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HMC263LP4E

HMC263LP4E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC263LP4E - GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
HMC263LP4E 数据手册
HMC263LP4E v01.0709 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC263LP4E is ideal for: • Millimeterwave Point-to-Point Radios • LMDS • VSAT • SATCOM Features Low Noise Figure: 2.2 dB High Gain: 20 dB Single Positive Supply: +3V or +5V DC Blocked RF I/Os No External Matching 24 Lead 4x4mm QFN Package: 16mm2 Functional Diagram General Description The HMC263LP4E is a GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 24 to 36 GHz and is housed in a leadless plastic SMT package. The HMC263LP4E utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3V @ 58 mA with a noise figure of 2.2 dB. The HMC263LP4E may be used in conjunction with HMC264LC3B or HMC265LM3 mixers to realize a millimeterwave system receiver. The RF I/Os are DC blocked and matched to 50 Ohms requiring no external components. Electrical Specifi cations, TA = +25° C, Vdd = +3V Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (@ Vdd = +3.0V) 19 Min. Typ. 24 - 27 21 0.03 2.0 12 10 6 9 16 58 77 3.0 27 17 Max. Min. Typ. 27 - 32 19 0.03 2.2 9 9 8 11 18 58 77 3.0 23 15 Max. Min. Typ. 32 - 36 17 0.03 2.5 11 9 9 12 20 58 77 4.0 20 Max. Units GHz dB dB/°C dB dB dB dBm dBm dBm mA 8-2 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC263LP4E v01.0709 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz Gain vs. Temperature @ Vdd = +3V 26 Gain vs. Temperature @ Vdd = +5V 26 8 LOW NOISE AMPLIFIERS - SMT 8-3 22 GAIN (dB) GAIN (dB) +25 C +85 C - 40 C 22 18 18 14 14 +25 C +85 C - 40 C 10 18 22 26 30 34 38 FREQUENCY (GHz) 10 18 22 26 30 34 38 FREQUENCY (GHz) Input Return Loss @ Vdd = +3V 0 +25 C +85 C - 40 C Input Return Loss @ Vdd = +5V 0 +25 C +85 C - 40 C RETURN LOSS (dB) -10 RETURN LOSS (dB) 34 38 -5 -5 -10 -15 -15 -20 18 22 26 30 FREQUENCY (GHz) -20 18 22 26 30 34 38 FREQUENCY (GHz) Output Return Loss @ Vdd = +3V 0 Output Return Loss @ Vdd = +5V 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 +25 C +85 C - 40 C -5 +25 C +85 C - 40 C -10 -15 -15 -20 18 22 26 30 34 38 FREQUENCY (GHz) -20 18 22 26 30 34 38 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC263LP4E v01.0709 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz Noise Figure vs. Temperature @ Vdd = +5V 8 8 LOW NOISE AMPLIFIERS - SMT Noise Figure vs. Temperature @ Vdd = +3V 8 6 NF (dB) +25 C +85 C - 40 C 6 NF (dB) +25 C +85 C - 40 C 4 4 2 2 0 18 22 26 30 34 38 FREQUENCY (GHz) 0 18 22 26 30 34 38 FREQUENCY (GHz) Isolation @ Vdd = +3V 0 Isolation @ Vdd = +5V 0 -20 ISOLATION (dB) -40 ISOLATION (dB) +25 C +85 C - 40 C -20 +25 C +85 C - 40 C -40 -60 -60 -80 18 22 26 30 34 38 FREQUENCY (GHz) -80 18 22 26 30 34 38 FREQUENCY (GHz) Output P1dB @ Vdd = +3V 16 Output P1dB @ Vdd = +5V 16 12 P1dB (dBm) P1dB (dBm) 12 8 8 4 +25 C +85 C - 40 C 4 +25 C +85 C - 40 C 0 18 22 26 30 34 38 FREQUENCY (GHz) 0 18 22 26 30 34 38 FREQUENCY (GHz) 8-4 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC263LP4E v01.0709 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz Psat @ Vdd = +3V 18 Psat @ Vdd = +5V 18 8 LOW NOISE AMPLIFIERS - SMT 8-5 14 Psat (dBm) Psat (dBm) 14 10 10 +25 C +85 C - 40 C 6 +25 C +85 C - 40 C 6 2 18 22 26 30 34 38 FREQUENCY (GHz) 2 18 22 26 30 34 38 FREQUENCY (GHz) Output IP3 @ Vdd = +3V 25 Output IP3 @ Vdd = +5V 25 20 IP3 (dBm) IP3 (dBm) +25 C +85 C - 40 C 20 15 15 10 10 +25 C +85 C - 40 C 5 18 22 26 30 34 38 FREQUENCY (GHz) 5 18 22 26 30 34 38 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC263LP4E v01.0709 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz 8 LOW NOISE AMPLIFIERS - SMT Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2) RF Input Power (RFIN)(Vdd = +3 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 7.7 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc -5 dBm 175 °C 0.7 W 130 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC263LP4E Package Body Material RoHS-compliant Low Stress Injection Molded Plastic Lead Finish 100% matte Sn MSL Rating MSL3 [2] Package Marking [1] H263 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C 8-6 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC263LP4E v01.0709 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz Pin Description Pin Number 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 Function Description Package bottom has exposed metal paddle that must be connected to RF/DC ground. This pin is AC coupled and matched to 50 Ohm. Not connected. This pin is AC coupled and matched to 50 Ohm. Interface Schematic 8 GND 3 8 - 11, 21, 23 16 RFIN N/C RFOUT 22, 20 Vdd1, Vdd2 Power supply for the 4-stage amplifier. See application circuit for required external components. Application Circuit F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8-7 LOW NOISE AMPLIFIERS - SMT HMC263LP4E v01.0709 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz 8 LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 123965 [1] Item J1, J2 J3 - J5 C1, C2 C3, C4 C5, C6 U1 PCB [2] Description PCB Mount K Connector DC Pin 100 pF Capacitor, 0402 Pkg. 10 nF Capacitor, 0603 Pkg. 4.7 μF Capacitor, Tantalum HMC263LP4E 123963 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25 FR The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. 8-8 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC263LP4E v01.0709 GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz Notes: 8 LOW NOISE AMPLIFIERS - SMT F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8-9
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