HMC260_09

HMC260 v04.1007 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Features Passive: No DC Bias Required Input IP3: +20 dBm LO/RF Isolation: 39 dB Small Size: 1.0 x 0.55 x 0.1 mm Typical Applications The HMC260 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios 4 MIXERS - DOUBLE-BALANCED - CHIP Functional Diagram General Description The HMC260 is a passive double balanced mixer that can be used as an upconverter or downconverter between 14 and 26 GHz. The miniature monolithic mixer (MMIC) requires no external components or matching circuitry. The HMC260 provides excellent LO to RF and LO to IF suppression due to optimized balun structures. The mixer operates with LO drive levels above +9 dBm. Measurements were made with the chip mounted and bonded into in a 50 ohm test fixture. Data includes the parasitic effects of wire bond assembly. Connections were made with a 3 mil ribbon bond with minimal length (110 4 xx xx 95 94 >110 14 P1dB (dBm) 0 1 2 12 10 + 25 C + 85 C - 55 C 3 4 8 RF = 21 GHz @ -10 dBm LO = 22 GHz @ +13 dBm All values in dBc below the IF output power level. 23 24 25 26 6 14 15 16 17 18 19 20 21 22 FREQUENCY (GHz) * Two-tone input power = -5 dBm each tone, 1 MHz spacing. 4 - 38 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC260 v04.1007 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Absolute Maximum Ratings RF / IF Input LO Drive Storage Temperature Operating Temperature IF DC Current ESD Sensitivity (HBM) +15 dBm +27 dBm -65 to +150 °C -55 to +85 °C ±4 mA Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 4 Outline Drawing Die Packaging Information [1] Standard GP-5 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004”. 3. TYPICAL BOND PAD IS .004” SQUARE. 4. BOND PAD SPACING CENTER TO CENTER IS .006”. 5. BACKSIDE METALLIZATION: GOLD. 6. BOND PAD METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 39 MIXERS - DOUBLE-BALANCED - CHIP HMC260 v04.1007 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Pad Descriptions Pad Number Function Description Interface Schematic 1 LO This pin is DC coupled and matched to 50 Ohms. 4 MIXERS - DOUBLE-BALANCED - CHIP 2 RF This pin is DC coupled and matched to 50 Ohms. 3 IF This pin is DC coupled. For applications not requiring operation to DC this port should be DC blocked externally using a series capacitor. Choose value of capacitor to pass IF frequency desired. For operation to DC, this pin must not sink/source more than 40 mA of current or failure may result. Die Bottom GND This pin must be connected to RF ground. 4 - 40 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC260 v04.1007 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length