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HMC226E

HMC226E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC226E - GaAs MMIC 3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC226E 数据手册
HMC226 / 226E v03.0505 GaAs MMIC +3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz Typical Applications The HMC226 / HMC226E is ideal for: • 900 MHz ISM/Cellular • 1900 MHz PCS Features Low Insertion Loss: 0.6 dB Ultra Small Package: SOT26 High Input P1dB: +35 to +38 dBm High Input IP3: +55 to +61 dBm Positive Control: 0/+3V to 0/+8V Included in the HMC-DK005 Designer’s Kit Functional Diagram General Description The HMC226 & HMC226E are low-cost SPDT switches in 6-lead SOT26 packages for use in transmitreceive applications which require very low distortion at high signal power levels. The device can control signals from DC to 2.0 GHz and is especially suited for 450 MHz, 900 MHz, and 1.8 - 2 GHz applications with 0.5 to 0.8 dB loss. The design provides exceptional P1dB and intermodulation performance; a +35 dBm 1dB compression point and +55 dBm third order intercept at +3 volt bias. RF1 and RF2 are reflective opens when “Off”. On-chip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. 10 SWITCHES - SMT Electrical Specifi cations, TA = +25° C, Vctl = 0/+3 Vdc, 50 Ohm System Parameter Frequency DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz 0/5V Control 0/3V Control 0/5V Control 0/3V Control 0.3 - 2.0 GHz 0.3 - 2.0 GHz DC - 2.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 70 140 ns ns 23 17 12 23 21 14 34 31 Min. Typ. 0.5 0.6 0.8 26 20 15 27 25 18 38 35 61 55 Max. 0.8 0.9 1.2 Units dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm Insertion Loss Isolation Return Loss Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power = +26 dBm Each Tone) Switching Characteristics 10 - 54 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC226 / 226E v03.0505 GaAs MMIC +3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz Insertion Loss vs Temperature 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) +25 C +85 C -40 C Isolation 0 -10 ISOLATION (dB) -20 -30 -40 -50 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) 10 SWITCHES - SMT 10 - 55 Return Loss 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) RFC RF1,RF2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC226 / 226E v03.0505 GaAs MMIC +3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz Input 0.1 and 1.0 dB Compression vs. Control Voltage @ 900 MHz 40 INPUT COMPRESSION (dBm) Compression vs. Control Voltage @ 900 MHz Control Input Input Power for 0.1 dB Compression (dBm) 30 33 35 Input Power for 1.0 dB Compression (dBm) 35 38 38.5 35 (Vdc) +3 30 +5 +7 25 0.1 dB Compression 1 dB Compression Caution: Do not operate continuously at power levels >1 dB compression and do not “hot switch” power levels greater than +23dBm (VCTL = +3Vdc). 7 8 20 2 3 4 5 6 Control Voltage (Vdc) 10 SWITCHES - SMT Truth Table *Control Input Voltage Tolerances are ± 0.2 Vdc. Control Input* A (Vdc) 0 +3 0 +5 0 +8 B (Vdc) +3 0 +5 0 +8 0 Control Current Ia (uA) -5 5 -10 10 -45 45 Ib (uA) 5 -5 10 -10 45 -45 Signal Path State RF to RF1 ON OFF ON OFF ON OFF RF to RF2 OFF ON OFF ON OFF ON DC Blocks are required at ports RFC, RF1 and RF2. 10 - 56 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC226 / 226E v03.0505 GaAs MMIC +3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz Absolute Maximum Ratings Max. Input Power (VCTL = 0/+3V) 0.05 GHz 0.5 - 2 GHz +27 dBm +36 dBm -0.2 to +12 Vdc -65 to +150 °C -40 to +85 °C Class 1A Control Voltage Range (A & B) Storage Temperature Operating Temperature ESD Sensitivity (HBM) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 10 SWITCHES - SMT NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC226 HMC226E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H226 XXXX 226E XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 57 HMC226 / 226E v03.0505 GaAs MMIC +3V SOT26 TRANSMIT/ RECEIVE SWITCH, DC - 2.0 GHz Typical Application Circuit 10 SWITCHES - SMT Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS logic gates. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 10 - 58 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC226 / 226E v03.0505 GaAs MMIC +3V SOT26 TRANSMIT/ RECEIVE SWITCH, DC - 2.0 GHz Evaluation Circuit Board 10 SWITCHES - SMT List of Materials for Evaluation PBC 101675 [1] Item J1 - J3 J4 - J7 C1 - C3 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 330 pF capacitor, 0402 Pkg. HMC226 / HMC226E T/R Switch 101659 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 59
HMC226E
物料型号: - HMC226 和 HMC226E 是两种型号,分别是 GaAs MMIC +3V SOT26 TRANSMIT/RECEIVE SWITCH,适用于DC至2GHz的频率范围。

器件简介: - HMC226 和 HMC226E 是低成本的SPDT开关,采用6引脚SOT26封装,适用于需要在高信号功率水平下控制信号的收发应用。这些设备特别适用于450MHz、900MHz和1.8-2GHz的应用,损耗在0.5至0.8dB之间。设计提供了出色的P1dB和互调性能,3伏偏置下1dB压缩点为+35dBm,三阶截取点为+55dBm。

引脚分配: - 文档中提供了真值表,描述了控制输入A/B的电压和对应的信号路径状态。例如,当A为+3V,B为0V时,RF1导通而RF2截止。

参数特性: - 插入损耗:在不同频率下分别为0.5、0.6和0.8dB。 - 隔离度:在不同频率下分别为23、17和12dB。 - 回波损耗:在不同频率下分别为23、21和14dB。 - 输入功率达到1dB压缩:在0/5V控制和0/3V控制下分别为34、31dBm和38、35dBm。 - 输入三阶截取点:在0/5V控制和0/3V控制下分别为61、55dBm。

功能详解: - HMC226 和 HMC226E 设计用于单向供应操作,非常低的直流电流,控制输入兼容CMOS和大多数TTL逻辑系列。RF1和RF2在“关”时是反射性开路。

应用信息: - HMC226 和 HMC226E 非常适合900MHz ISM/Cellular和1900MHz PCS应用。

封装信息: - HMC226采用低应力注塑成型塑料,Sn/Pb焊料,MSL1等级,封装标记为H226 xXXX。 - HMC226E采用符合RoHS的低应力注塑成型塑料,100%亚光Sn,MSL1等级,封装标记为226E xXXX。
HMC226E 价格&库存

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