HMC279MS8G

v02.0701 HMC279MS8G GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz Features High Gain: 36 dB Psat Output Power: +14 dBm Single Supply: +3V @ 60 mA Ultra Small Package: MSOP8G No External Matching Required 8 AMPLIFIERS - SMT Typical Applications The HMC279MS8G is ideal for: • 2.6 - 2.7 GHz MMDS • 3.5 GHz Wireless Local Loop • 3.7 - 4.2 GHz Satellite (Receive and Transmit Bands) Functional Diagram General Description The HMC279MS8G is a +3V GaAs MMIC driver amplifier covering the 2.5 - 4.2 GHz frequency range. The device is packaged in a low cost, surface mount MSOP plastic package with an exposed base paddle for improved RF ground. The amplifier provides greater than 36dB gain and +14 dBm P1dB while operating from a single +3V supply at only 60mA. No external components are required and the amplifier occupies less than 0.023 sq. in. (14.6 sq. mm). All data is taken with the amplifier assembled into a 50 ohm test fixture with the exposed ground paddle connected to RF ground. Electrical Specifications, TA = +25° C, Vdd= +3V Parameter Frequency Range Gain Gain Variation over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 5 5 44 8 11 17 33 Min. Typ. 2.5 - 3.7 36 ±0.03 10 9 52 12 14 22 5 60 8 40 ±0.045 6 8 42 9 11 15 35 Max. Min. Typ. 3.7 - 4.2 38 ±0.03 11 13 48 12 14 20 5 60 8 41 ±0.045 Max. Units GHz dB dB/°C dB dB dB dBm dBm dBm dB mA 8-2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v02.0701 HMC279MS8G GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz Broadband Gain & Return Loss 45 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 1 2 Gain vs. Temperature 44 42 40 38 36 S21 -40 C 8 AMPLIFIERS - SMT 8-3 RESPONSE (dB) S21 S22 S11 GAIN (dB) 34 32 30 28 26 24 22 20 S21 +25 C S21 +85 C 3 4 5 6 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 Input Match vs. Temperature 0 INPUT RETURN LOSS (dB) -5 S11 -40 C -10 ISOLATION (dB) -20 -30 S12 -40 C -40 S12 +85 C -50 -60 S12 +25 C -70 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) -15 S11 +25 C -20 S11 +85 C -25 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) Noise Figure vs. Temperature 10 Output Match vs. Temperature 0 8 OUTPUT RETURN LOSS (dB) +85 C +25 C -5 S22 +85 C S22 -40 C -10 NOISE FIGURE (dB) 6 4 -15 2 -40 C 0 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) -20 S22 +25 C -25 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v02.0701 HMC279MS8G GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz 8 AMPLIFIERS - SMT Power Compression @ 3.5 GHz 20 45 Power Compression @ 4 GHz 20 45 OUTPUT POWER (dBm) 15 40 OUTPUT POWER (dBm) 15 40 GAIN (dB) GAIN (dB) 10 35 10 35 5 30 5 30 0 -40 -35 -30 -25 -20 25 -15 0 -40 25 -35 -30 -25 -20 -15 INPUT POWER (dBm) INPUT POWER (dBm) Psat vs. Temperature 17 -40 C 16 15 14 13 12 11 10 9 2 2.5 3 3.5 4 4.5 5 +85 C +25 C P1dB vs. Temperature 17 16 15 P1dB (dBm) Psat (dBm) -40 C 14 13 12 11 10 9 2 2.5 3 3.5 4 4.5 5 +25 C +85 C FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature Frequency (GHz) Temperature -40 °C +25 °C +85 °C All levels in dBm 3.4 23.80 24.00 25.58 3.8 22.13 23.42 24.83 4.2 23.92 20.82 22.23 Spur Data @ P1dB Output (3.8 GHz) Spur Data at P1dB 2FO -31 3FO -46.5 4FO -56.5 5FO -92.3 6FO -102.33 All power levels are in dBc with respect to the output power (FO) 8-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v02.0701 HMC279MS8G GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (Vdd = + 3.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 20 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +8.0 Vdc -10 dBm 150 °C 1.3 W 8 AMPLIFIERS - SMT NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1. 50 °C/W -65 to +150 °C -40 to +85 °C Outline Drawing For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8-5 v02.0701 HMC279MS8G GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz 8 AMPLIFIERS - SMT Evaluation PCB List of Material Item J1, J2 J3 U1 PCB* Description PC Mount SMA Connector DC Pin HMC279MS8G Amplifier 102810 Evaluation Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. *Circuit Board Material: Roger 4350 8-6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v02.0701 HMC279MS8G GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz Notes: 8 AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8-7