HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz
Features
Isolation: 52 dB @ 2 GHz 40 dB @ 6 GHz Insertion Loss: 1.6 dB Typical @ 6 GHz Non-Reflective Design Surface Mount Ceramic Package
Typical Applications
The HMC234C8 is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military Radios, Radar & ECM • Test Instrumentation
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SWITCHES - SMT
Functional Diagram
General Description
The HMC234C8 is a broadband high isolation nonreflective GaAs MESFET SPDT switch in a nonhermetic surface mount ceramic package. Covering DC to 8 GHz, the switch features >52 dB isolation up to 2 GHz and >38 dB isolation up to 8 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply. This product is an excellent pin-for-pin replacement to the SMDI SSW124.
Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System
Parameter Insertion Loss Frequency DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz “On State” DC - 2.0 GHz DC - 8.0 GHz DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz 0.5 - 8.0 GHz 0.5 - 8.0 GHz 22 40 47 35 33 Min. Typ. 1.4 1.6 2.1 52 40 38 15 12 14 9 6 26 46 Max. 1.7 1.9 2.4 Units dB dB dB dB dB dB dB dB dB dB dB dBm dBm
Isolation
Return Loss
Return Loss RF1, RF2
“Off State”
Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz
3 5
ns ns
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz
Insertion Loss
0
Isolation
0 -10
INSERTION LOSS (dB)
-1 -20 ISOLATION (dB) -2 -30 -40 -50 -60 -70 -80 0 1 2 3 4 5 6 7 8 0 1 2 FREQUENCY (GHz) 3 4 5 FREQUENCY (GHz) 6 7 8
RF1 RF2
-3
+ 25C + 85C - 40C
-4
-5
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SWITCHES - SMT
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Return Loss
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 8
RFC RF1, RF2 ON RF1, RF2 OFF
0.1 and 1 dB Input Compression Point
35
30 INPUT P1dB (dBm)
25
20
1 dB Compression Point 0.1 dB Compression Point
15 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 8
Input Third Order Intercept Point
60 55 INPUT IP3 (dBm) 50 45 40 35 30 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 8
+ 25C + 85C - 40C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz
Absolute Maximum Ratings
RF Input Power (Vctl= -5V) (0.5 - 8 GHz) Control Voltage Range (A & B) Channel Temperature Thermal Resistance Storage Temperature Operating Temperature ESD Sensitivity (HBM) +30 dBm (@ +50 °C) +1.0V to -7.5 Vdc 150 °C 94 °C/W -65 to +150 °C -40 to +85 °C Class 1A
Control Voltages
State Low High Bias Condition 0 to -0.2V @ 10 uA Max. -5V @ 10 uA Typ. to -7V @ 45 uA Typ.
Truth Table
Control Input A High Low B Low High Signal Path State RFC to RF1 ON OFF RFC to RF2 OFF ON
10
SWITCHES - SMT
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Caution: Do not “Hot Switch” power levels greater than +26 dBm (Vctl = 0/-5 Vdc).
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: WHITE ALUMINA 92% 2. LEAD, PACKAGE BOTTOM MATERIAL: COPPER 3. PLATING: ELECTROLYTIC GOLD 100-200 MICROINCHES, OVER ELECTROLYTIC NICKEL 100-250 MICROINCHES. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. PACKAGE LENGTH AND WIDTH DIMENSIONS DO NOT INCLUDE LID SEAL PROTRUSION .005 PER SIDE. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz
Suggested Driver Circuit
10
SWITCHES - SMT
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Pin Descriptions
Pin Number 1, 3, 4 Function GND Description Package bottom must also be connected to PCB RF ground. This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. Interface Schematic
2, 5, 8
RFC, RF1, RF2
6
B
See truth table and control voltage table.
7
A
See truth table and control voltage table.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz
Evaluation PCB
10
SWITCHES - SMT
List of Materials for Evaluation PCB 105771 [1]
Item J1 - J3 J4 - J6 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin HMC234C8 SPDT Switch 105707 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350
The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz
Notes:
10
SWITCHES - SMT
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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