HMC294_10

HMC294 v01.0300 Typical Applications The HMC294 is ideal for: • Microwave Point-to-Point Radios 3 MIXERS - CHIP • LMDS • SATCOM Functional Diagram ED U IN NT T O SC DUC DI RO P Features Input IP3: +20 dBm LO / RF Isolation: 27 dB Passive: No DC Bias Required Small Size: 0.88 mm x 1.93 mm GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz w r Ne o ed f Description General d men HMC294 chip is a miniature passive GaAs The om Rec MMIC double-balanced mixer which can be used Not as an upconverter or downconverter from 25 - 40 GHz in a small chip area of 1.70 mm2. Excellent isolations are provided by on-chip baluns, which require no external components and no DC bias. All data is measured with the chip in a 50 ohm test fixture connected via 0.076 mm (3 mil) gold ribbon of minimal length 110 105 106 2 3 4 14 INPUT P1dB 0 1 2 12 10 -55 C 3 4 8 +25 C +85 C RF = 35 GHz @ -10 dBm LO = 34 GHz @ +14 dBm All values in dBc below the IF power level. 40 6 20 25 30 FREQUENCY (GHz) 35 3-3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC294 v01.0300 Absolute Maximum Ratings RF / IF Input LO Drive +13 dBm +27 dBm Storage Temperature Operating Temperature Outline Drawing Die Packaging Information [1] Standard WP-4 Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004”. 3. TYPICAL BOND PAD IS .004” SQUARE. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-4 MIXERS - CHIP ED U IN NT T O SC DUC DI RO P -65 to +150 °C -55 to +125 °C GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz D New r d fo e end m com e ot R N s sign e 3 HMC294 v01.0300 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 3 MIXERS - CHIP w r Ne Microstrip substrates should be brought as close to the die as possible in order to o f minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm ed d (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length