HMC216MS8

MICROWAVE CORPORATION v01.0801 HMC216MS8 Features IP3 (Input): +25 dBm @ +11 dBm LO LO Range = +3 to +11 dBm Conversion Loss: 8.5 dB LO / RF Isolation: 32 dB GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications The HMC216MS8 is ideal for: • Base Stations • WirelessLAN • PCMCIA • Portable Wireless Functional Diagram General Description The HMC216MS8 is an ultra miniature doublebalanced FET mixer in an 8 lead plastic surface mount package (MSOP). This MMIC mixer is constructed of switched GaAs FETs and novel planar transformer baluns on the chip. In addition to an LO drive of +3 to +13 dBm, a gate voltage of Vgg = -0.9 to -1.6 Vdc is required. The device can be used as an upconverter or downconverter for 1900 or 2400 MHz applications. The consistent MMIC performance will improve system operation and assure regulatory compliance. 12 MIXERS - SMT Electrical Specifications, TA = +25° C, As a Function of LO Drive, Vgg = -1.2 Vdc LO = +11 dBm Parameter Min. Frequency Range, RF & LO Frequency Range, IF Conversion Loss Noise Figure (SSB) LO to RF Isolation LO to IF Isolation IP3 (Input) 1 dB Gain Compression (Input) 27 17 21 8 Typ. 1.3 - 2.5 DC - 0.65 9 9 30 20 25 11 10.5 10.5 27 17 14 5 Max. Min. Typ. 1.6 - 2.3 DC - 0.5 8.5 8.5 32 20 18 10 10 10 27 17 8 3 Max. Min. Typ. 1.7 - 2.0 DC - 0.4 9 9 32 20 12 8 10.5 10.5 Max. GHz GHz dB dB dB dB dBm dBm LO = +7 dBm LO = +3 dBm Units 12 - 54 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC216MS8 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Conversion Loss vs Temperature @ LO = +7 dBm -6 -8 CONVERSION LOSS (dB) -10 ISOLATION (dB) -12 -14 +85 C -16 -18 -20 -22 1 1.5 2 FREQUENCY (GHz) 2.5 3 -50 -60 1 1.5 2 FREQUENCY (GHz) 2.5 3 -20 -30 LO/IF -40 LO/RF -40 C +25 C -10 RF/IF Isolation @ LO = +7 dBm 0 12 MIXERS - SMT Conversion Loss vs. LO Drive 0 Return Loss @ LO = +7 dBm 0 LO CONVERSION LOSS (dB) -5 RETURN LOSS (dB) -5 +11 dBm -10 +5 dBm -15 +3 dBm -20 1 1.5 2 FREQUENCY (GHz) 2.5 3 +7 dBm +9 dBm RF -10 -15 IF -20 -25 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) IF Bandwidth @ LO = +7 dBm 0 P1dB vs. Temperature for LO = +7 dBm, Vgg = -1.2 Vdc 14 12 10 8 +85 C 6 +25 C CONVERSION LOSS (dB) -5 -40 C -10 -15 -20 P1dB (dBm) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 4 2 1.2 -25 IF FREQUENCY (GHz) 1.4 1.6 1.8 2 2.2 2.4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 12 - 55 v01.0801 MICROWAVE CORPORATION HMC216MS8 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. LO Drive and Vgg 30 THIRD ORDER INTERCEPT (dBm) THIRD ORDER INTERCEPT (dBm) Input IP3 vs. Temperature and Vgg for @ LO = +7 dBm 23 22 -40C 21 20 +25C 19 18 17 +85C 16 15 -1.6 25 +11 dBm +9 dBm 20 +7 dBm 15 +5 dBm 12 MIXERS - SMT 10 -1.6 -1.5 -1.3 -1.2 -1.1 -0.9 -0.8 -1.5 -1.3 -1.2 -1.1 -0.9 -0.8 GATE VOLTAGE (V) GATE VOLTAGE (V) Input IP2 vs. Temperature and Vgg for @ LO = +7 dBm 60 SECOND ORDER INTERCEPT (dBm) 55 50 +85C 45 40 +25C 35 30 -40C 25 20 -1.6 -1.5 -1.3 -1.2 -1.1 -0.9 -0.8 GATE VOLTAGE (V) MxN Spurious Outputs nLO mRF 0 1 2 3 4 0 xx 14 45 83 >105 1 -1 0 45 67 >105 2 14 28 59 62 >105 3 24 21 55 59 85 4 40 46 50 77 96 Harmonics of LO LO Freq. (GHz) 1.5 1.7 1.9 2.1 2.3 2.5 nLO Spur at RF Port 1 41 38 34 31 29 32 2 47 47 41 37 38 45 3 61 72 69 72 74 65 4 78 71 72 79 74 74 RF = 1.975 GHz @ -10 dBm LO = 1.8 GHz @ +7 dBm, Vgg = -1.2V All values in dBc below IF power level (-1RF + 1LO). LO = +7 dBm, Vgg = 1.2V Values in dBc below input LO level measured at the RF port. 12 - 56 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0801 MICROWAVE CORPORATION HMC216MS8 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Absolute Maximum Ratings RF / IF Input LO Drive Storage Temperature Operating Temperature +13 dBm +27 dBm -65 to +150 °C -40 to +85 °C 12 MIXERS - SMT NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Outline Drawing For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 12 - 57 MICROWAVE CORPORATION v01.0801 HMC216MS8 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Evaluation Circuit Board 12 MIXERS - SMT List of Material Item J1 - J3 J4, J5 U1 PCB* Description PC Mount SMA RF Connector DC Pin HMC216MS8 Mixer 102035 Evaluation Board * Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. 12 - 58 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC216MS8 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Notes: 12 MIXERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 12 - 59