HMC300LM1

HMC300LM1

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC300LM1 - SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz - Hittite Microwave Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC300LM1 数据手册
HMC300LM1 v02.1201 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz 8 AMPLIFIERS - SMT Typical Applications This amplifier is ideal for use as a power amplifier for 25.5 - 33.5 GHz applications: • LMDS • Microwave Radio Features SMT mmWave Package Gain > 15 dB Broadband Performance Saturated Output Power: +24 dBm Positive Supply: +5V to +7V Functional Diagram General Description The HMC300LM1 is a broadband surface mount medium power amplifier that operates between 25.5 and 33.5 GHz. A 0.25 um power pHEMT process is used to achieve efficient gain and output power performance. High volume surface mount re-flow assembly techniques may be used to mount the amplifier to the end user’s PCB. The LM1 package eliminates the need for wire bonding or die attach mounting. The amplifier provides 15 dB of gain and +24 dBm of saturated output power across various microwave radio bands. This millimeter wave amplifier requires no external RF matching components and minimal DC bypass components. The amplifier operates from a +6V Vdd and a 0.35V Vgg gate bias. Electrical Specifications, TA = +25° C, Vdd = +6V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) (Two-tone Input Power = -5 dBm each tone) Supply Current (Idd)(Vdd = +6.0 Vdc)* 5 5 35 20 21 21 13 Min. Typ. 25.5 - 33.5 16 0.06 8 8 50 23 24 26 220 275 22 0.07 Max. Units GHz dB dB/°C dB dB dB dBm dBm dBm mA *Adjust Vgg 1 between -1.0 to 0V to achieve Idd = 220 mA typical. 8 - 28 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC300LM1 v02.1201 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 Gain vs. Temperature @ Vdd = +6V 25 8 AMPLIFIERS - SMT 8 - 29 20 GAIN (dB) 5 0 -5 -10 -15 -20 -25 20 25 30 S21 S11 S22 15 10 +25 C +85 C -40 C 5 0 35 40 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ Vdd = +6V 0 Output Return Loss vs. Temperature @ Vdd = +6V 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 -5 -10 -15 +25 C +85 C -40 C -15 +25 C -40 C +85 C -20 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) -20 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) P1dB Output Power vs. Temperature @ Vdd = +6V 30 25 Output P1dB (dBm) 20 15 10 5 0 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) +25 C +85 C -40 C Output IP3 vs. Temperature @ Vdd = +6V THIRD ORDER INTERCEPT POINT (dBm) 35 30 25 20 15 10 5 0 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) +25 C +85 C -40 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC300LM1 v02.1201 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz 8 AMPLIFIERS - SMT Gain vs. Vdd 25 Input Return Loss vs. Vdd 0 20 RETURN LOSS (dB) -5 GAIN (dB) 15 -10 10 Vdd=+5V Vdd=+6V Vdd=+7V -15 5 Vdd=+5V Vdd=+6V Vdd=+7V 0 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) -20 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) Output Return Loss vs. Vdd 0 P1dB Output Power vs. Vdd 30 25 RETURN LOSS (dB) Output P1dB (dBm) -5 20 15 10 5 0 Vdd=+5V Vdd=+6V Vdd=+7V -10 -15 Vdd=+5V Vdd=+6V Vdd=+7V -20 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) PSAT Output Power vs. Vdd 30 25 20 15 10 5 0 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) Vdd=+5V Vdd=+6V Vdd=+7V IP3 vs. Vdd THIRD ORDER INTERCEPT POINT (dBm) 35 30 25 20 15 10 5 0 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) Vdd=+5V Vdd=+6V Vdd=+7V Psat (dBm) 8 - 30 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC300LM1 v02.1201 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2) Drain Bias Current (Idd) Gate Bias Voltage (Vgg1) RF Input Power (RFin)(Vdd = +6.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 15.03 mW/°C above 85 °C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +5.0 Vdc 500 mA -2.0 to +0.4 Vdc +17 dBm 150 °C 0.977 W 67 °C/W -65 to +150 °C -40 to +85°C 8 AMPLIFIERS - SMT NOTES: 1. MATERIAL: PLASTIC 2. PLATING: GOLD OVER NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. ALL TOLERANCES ARE ± 0.005 [± 0.13]. 5. ALL GROUNDS MUST BE SOLDERED TO PCB RF GROUND. 6. Outline Drawing Pin 1 2 3 4 5 6 7 8 Function GND Vdd1 Vdd2 RF OUT GND Vgg1 GND RF IN • INDICATES PIN 1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 31 HMC300LM1 v02.1201 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz 8 AMPLIFIERS - SMT Evaluation PCB The grounded Co-Planar Wave Guide (CPWG) PCB input/output transitions allow use of Ground-Signal-Ground (GSG) probes for testing. Suggested probe pitch is 400μm (16 mils). Alternatively, the board can be mounted in a metal housing with 2.4 mm coaxial connectors. Evaluation Circuit Board Layout Design Details Layout Technique Material Dielectric Thickness Microstrip Line Width CPWG Line Width CPWG Line to GND Gap Ground Via Hole Diameter C1 C2 Micro Strip to CPWG Rogers 4003 with 1/2 oz. Cu 0.008” (0.20 mm) 0.018” (0.46 mm) 0.016” (0.41 mm) 0.005” (0.13 mm) 0.008” (0.20 mm) 100 pF Capacitor, 0402 Pkg. 33,000 pF Capacitor, 1206 Pkg. LM1 Package Mounted to Evaluation PCB For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 32 HMC300LM1 v02.1201 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz Suggested LM1 PCB Land Pattern Tolerance: ± 0.003” (± 0.08 mm) 8 AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 33 HMC300LM1 v02.1201 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz 8 AMPLIFIERS - SMT Application Circuit Recommended Component Values C1 C2 100 pF 33,000 pF Note: Vgg1 should be applied to Pin 6 to provide appropriate bias level to Amplifier. Voltage level should be adjusted until nominal Idd of 220 mA is reached. 8 - 34 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC300LM1 v02.1201 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz Recommended SMT Attachment Technique Preparation & Handling of the LM1 Millimeterwave Package for Surface Mounting 225 8 200 175 150 125 100 75 The HMC LM1 package was designed to be compatible with high volume surface mount PCB assembly processes. The LM1 package requires a specific mounting pattern to allow proper mechanical attachment and to optimize electrical performance at millimeterwave frequencies. This PCB layout pattern can be found on each LM1 product data sheet. It can also be provided as an electronic drawing upon request from Hittite Sales & Application Engineering. Follow these precautions to avoid permanent damage: 50 Cleanliness: Observe proper handling procedures to 25 ensure 0 1 2 3 4 5 6 7 8 clean devices and PCBs. LM1 devices should remain in TIME (min) their original packaging until component placement to ensure no contamination or damage to RF, DC & ground Recommended solder reflow profile contact areas. for HMC LM1 SMT Package Static Sensitivity: Follow ESD precautions to protect against ESD strikes. General Handling: Handle the LM1 package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoid damaging the RF, DC, & ground contacts on the package bottom. Do not apply excess pressure to the top of the lid. Solder Materials & Temperature Profile: Follow the information contained in the application note. Hand soldering is not recommended. Conductive epoxy attachment is not recommended. Solder Paste Solder paste should be selected based on the user’s experience and should be compatible with the metallization systems used. See the LM1 data sheet Outline drawing for pin & ground contact metallization schemes. Solder Paste Application Solder paste is generally applied to the PCB using either a stencil printer or dot placement. The volume of solder paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical & electrical performance. Excess solder may create unwanted electrical parasitics at high frequencies. Solder Reflow The soldering process is usually accomplished in a reflow oven but may also use a vapor phase process. A solder reflow profile is suggested above. Prior to reflowing product, temperature profiles should be measured using the same mass as the actual assemblies. The thermocouple should be moved to various positions on the board to account for edge and corner effects and varying component masses. The final profile should be determined by mounting the thermocouple to the PCB at the location of the device. Follow solder paste and oven vendor’s recommendations when developing a solder reflow profile. A standard profile will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to thermal shock. Allow enough time between reaching pre-heat temperature and reflow for the solvent in the paste to evaporate and the flux to completely activate. Reflow must then occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 15 seconds. Packages have been qualified to withstand a peak temperature of 235°C for 15 seconds. Verify that the profile will not expose device to temperatures in excess of 235°C. Cleaning A water-based flux wash may be used. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 35 AMPLIFIERS - SMT TEMPERATURE ( C) 0
HMC300LM1
1. 物料型号: - 型号为HMC300LM1,是一款表面贴装中功率GaAs MMIC放大器,工作频率范围为25.5 - 33.5 GHz。

