HMC232LP4_06

HMC232LP4_06

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC232LP4_06 - GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 12.0 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC232LP4_06 数据手册
HMC232LP4 / 232LP4E v03.0805 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 12.0 GHz Features Isolation: 60 dB @ 3 GHz 52 dB @ 6 GHz +27 dBm Input P1dB Insertion Loss: 1.5 dB Typical @ 6 GHz Non-Reflective Design 4x4 mm QFN SMT Package Included in the HMC-DK005 Designer’s Kit Designer’s Kit Available Typical Applications The HMC232LP4 / HMC232LP4E is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military Radios, Radar & ECM 8 SWITCHES - SMT • Test Instrumentation Functional Diagram General Description The HMC232LP4 & HMC232LP4E are broadband high isolation non-reflective GaAs MESFET SPDT switches in low cost leadless QFN surface mount plastic packages. Covering DC to 12 GHz, the switch features >60 dB isolation up to 3 GHz and >42 dB isolation up to 12 GHz. Input P1dB compression is +27 dBm typical, while input IP3 is +50 dBm. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply. Electrical Specifications, TA = +25° C, With 0/-5V Control, 50 Ohm System Parameter Frequency DC - 3.0 GHz DC - 6.0 GHz DC - 9.0 GHz DC - 12.0 GHz DC - 3.0 GHz DC - 6.0 GHz DC - 9.0 GHz DC - 12.0 GHz “On State” DC - 6.0 GHz DC - 9.0 GHz DC - 12.0 GHz DC - 12.0 GHz 0.5 - 12.0 GHz 0.5 - 12.0 GHz DC - 12.0 GHz 3 6 ns ns 24 45 55 47 40 37 Min. Typ. 1.4 1.5 2.0 2.7 60 52 45 42 18 16 11 14 27 50 Max. 1.7 1.8 2.3 3.1 Units dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm Insertion Loss Isolation Return Loss Return Loss RF1, RF2 Input Power for 1 dB Compression “Off State” Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 8 - 78 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232LP4 / 232LP4E v03.0805 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 12.0 GHz Insertion Loss 0 -1 INSERTION LOSS (dB) -2 -3 -4 -5 -6 0 1 2 3 4 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz) +25 C +85 C -40 C Isolation -10 -20 -30 -40 -50 -60 -70 -80 0 1 2 3 4 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz) RF1 RF2 ISOLATION (dB) 8 SWITCHES - SMT 8 - 79 Return Loss 0 RFC RF1, RF2 ON RF1, RF2 OFF 0.1 and 1 dB Input Compression Point 30 -5 RETURN LOSS (dB) -10 INPUIT P1dB (dBm) 25 20 -15 15 -20 0.1 dB Compression Point 1 dB Compression Point -25 0 1 2 3 4 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz) 10 0 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) 10 11 12 13 Input Third Order Intercept Point 60 55 INPUIT IP3 (dBm) 50 45 40 35 30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 FREQUENCY (GHz) +25 C +85 C -40 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232LP4 / 232LP4E v03.0805 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 12.0 GHz Absolute Maximum Ratings RF Input Power (Vctl= -5V) (0.5 - 12 GHz) Control Voltage Range (A & B) Channel Temperature Thermal Resistance (RTH) (junction to lead) +30 dBm (@ +50 °C) +1.0V to -7.5 Vdc 150 °C 94 °C/W -65 to +150 °C -40 to +85 °C Class 1A Control Voltages State Low High Bias Condition 0 to -0.2V @ 10 uA Max. -5V @ 10 uA Typ. to -7V @ 45 uA Typ. (±0.5 Vdc) Truth Table Control Input A High Low B Low High Signal Path State RFC to RF1 ON OFF RFC to RF2 OFF ON 8 SWITCHES - SMT Storage Temperature Operating Temperature ESD Sensitivity (HBM) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Caution: Do not “Hot Switch” power levels greater than +27 dBm (Vctl = 0/-5 Vdc). Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC232LP4 HMC232LP4E Package Body Material Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H232 XXXX H232 XXXX RoHS-compliant Low Stress Injection Molded Plastic [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 8 - 80 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232LP4 / 232LP4E v03.0805 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 12.0 GHz Suggested Driver Circuit 8 SWITCHES - SMT 8 - 81 Pin Descriptions Pin Number 1, 2, 6, 7, 11, 12, 13, 14, 17, 18, 19, 20, 24 3, 5, 8, 10, 21, 23 Function Description This pin should be connected to PCB RF ground to maximize isolation. Interface Schematic N/C GND Package bottom must also be connected to PCB RF ground. This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. 4, 9, 22 RFC, RF1, RF2 15 B See truth table and control voltage table. 16 A See truth table and control voltage table. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232LP4 / 232LP4E v03.0805 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 12.0 GHz Evaluation PCB 8 SWITCHES - SMT List of Materials for Evaluation PCB 107723 [1] Item J1 - J3 J4 - J6 C1, C2 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 100 pF, 0603 Pkg. HMC232LP4 / HMC232LP4E SPDT Switch 107602 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. 8 - 82 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232LP4 / 232LP4E v03.0805 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 12.0 GHz Notes: 8 SWITCHES - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 83
HMC232LP4_06
1. 物料型号: - HMC232LP4:低应力注塑成型塑料封装,Sn/Pb焊料,MSL1等级。 - HMC232LP4E:符合RoHS标准的低应力注塑成型塑料封装,100%亚光Sn焊料,MSL1等级。

2. 器件简介: - HMC232LP4/HMC232LP4E是宽带高隔离非反射型GaAs MESFET SPDT开关,覆盖DC至12GHz频段,提供超过60dB的隔离度直到3GHz,以及超过42dB的隔离度直到12GHz。

3. 引脚分配: - 引脚1、2、6、7、11、12、13、14、17、18、19、20、24:N/C(应连接到PCB RF地以最大化隔离)。 - 引脚3、5、8、10、21、23:GND(封装底部也应连接到PCB RF地)。 - 引脚4、9、22:RFC、RF1、RF2(DC耦合,匹配到50欧姆。如果RF线电位不为0V,需要阻塞电容器)。 - 引脚15:B(见真值表和控制电压表)。 - 引脚16:A(见真值表和控制电压表)。

4. 参数特性: - 隔离度:3GHz时60dB,6GHz时52dB,9GHz时45dB,12GHz时42dB。 - 插入损耗:6GHz时典型值为1.5dB。 - 输入1dB压缩点:+27dBm。 - 输入三阶截取点:+50dBm。

5. 功能详解: - 该开关设计为非反射型,使用互补负控制电压逻辑线(-5/0V),无需偏置供电。

6. 应用信息: - 适用于电信基础设施、微波无线电&VSAT、军事无线电、雷达&ECM、测试仪器等。

7. 封装信息: - 4x4 mm QFN表面贴装封装。 - HMC232LP4:低应力注塑成型塑料,Sn/Pb焊料,MSL1等级。 - HMC232LP4E:符合RoHS标准的低应力注塑成型塑料,100%亚光Sn焊料,MSL1等级。
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