HMC268LM1

MICROWAVE CORPORATION HMC268LM1 V01.0900 SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz FEBRUARY 2001 Features SMT mmWAVE PACKAGE General Description The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier (LNA) in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match, preserving MMIC chip performance. Utilizing a GaAs PHEMT process the device offers 2.6 dB noise figure, 15 dB gain and +13 dBm output power from a bias supply of +4V @ 45 mA. The packaged LNA enables economical PCB SMT assembly for millimeterwave point-to-point radios, LMDS, and SATCOM applications. As an alternative to chip-and-wire hybrid assemblies the HMC268LM1 eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer. All data is with the non-hermetic, epoxy sealed LM1 packaged LNA device mounted in a 50 ohm test fixture. 1 AMPLIFIERS EXCELLENT NOISE FIGURE : 15 dB GAIN 2.6 dB P1 dB OUTPUT POWER: +13 dBm SMT Guaranteed Performance, Parameter Frequency Range** Gain Noise Figure Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Voltage (Vdd) Supply Voltage (Vgg1 &Vgg2) Supply Current (Idd) Vdd = +4V*, -55 to +85 deg C Typ. 20 - 26 11 14 2.5 8 12 26 7 13 13 33 11 16 22 4.0 -0.15 45 4.25 0.0 50 23 9 14 17 3.75 -2.0 17 3.2 13 Max. Min. Typ. 26 - 30 15 2.6 7 8 28 13 17 22 4.0 -0.15 45 4.25 0.0 50 23 9 15 15 3.75 -2.0 18 3.4 12 Max. Min. Typ. 30 - 32 15 2.8 7 7 28 13 18 21 4.0 -0.15 45 4.25 0.0 50 18 3.8 Max. Units GHz dB dB dB dB dB dBm dBm dBm Vdc Vdc mA Min. 3.75 -2.0 * Vdd = +4V, adjust Vgg1 & Vgg2 between -2.0 to 0.0 Vdc to achieve Idd = 45 mA. ** Acceptable gain and NF peformance is achievable down to 17 GHz. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 28 HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz V01.0900 FEBRUARY 2001 Broadband Gain and Return Loss 20 15 10 RE S P O NS E (dB ) 5 0 -5 -10 -15 -20 -25 10 15 20 25 30 35 S21 S11 S22 Gain 20 15 GA IN (dB ) 1 AMPLIFIERS 15 20 25 FR E QUE N C Y (G Hz) 30 35 20 25 FR E QUE N C Y (G Hz) 30 35 15 20 25 FR E QUE N C Y (G Hz) 30 35 10 5 0 Isolation 0 Input Return Loss 0 IN P U T R ETUR N LO S S (dB ) REV E RS E IS O L A TIO N (dB ) -10 -5 -20 -10 -30 -15 -40 -50 15 20 25 FR E QUE N C Y (G Hz) 30 35 -20 15 Noise Figure 5 +85 C Output Return Loss 0 O UTP U T R ETU R N L OS S (dB ) 4 NOISE FIGURE (dB) -5 3 -10 2 +25 C 1 -40 C -15 0 20 22 24 26 28 30 32 34 FREQUENCY (GHz) -20 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 29 SMT FR E QUE N C Y (G Hz) HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz FEBRUARY 2001 V01.0900 Output P1dB vs. Temperature 20 Output IP3 vs. Temperature 30 THIRD ORDER INTERCEPT (dBm) -40C 25 1 P1dB OUTPUT (dBm) 18 16 14 12 10 8 6 4 2 +85C -40C +25C AMPLIFIERS 20 +25C 15 +85C 10 SMT 0 20 22 24 26 28 30 32 FREQUENCY (GHz) 20 22 24 26 28 30 32 FREQUENCY (GHz) Psat vs. Temperature 20 18 16 14 Psat (dBm) 12 10 8 6 4 2 0 20 22 24 26 28 30 32 FREQUENCY (GHz) +85C -40C +25C 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 30 HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz V01.0900 FEBRUARY 2001 Functional Diagram Absolute Maximum Ratings Supply Voltage (Vdd) Supply Current (Idd) Gate Bias Voltage (Vgg1 & 2) DC Gate Current (Igg1 & 2) Input Power (RFin) (Vdd = +4V, RF power applied