HMC128

v02.0802 MICROWAVE CORPORATION HMC128 GaAs MMIC DOUBLE-BALANCED MIXER, 1.8 - 5.0 GHz Features Conversion Loss: 7 dB LO to RF and IF Isolation: >36 dB Input IP3: +18 dBm Typical Applications The HMC128 is ideal for: • Microwave & VSAT Radios • Test Equipment • Military EW, ECM, C I • Space Telecom 3 Small Size, No DC Bias Required Functional Diagram General Description The HMC128 is a miniature double-balanced mixer chip that can be used as an upconverter or downconverter. The device is a passive diode/ balun type mixer with high dynamic range. Noise figure is essentially equal to the conversion loss. The mixer can handle larger signal levels than active mixers due to the high third order intercept. MMIC implementation provides exceptional balance in the circuit resulting in high LO/RF and LO/IF isolations. This mixer can operate over a wide LO Drive input of +9 to +15 dBm. 5 MIXERS - CHIP Electrical Specifications, TA = +25° C, LO Drive = +15 dBm Parameter Frequency Range, RF & LO Frequency Range, IF Conversion Loss Noise Figure (SSB) LO to RF Isolation LO to IF Isolation IP3 (Input) IP2 (Input) 1 dB Gain Compression (Input) 35 27 15 45 5 Min. Typ. 1.8 - 5.0 DC - 3.0 7 7 42 36 18 50 10 Max. Units GHz GHz 10 10 dB dB dB dB dBm dBm dBm * Unless otherwise noted, all measurements performed as downconverter, IF = 100 MHz 5-2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0802 MICROWAVE CORPORATION HMC128 GaAs MMIC DOUBLE-BALANCED MIXER, 1.8 - 5.0 GHz Conversion Gain vs . Temperature @ LO = +15 dBm 0 Isolation @ LO = +15 dBm 0 -10 CONVERSION GAIN (dB) -5 -10 + 25 C + 85 C - 55 C Isolation (dB) -20 -30 -40 -50 RF/IF LO/RF LO/IF -15 -20 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) -60 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 5 MIXERS - CHIP Conversion Gain vs. LO Drive 0 LO and RF Return Loss 0 CONVERSION GAIN (dB) -5 RETURN LOSS (dB) -5 -10 + 9 dBm + 11 dBm + 13 dBm + 15 dBm -10 -15 -15 RF LO -20 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) -20 1 1.5 2 2.5 3 3.5 4 4.5 FREQUENCY (GHz) 5 5.5 6 IF Bandwidth @ LO = +15 dBm 0 Upconverter Performance Conversion Gain vs. LO Drive 0 CONVERSION GAIN (dB) -5 RESPONSE (dB) -5 -10 -10 + 9 dBm + 11 dBm + 13 dBm + 15 dBm -15 IF CONVERSION LOSS IF RETURN LOSS -15 -20 0 1 2 3 FREQUENCY (GHz) 4 5 -20 1 1.5 2 2.5 3 3.5 4 4.5 FREQUENCY (GHz) 5 5.5 6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5-3 MICROWAVE CORPORATION v02.0802 HMC128 GaAs MMIC DOUBLE-BALANCED MIXER, 1.8 - 5.0 GHz Input IP3 vs. LO Drive 30 Input IP3 vs. Temperature @ LO = +15 dBm 30 + 25 C + 85 C - 55 C 25 INPUT IP3 (dBm) INPUT IP3 (dBm) + 11 dBm + 13 dBm + 15 dBm 25 20 20 15 15 5 MIXERS - CHIP 10 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) 10 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) Input IP2 vs LO Drive 80 75 70 INPUT IP2 (dBm) 65 60 55 50 45 40 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) + 11 dBm + 13 dBm + 15 dBm Input IP2 vs. Temperature @ LO = +15 dBm 80 75 70 + 25 C + 85 C - 55 C INPUT IP2 (dBm) 65 60 55 50 45 40 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) Input P1dB vs. Temperature @ LO = +15 dBm 15 14 13 P1dB (dBm) 12 11 10 9 8 7 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 + 25 C + 85 C - 55 C 5-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0802 MICROWAVE CORPORATION HMC128 GaAs MMIC DOUBLE-BALANCED MIXER, 1.8 - 5.0 GHz MxN Spurious @ IF Port nLO mRF 0 1 2 3 4 0 xx 2.8 62.3 74.3 >85 1 5.6 0 58.6 >85 >85 2 30.3 23.3 57.8 74.3 >85 3 11.1 31.5 60.3 65.8 >85 4 34.5 29.1 75.8 74.3 >85 Harmonics of LO nLO Spur @ RF Port LO Freq. (GHz) 1.5 2.0 2.5 3.5 4.5 5.5 1 54 48 47 40 40 38 2 42 41 41 50 60 60 3 54 50 44 52 51 46 4 54 66 76 75 65 63 RF Freq.= 3.5 GHz @ -10 dBm LO Freq.= 3.4 GHz @ +13 dBm All values in dBc below IF power level. Measured as downconverter LO = +13 dBm All values in dBc below input LO level measured at RF port. 5 MIXERS - CHIP 5-5 Absolute Maximum Ratings LO Drive Storage Temperature Operating Temperature +27 dBm -65 to +150 °C -55 to +85 °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0802 MICROWAVE CORPORATION HMC128 GaAs MMIC DOUBLE-BALANCED MIXER, 1.8 - 5.0 GHz Outline Drawing 5 MIXERS - CHIP NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. BOND PADS ARE .004” SQUARE 3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006” EXCEPT AS SHOWN 4. DIE THICKNESS = .004” [.100 MM] 5. BACKSIDE METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD Pad Descriptions Pad Number Function Description Interface Schematic 1 LO This pin is DC coupled and matched to 50 Ohm from 1.8 to 5.0 GHz. 2 IF This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC this pin must not source or sink more than 2mA of current or die nonfunction and possible die failure will result. 3 RF This pin is DC coupled and matched to 50 Ohm from 1.8 to 5.0 GHz. GND The backside of the die must connect to RF ground. 5-6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0802 HMC128 GaAs MMIC DOUBLE-BALANCED MIXER, 1.8 - 5.0 GHz Assembly Diagram 5 MIXERS - CHIP 5-7 Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible