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HMC158

HMC158

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC158 - GaAs MMIC PASSIVE FREQUENCY DOUBLER CHIP, 1.3 - 4.0 GHz INPUT - Hittite Microwave Corporati...

  • 数据手册
  • 价格&库存
HMC158 数据手册
HMC158 v06.0711 GaAs MMIC PASSIVE FREQUENCY DOUBLER CHIP, 1.3 - 4.0 GHz INPUT Features conversion Loss: 15 dB Fo, 3Fo, 4Fo Isolation: 40 dB Input Drive Level: 10 to 20 dBm Die Size: 1.0 x 1.15 x 0.18 mm 2 FREQUEncy MULTIPLIERS - PaSSIvE - cHIP Typical Applications The HMc158 is suitable for: • Wireless Local Loop • LMDS, VSAT, and Point-to-Point Radios • UNII & HiperLAN • Test Equipment Functional Diagram General Description The HMC158 is a miniature frequency doubler in a MMIc die. Suppression of undesired fundamental and higher order harmonics is 40 dB typical with respect to input signal level. The doubler uses the same diode/balun technology used in Hittite MMIC mixers, features small size and requires no DC bias. Electrical Specifications, TA = +25° C, As a Function of Drive Level Input = +10 dBm Parameter Frequency Range, Input Frequency Range, Output conversion Loss FO Isolation (with respect to input level) 3FO Isolation (with respect to input level) 4FO Isolation (with respect to input level) Min. Typ. 1.7 - 4.0 3.4 - 8.0 18 22 37 40 32 Max. Min. Input = +15 dBm Typ. 1.7 - 3.5 3.4 - 7.0 15 45 50 40 18 Max. Min. Input = +20 dBm Typ. 1.3 - 4.0 2.6 - 8.0 15 18 Max. Units GHz GHz dB dB dB dB 2-1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC158 v06.0711 GaAs MMIC PASSIVE FREQUENCY DOUBLER CHIP, 1.3 - 4.0 GHz INPUT Isolation @ +15 dBm Drive Level* Conversion Gain vs. Drive Level CONVERSION GAIN (dB) 2 FREQUEncy MULTIPLIERS - PaSSIvE - cHIP 2-2 *With respect to input level Input Return Loss vs. Drive Level Output Return Loss vs. Drive Level Absolute Maximum Ratings Input Drive Storage Temperature Operating Temperature ESD Sensitivity (HBM) +27 dBm -65 to +150 °c -55 to +85 °c class 1a ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC158 v06.0711 GaAs MMIC PASSIVE FREQUENCY DOUBLER CHIP, 1.3 - 4.0 GHz INPUT Outline Drawing 2 FREQUEncy MULTIPLIERS - PaSSIvE - cHIP Die Packaging Information [1] Standard WP-2 (Waffle Pack) alternate [2] [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] Reference this suffix only when ordering alternate die packaging. NOTES: 1. THREE PADS ON EACH CORNER MUST BE BONDED TO GROUND (12 TOTAL). 2. ALL DIMENSIONS IN INCHES [MILLIMETERS] 3. ALL TOLERANCES ARE 0.001 [0.025] 4. DIE THICKNESS IS 0.007 [0.178] 5. BOND PADS ARE 0.004 [0.100] SQUARE 6. EQUALLY SPACED AT 0.006 [0.150] CENTERS 7. BACKSIDE METALLIZATION: NONE 8. BOND PAD METALLIZATION: GOLD Pad Description Pad number 1 Function RFIn Description Pad is DC coupled and matched to 50 ohms. Pad is DC coupled and matched to 50 ohms. Interface Schematic 2 RFOUT Die Bottom GnD Dc / RF Ground 2-3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC158 v06.0711 GaAs MMIC PASSIVE FREQUENCY DOUBLER CHIP, 1.3 - 4.0 GHz INPUT Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 2 FREQUEncy MULTIPLIERS - PaSSIvE - cHIP 2-4 Mounting Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package. RF bonds should be as short as possible. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC158 价格&库存

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