HMC221A

HMC221A / 221AE v01.0210 GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz Features RohS-compliant Product Low insertion Loss: 0.4 dB Ultra Small Package: SOt26 input iP3: +45 dBm Positive control: 0/+3V @ 3 µA included in the hMc-DK005 Designer’s Kits Typical Applications the hMc221A(e) is ideal for: • iSM Applications • PcMciA wireless cards • cellular Applications Functional Diagram General Description the hMc221A(e) is a low-cost SPDt switch in a 6-lead SOt26 plastic package for use in general switching applications which require very low insertion loss and very small size. this device can control signals from Dc to 3 Ghz and is especially suited for 900 Mhz, 1.8 - 2.2 Ghz, and 2.4 Ghz iSM applications with less than 1 dB loss. the design provides exceptional insertion loss performance, ideal for filter and receiver switching. RF1 and RF2 are reflective shorts when “Off”. the two control voltages require a minimal amount of Dc current and offer compatibility with most cMOS & ttL logic families. See hMc197A(e) for same performance in an alternate SOt26 pin-out. 14 SwitcheS - SPDt - SMt Electrical Specifications, TA = +25° C, Vctl = 0/+3 to +8 Vdc Parameter Frequency Dc - 1.0 Ghz Dc - 2.0 Ghz Dc - 2.5 Ghz Dc - 3.0 Ghz Dc - 1.0 Ghz Dc - 2.0 Ghz Dc - 2.5 Ghz Dc - 3.0 Ghz Dc - 1.0 Ghz Dc - 2.0 Ghz Dc - 2.5 Ghz Dc - 3.0 Ghz 0.5 - 1.0 Ghz 0.5 - 3.0 Ghz 0.5 - 1.0 Ghz 0.5 - 3.0 Ghz Dc - 3.0 Ghz tRiSe, tFALL (10/90% RF) tON, tOFF (50% ctL to 10/90% RF) 3 10 ns ns 24 24 21 14 20 17 16 11 25 23 40 38 Min. typ. 0.4 0.45 0.6 0.8 28 28 25 18 23 22 20 15 30 29 45 43 Max. 0.7 0.8 0.9 1.1 Units dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm insertion Loss isolation Return Loss input Power for 1 dB compression (Vctl = 0/+5V) input third Order intercept (Vctl = 0/+5V) (two-tone input Power = +7 dBm each tone) Switching characteristics 14 - 1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC221A / 221AE v01.0210 GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz Isolation 0 Insertion Loss 0 -0.5 INSERTION LOSS (dB) -10 -1 ISOLATION (dB) -20 -1.5 -30 -2 -2.5 -40 -3 0 0.5 1 1.5 2 2.5 3 -50 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) FREQUENCY (GHz) Return Loss 0 Input 0.1 and 1.0 dB Compression vs. Control Voltage 35 1 dB at 1900 MHz P1dB & P0.1dB (dBm) -10 RETURN LOSS (dB) 30 1 dB at 900 MHz 14 SwitcheS - SPDt - SMt 14 - 2 -20 25 0.1 dB at 900 MHz -30 20 -40 0.1 dB at 1900 MHz -50 0 0.5 1 1.5 2 2.5 3 15 3 4 5 6 7 8 9 FREQUENCY (GHz) CONTROL INPUT (V) Input Third Order Intercept Point vs. Control Voltage 54 Distortion vs. Control Voltage control input (Vdc) +3 +5 +8 third Order intercept (dBm) +7 dBm each tone 900 Mhz 51 51 51 1900 Mhz 48 49 50 52 IP3 (dBm) 50 48 Truth Table 900 MHz 1900 MHz *Control Input Voltage Tolerances are ± 0.2 Vdc. 46 control input* A (Vdc) 0 +3 0 +5 0 +8 B (Vdc) +3 0 +5 0 +8 0 control current ia (µA) -3 3 -5 5 -32 32 ib (µA) 3 -3 5 -5 32 -32 Signal Path State RF to RF1 ON OFF ON OFF ON OFF RF to RF2 OFF ON OFF ON OFF ON 44 2 3 4 5 6 7 8 9 CONTROL INPUT (V) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC221A / 221AE v01.0210 GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz Absolute Maximum Ratings control Voltage Range (A & B) Storage temperature Operating temperature eSD Sensitivity (hBM) -0.2 to +12 Vdc -65 to +150 °c -40 to +85 °c class 1A input Power for 1.0 dB compression (dBm) 24 30 33 Compression vs. Control Voltage carrier at 900 Mhz control input (Vdc) +3 +5 +8 input Power for 0.1 dB compression (dBm) 21 28 32 input Power for 1 dB compression (dBm) 24 30 34 carrier at 1900 Mhz input Power for 0.1 dB compression (dBm) 21 27 31 eLectROStAtic SeNSitiVe DeVice OBSeRVe hANDLiNG PRecAUtiONS caution: Do not operate in 1dB compression at power levels above +31 dBm (Vctl = +5 Vdc) and do not “hot switch” power levels greater than +20 dBm (Vctl = +5Vdc). Dc blocks are required at ports RFc, RF1 and RF2. 14 SwitcheS - SPDt - SMt Outline Drawing NOteS: 1. LeADFRAMe MAteRiAL: cOPPeR ALLOY 2. DiMeNSiONS ARe iN iNcheS [MiLLiMeteRS]. 3. DiMeNSiON DOeS NOt iNcLUDe MOLDFLASh OF 0.15mm PeR SiDe. 4. DiMeNSiON DOeS NOt iNcLUDe MOLDFLASh OF 0.25mm PeR SiDe. 5. ALL GROUND LeADS MUSt Be SOLDeReD tO PcB RF GROUND. Package Information Part Number hMc221A hMc221Ae Package Body Material Low Stress injection Molded Plastic RohS-compliant Low Stress injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking 221A XXXX 221Ae XXXX [2] [1] Max peak reflow temperature of 235 °c [2] Max peak reflow temperature of 260 °c 14 - 3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC221A / 221AE v01.0210 GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz Typical Application Circuit Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use hct series logic to provide a ttL driver interface. 2. control inputs A/B can be driven directly with cMOS logic (hc) with Vdd of 5 to 8 Volts applied to the cMOS logic gates. 3. Dc Blocking capacitors are required for each RF port as shown. capacitor value determines lowest frequency of operation. 4. highest RF signal power capability is achieved with Vdd = +8V and A/B set to 0/+8V. Evaluation Circuit Board 14 SwitcheS - SPDt - SMt List of Materials for Evaluation PCB 101675 [1] item J1 - J3 J4 - J7 c1 - c3 U1 PcB [2] Description PcB Mount SMA RF connector Dc Pin 330 pF capacitor, 0402 Pkg. hMc221A / hMc221Ae SPDt Switch 101659 evaluation PcB [1] Reference this number when ordering complete evaluation PcB [2] circuit Board Material: Rogers 4350 the circuit board used in the application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 Ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. the evaluation circuit board shown above is available from hittite Microwave corporation upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 14 - 4