HMC268LM1_01

MICROWAVE CORPORATION v03.1201 HMC268LM1 SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz Features SMT mmWave Package Excellent Noise Figure: 2.6 dB 15 dB Gain P1dB Output Power: +13 dBm 1 AMPLIFIERS - SMT Typical Applications The HMC268LM1 LNA enables economical PCB SMT assembly for: • Millimeterwave Point-to-Point Radios • LMDS • SATCOM Functional Diagram General Description The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier (LNA) in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match, preserving MMIC chip performance. Utilizing a GaAs PHEMT process the device offers 2.6 dB noise figure, 15 dB gain and +13 dBm output power from a bias supply of +4V @ 45 mA. As an alternative to chip-and-wire hybrid assemblies the HMC268LM1 eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer. All data is with the non-hermetic, epoxy sealed LM1 packaged LNA device mounted in a 50 ohm test fixture. Electrical Specifications, TA = +25° C, Vdd= +4V* Parameter Frequency Range** Gain Noise Figure Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) S a t u r a t e d O u t p u t Po w e r ( P s a t ) Output Third Order Intercept (IP3) Supply Current (I d d) 26 7 13 13 11 Min. Typ. 20 - 26 14 2.5 8 12 33 11 16 22 45 50 23 9 14 17 17 3.2 13 Max. Min. Typ. 26 - 30 15 2.6 7 8 28 13 17 22 45 50 23 9 15 15 18 3.4 12 Max. Min. Typ. 30 - 32 15 2.8 7 7 28 13 18 21 45 50 18 3.8 Max. Units GHz dB dB dB dB dB dBm dBm dBm mA * Vdd = +4V, adjust Vgg1 & Vgg2 between -2.0 to 0.0 Vdc to achieve ldd = 45 mA. ** Acceptable gain and NF performance is achievable down to 17 GHz. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com 1 - 30 MICROWAVE CORPORATION v03.1201 HMC268LM1 SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz GaAs MMIC SUB-HARMONICALLY Gain PUMPED Broadband Gain & Return Loss 20 15 10 15 20 MIXER 17 - 25 GHz 1 AMPLIFIERS - SMT 1 - 31 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 10 15 20 25 GAIN (dB) 35 S21 S11 S22 10 5 0 30 15 20 25 FREQUENCY (GHz) 30 35 FREQUENCY (GHz) Isolation 0 Input Return Loss 0 REVERSE ISOLATION (dB) -10 INPUT RETURN LOSS (dB) -5 -20 -10 -30 -15 -40 -50 15 20 25 FREQUENCY (GHz) 30 35 -20 15 20 25 FREQUENCY (GHz) 30 35 Noise Figure 5 +85 C Output Return Loss 0 4 NOISE FIGURE (dB) OUTPUT RETURN LOSS (dB) -5 3 -10 2 +25 C 1 -40 C -15 0 20 22 24 26 28 30 32 34 FREQUENCY (GHz) -20 15 20 25 FREQUENCY (GHz) 30 35 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com MICROWAVE CORPORATION v03.1201 HMC268LM1 SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz 1 AMPLIFIERS - SMT Output P1dB vs. Temperature 20 18 16 P1dB OUTPUT (dBm) 14 12 10 8 6 4 2 0 20 22 24 26 28 30 32 FREQUENCY (GHz) +85C -40C +25C Output IP3 vs. Temperature 30 THIRD ORDER INTERCEPT (dBm) -40C 25 20 +25C 15 +85C 10 20 22 24 26 28 30 32 FREQUENCY (GHz) PSAT vs. Temperature 20 18 16 14 Psat (dBm) 12 10 8 6 4 2 0 20 22 24 26 28 30 32 FREQUENCY (GHz) +85C -40C +25C 1 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com MICROWAVE CORPORATION v03.1201 HMC268LM1 SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz Absolute Maximum Ratings Supply Voltage (Vdd) Supply Current (ldd) Gate Bias Voltage (Vgg1 & 2) DC Gate Current (lgg1 & 2) Input Power (RFin) (Vdd = +4V, RF power applied