HMC232G8_08

HMC232G8 v01.1105 GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz Features Isolation: 48 dB @ 2 GHz 34 dB @ 6 GHz Insertion Loss: 1.5 dB Typical @ 4 GHz Non-Reflective Design Hermetic Surface Mount Package Typical Applications The HMC232G8 is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military Radios, Radar & ECM • Space Systems • Test Instrumentation Functional Diagram General Description The HMC232G8 is a broadband high isolation nonreflective GaAs MESFET SPDT switch in a hermetic surface mount package. Covering DC to 6 GHz, the switch features >48 dB isolation up to 2 GHz and >34 dB isolation up to 6 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply. 10 SWITCHES - SMT Parameter Insertion Loss Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System Frequency DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz “On State” DC - 6.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz 0.5 - 6.0 GHz 0.5 - 6.0 GHz 22 43 33 29 Min. Typ. 1.4 1.5 1.8 48 38 34 16 11 9 8 27 46 Max. 1.7 1.8 2.2 Units dB dB dB dB dB dB dB dB dB dB dBm dBm Isolation Return Loss Return Loss RF1, RF2 “Off State” Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 6.0 GHz 3 6 ns ns 10 - 78 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232G8 v01.1105 GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz Insertion Loss 0 Isolation 0 -10 INSERTION LOSS (dB) -1 ISOLATION (dB) -20 -30 -40 -50 -60 -70 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 FREQUENCY (GHz) FREQUENCY (GHz) RF1 RF2 -2 -3 + 25C + 85C - 40C -4 -5 10 SWITCHES - SMT 10 - 79 Return Loss 0 RFC RF1, RF2 ON RF1, RF2 OFF 0.1 and 1 dB Input Compression Point 35 -5 RETURN LOSS (dB) -10 INPUIT P1dB (dBm) 30 25 -15 20 1 dB Compression Point 0.1 dB Compression Point -20 -25 0 1 2 3 4 5 6 7 FREQUENCY (GHz) 15 0 1 2 3 4 5 6 7 FREQUENCY (GHz) Input Third Order Intercept Point 60 55 INPUIT IP3 (dBm) 50 45 40 35 30 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 + 25C + 85C - 40C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232G8 v01.1105 GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz Absolute Maximum Ratings RF Input Power (Vctl= -5V) (0.5 - 6 GHz) Control Voltage Range (A & B) Channel Temperature Thermal Resistance (RTH) (junction to lead) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +30 dBm (@ +50 °C) +1.0V to -7.5 Vdc 150 °C 94 °C/W -65 to +150 °C -40 to +85 °C Class 1A Control Voltages State Low High Bias Condition 0 to -0.2V @ 10 uA Max. -5V @ 10 uA Typ. to -7V @ 45 uA Typ. Truth Table Control Input A High Low B Low High Signal Path State RFC to RF1 ON OFF RFC to RF2 OFF ON 10 SWITCHES - SMT ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Caution: Do not “Hot Switch” power levels greater than +27 dBm (Vctl = 0/-5 Vdc). Outline Drawing NOTES: 1. PACKAGE MATERIAL: ALUMINA LOADED BOROSILICATE GLASS. 2. LEADS, BASE, COVER MATERIAL: KOVAR™ (#7052 CORNING). 3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER ELECTROLYTIC NICKEL 50 MICROINCHES MIN. 4. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. TOLERANCES: .±005 [0.13] UNLESS OTHERWISE SPECIFIED. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 10 - 80 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232G8 v01.1105 GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz Suggested Driver Circuit 10 SWITCHES - SMT 10 - 81 Pin Descriptions Pin Number 1, 4, 7 Function RF1, RF2, RFC Description This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. Package bottom must also be connected to PCB RF ground. Interface Schematic 2, 3, 8 GND 5 A See truth table and control voltage table. 6 B See truth table and control voltage table. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232G8 v01.1105 GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz Evaluation PCB 10 SWITCHES - SMT List of Materials for Evaluation PBC 107261 [1] Item J1 - J3 J4 - J6 R1, R2 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 100 Ohm Resistor, 0603 Pkg. HMC232G8 SPDT Switch 107112 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. 10 - 82 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232G8 v01.1105 GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz Notes: 10 SWITCHES - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 83