HMC261

v01.0500 MICROWAVE CORPORATION HMC261 Features Stable Gain vs. Temperature: 14dB ± 1.5dB High Reverse Isolation: 40 ~ 50 dB P1dB Output Power: +12 dBm Small Size: 1.3mm x 1.7mm GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz Typical Applications The HMC261 is ideal for: • MMW Point-to-Point Radios • LMDS 1 AMPLIFIERS - CHIP • VSAT • SATCOM Functional Diagram General Description The HMC261 chip is a GaAs MMIC distributed amplifier which covers the frequency range of 20 to 40 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.21 mm2) size. The chip utilizes a GaAs PHEMT process, operating from a single bias supply of + 3 to +4V with a P1dB output power of +12 dBm. All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm ( ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 1 AMPLIFIERS - CHIP 1-7 Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC Bias) or ribbon bond (RF ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible