HMC232_09

HMC232 v03.1203 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15 GHz Typical Applications Broadband switch for DC - 15 GHz applications: • Fiber Optics • Microwave Radio • Military & Space Features High Isolation: >50 dB @ 10 GHz Low Insertion Loss: 1.4 dB @ 6 GHz Non-Reflective Design Die Size: 2.05 x 1.04 x 0.1 mm Direct Replacement for HMC132 4 SWITCHES - CHIP • Test Equipment • VSAT Functional Diagram General Description The HMC232 is a broadband non-reflective GaAs MESFET SPDT MMIC chip. Covering DC to 15 GHz, the switch features over 55 dB isolation at lower frequencies and over 45 dB at higher frequencies due to the implementation of on-chip via hole structures. The switch operates using two negative control voltage logic lines (A&B) of -5/0V and requires no Vee. Alternate A & B control pads are provided to ease MIC implementation. All data shown is tested with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.5 mm (20 mils) length. This product is a form, fit & functional replacement for the HMC132. Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System Parameter Insertion Loss Frequency DC - 6 GHz DC - 10 GHz DC - 15 GHz DC - 6 GHz DC - 10 GHz DC - 15 GHz “On State” DC - 6 GHz DC - 15 GHz DC - 6 GHz DC - 15 GHz 0.5 - 15 GHz 0.5 - 15 GHz 21 44 50 45 40 Min. Typ. 1.4 2.2 3.1 55 50 45 18 12 14 13 26 49 3 5 Max. 1.7 2.5 3.4 Units dB db dB dB dB dB dB dB dB dB dBm dBm ns ns Isolation Return Loss Return Loss RF1, RF2 Input Power for 1 dB Compression “Off State” Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 15 GHz 4-2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232 v03.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15 GHz Insertion Loss vs. Temperature 0 -1 INSERTION LOSS (dB) -2 -3 -4 -5 -6 0 2 4 6 8 10 FREQUENCY (GHz) 12 14 16 +25 C +85 C -55 C Isolation 0 -15 ISOLATION (dB) -30 -45 -60 -75 -90 0 2 4 6 8 10 FREQUENCY (GHz) 12 14 16 RF1 RF2 4 SWITCHES - CHIP 4-3 Return Loss 0 RFC RF1, RF2 ON RF1, RF2 OFF 0.1 and 1 dB Input Compression Point 30 -5 RETURN LOSS (dB) 25 P1dB (dBm) -10 20 0.1 dB Compression Point 1 dB Compression Point -15 -20 15 -25 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 10 0 2 4 6 8 10 FREQUENCY (GHz) 12 14 16 Input Third Order Intercept Point 60 55 50 IP3 (dBm) 45 40 35 30 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) +25 C +85 C -55 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232 v03.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15 GHz Control Voltages State Low Bias Condition 0 to -0.2V @ 10 uA Max. -5V @ 10 uA Typ. to -7V @ 45 uA Typ. Absolute Maximum Ratings RF Input Power (Vctl = -5V) (0.5 - 15 GHz) Control Voltage Range (A & B) Channel Temperature Thermal Resistance +30 dBm (@ +50 °C) +1 V to -7.5 Vdc 150 °C 92 °C/W -65 to +150 °C -55 to +85 °C Class 1A High 4 SWITCHES - CHIP Storage Temperature Operating Temperature ESD Sensitivity (HBM) Truth Table Control Input A High B Low High Signal Path State RFC to RF1 ON OFF RFC to RF2 OFF ON ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Low Caution: Do not “Hot Switch” power levels greater than +26 dBm (Vctl = 0/-5 Vdc). Outline Drawing NOTES: Die Packaging Information Standard WP-17 (Waffle Pack) [2] [1] 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. BOND PADS ARE 0.004” SQUARE 3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006” 4. BACKSIDE METALIZATION: GOLD 5. BOND PAD METALIZATION: GOLD 6. BACKSIDE OF DIE IS GROUND 7. DIE THICKNESS IS .004” 8. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS Alternate [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 4-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232 v03.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15 GHz Suggested Driver Circuit 4 SWITCHES - CHIP Pad Descriptions Pad Number Function Description See truth table and control voltage table. Alternate A & B control pads provided. Interface Schematic 2, 5, 8, 10 A 3, 6, 9 B See truth table and control voltage table. Alternate A & B control pads provided. 1, 4, 7 RF1, RFC, RF2 This pad is DC coupled and matched to 50 Ohms. Blocking capacitors are required if the RF line potential is not equal to 0V. GND Die bottom must be connected to RF ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4-5 HMC232 v03.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15 GHz Assembly Diagram 4 SWITCHES - CHIP 4-6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC232 v03.0907 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 4 SWITCHES - CHIP 4-7 Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible