) Nominal High Slope 3 2.5 2 1.5 1 0.5 0 -70 Slope = 55.5 mV/dB Rset = open Rfbk = 1 Kohm Rshunt = 0.5 Kohm Slope = 37.2 mV/dB Rset = open Rfbk = 1 Kohm Rshunt = 1 Kohm -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) 11 - 35 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz example: the logarithmic intercept can also be adjusted by choosing appropriate rFBK, rsHUNt, and rset values. setting rFBK = 1k ohm, rsHUNt = 0.5k ohm, and rset = 4.7k ohm results in an optimized slope of: optimized slope = B * log_slope = 1.6 * 37 mV / dB optimized slope = 59.2 mV / dB optimized Intercept = log_intercept –(rFBK /rset )*VBLINe optimized Intercept = log_intercept - 0.213 * VBLINe Intercept Adjustment 4.5 4 3.5 RMSOUT (V) Rset = 4.7 Kohm Rfbk = 1 Kohm Rshunt = 0.5 Kohm 11 Power Detectors - sMt 11 - 36 3 2.5 2 1.5 1 0.5 0 -70 -60 -50 -40 -30 -20 VBLINE = -3.2 V VBLINE = -1.6 V VBLINE = -0.8 V VBLINE = 0 V VBLINE = +0.8 V VBLINE = +1.6 V VBLINE = +3.2 V -10 0 10 INPUT POWER (dBm) Temperature Sensor Interface the HMc1030LP5e provides a buffered PtAt temperature sensor output that provides a temperature scaling factor of 2 mV/°c with a typical output voltage of 567 mV at 0°c. the output is capable of sourcing 1.5 mA. TEMP Output 0.8 0.7 TEMPOUT TEMPOUT (V) 0.6 0.5 0.4 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 TEMPERATURE (Celcius) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz DC Offset Compensation Loop Internal DC offsets, which are input signal dependant, require continuous cancellation. Offset cancellation is a critical function needed for maintenance of measurement accuracy and sensitivity. the Dc offset cancellation loop performs this function, and its response is largely defined by the capacitances (coFs) connected between coFPA&coFNA pins and between coFPB&coFNB pins. the coFs capacitors sets the loop bandwidth of the Dc offset compensations. Higher COFS values are required for measuring lower RF frequencies. The optimal loop bandwidth setting will allow internal offsets to be cancelled at a minimally acceptable speed. 11 Power Detectors - sMt Dc offset cancellation Loop ≈ 1 π(500)(coFs + 20 x 1012) Bandwidth , Hz For example: loop bandwidth for Dc cancellation with coFs = 1nF, bandwidth is ~62 kHz Standby Mode the eNX pin can be used to force the power detector into a low-power standby mode. As eNX is deactivated, power is restored to all of the circuits. there is no memory of previous conditions. coming out of stand by, internal integration and COFS capacitors will require recharging, so if large SCI values or large COFS capacitor values have been chosen, the wake-up time will be lengthened. Modulation Performance – Crest factor performance the HMc1030LP5e is able to detect the average power of rF signals with complex modulation schemes with exceptional accuracy. the proprietary rMs detection core is optimized to accurately detect the rMs power of the modulated rF signals with very high crest factors. this crest factor immune detection architecture of HMc1030LP5e results in detection accuracy of better than 0.2 dB over the entire operating frequency and temperature range, compared with the cw response under actual wcDMA4tM test signals shown below: Reading Error for WCDMA 4 Carrier wrt CW Response @ +25°C 1 0.8 0.6 0.4 ERROR (dB) Reading Error for WCDMA 4 Carrier wrt CW Response @ 1900 MHz 1 0.8 0.6 0.4 ERROR(dB) 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -70 -60 -50 -40 -30 100MHz 900MHz 1900MHz 2200MHz 2700MHz 3500MHz 3900MHz 0.2 0 -0.2 -0.4 -0.6 -0.8 +25C +85C -40C -20 -10 0 10 -1 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) 11 - 37 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1030LP5E v01.0411 DUAL RMS POWER DETECTOR DC - 3.9 GHz RMSA Error vs. Crest Factor over Frequency 1 RMSA READING ERROR (dB) 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 3 4 5 6 7 8 9 10 11 12 13 1900 MHz Error from CW (-37 dBm) 2700 MHz Error from CW (-39 dBm) 11 Power Detectors - sMt 11 - 38 INPUT SIGNAL CREST FACTOR (dB) System Calibration Due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy absolute accuracy requirements. When performing this calibration, choose at least two test points: near the top-end and bottom-end of the measurement range. It is best to measure the calibration points in the regions (of frequency and amplitude) where accuracy is most important. Derive the log-slope and log-intercept, and store them in non-volatile memory. For example if the following two calibration points were measured at 2.35 GHz: with Vrms = 2.34V at Pin = -7 dBm, and Vrms=1.84V at Pin = -16 dBm slope calibration constant = scc scc = (-16+7)/(1.84-2.34) = 18 dB/V Intercept calibration constant = Icc Icc = Pin – scc*Vrms = -7 – 18.0 * 2.34 = -49.12 dBm Factory system calibration measurements should be made using an input signal representative of the application. If the power detector will operate over a wide range of frequencies, choose a central frequency for calibration. Now performing a power measurement: Vrms measures 2.13V [Measured Pin] = [Measured Vrms]*scc + Icc [Measured Pin] = 2.13*18.0 – 49.12 = -10.78 dBm An error of only 0.22 dB Layout Considerations • Mount RF input coupling capacitors close to the IN+ and IN- pins. • Solder the heat slug on the package underside to a grounded island which can draw heat away from the die with low thermal impedance. the grounded island should be at rF ground potential. • Connect power detector ground to the RF ground plane, and mount the supply decoupling capacitors close to the supply pins. Definitions: • Log-slope: slope of PIN –> VrMs transfer characteristic. In units of mV/dB • Log-intercept: x-axis intercept of PIN –> VrMs transfer characteristic. In units of dBm. • RMS Output Error: The difference between the measured PIN and actual PIN using a line of best fit. [measured_PIN] = [measured_VrMs] / [best-fit-slope] + [best-fit-intercept], dBm • Input Dynamic Range: the range of average input power for which there is a corresponding RMS output voltage with “rMs output error” falling within a specific error tolerance. • Crest Factor: Peak power to average power ratio for time-varying signals. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com