2. 器件简介: - HMC300LM1是一款宽带表面贴装中功率放大器,使用0.25微米功率pHEMT工艺实现高效的增益和输出功率性能。该放大器适用于25.5至33.5 GHz的应用,如LMDS和微波无线电。它提供15 dB的增益和+24 dBm的饱和输出功率,并且不需要外部射频匹配组件和最少的直流旁路组件。

3. 引脚分配: - 1: GND(地) - 2: Vdd1(漏极偏置电压1) - 3: Vdd2(漏极偏置电压2) - 4: RF OUT(射频输出) - 5: GND(地) - 6: Vgg1(栅极偏置电压1) - 7: GND(地) - 8: RFIN(射频输入)

4. 参数特性: - 增益:13 dB至22 dB - 温度下的增益变化:0.06 dB/°C - 输入回波损耗:5 dB至8 dB - 输出回波损耗:5 dB至8 dB - 反向隔离:35 dB至50 dB - 输出1 dB压缩点(P1dB):20 dBm至23 dBm - 饱和输出功率(Psat):21 dBm至24 dBm - 输出三阶截取点(IP3):21 dBm至26 dBm - 供电电流(Iddd):220 mA至275 mA

5. 功能详解: - HMC300LM1放大器适用于毫米波频段,具有高增益和饱和输出功率,适用于多种微波无线电频段。它工作在+6V的Vdd和-0.35V的Vgg门偏置下,不需要外部RF匹配组件和最少的直流旁路组件。

6. 应用信息: - 该放大器适用于需要高增益和输出功率的应用,如LMDS和微波无线电。它还可以用于需要宽带性能和饱和输出功率的场景。

7. 封装信息: - 封装类型为SMT(表面贴装技术),具体尺寸和公差信息在PDF中有详细图纸说明。所有接地必须焊接到PCB射频地。封装材料为塑料,镀层为镍上镀金,尺寸以英寸[毫米]表示,所有公差为±0.005[±0.13]。
HMC300LM1 价格&库存

很抱歉,暂时无法提供与“HMC300LM1”相匹配的价格&库存,您可以联系我们找货

免费人工找货