HMC308_08

HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Features Gain: 18 dB P1dB Output Power: +17 dBm@ +5V Single Supply: +3V or +5V No External Components Integrated DC Blocks Ultra Small Package: SOT26 Typical Applications 5 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Broadband or Narrow Band Applications: • Cellular/PCS/3G • Fixed Wireless & Telematics • Cable Modem Termination Systems • WLAN, Bluetooth & RFID Functional Diagram General Description The HMC308 & HMC308E are low cost MESFET MMIC amplifiers that operate from a single +3 to +5V supply from 0.8 to 3.8 GHz. The surface mount SOT26 amplifier can be used as a broadband amplifier stage or used with external matching for optimized narrow band applications. With Vdd biased at +5V, the HMC308 & HMC308E offers 18 dB of gain and +20 dBm of saturated output power while requiring only 53 mA of current. This amplifier is ideal as a driver amplifier for transmitters or for use as a local oscillator (LO) amplifier to increase drive levels for passive mixers. The amplifier occupies 0.014 in2 (9 mm2), making it ideal for compact radio designs. Electrical Specifi cations, TA = +25° C, as a function of Vdd Parameter Frequency Range Gain Gain Variation over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 23 12 13 Vdd = +3V Min. Typ. 2.3 - 2.7 15.5 0.025 11 17 14 17 26 7 50 27 14 0.035 14 Max. Min. Vdd = +5V Typ. 0.8 - 2.3 18 0.025 8 13 17 20 30 7.5 53 26 13.5 0.035 13 Max. Min. Vdd = +5V Typ. 2.3 - 2.7 16 0.025 11 12 16.5 19.5 29 7 53 24 12 0.035 10 Max. Min. Vdd = +5V Typ. 2.7 - 3.8 13 0.025 13 13 15 17 27 7 53 0.035 Max. Units GHz dB dB/°C dB dB dBm dBm dBm dB mA 5-2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Broadband Gain & Return Loss @ Vdd = +5V 30 20 RESPONSE (dB) 10 0 -10 -20 -30 0.5 S11 S21 S22 P1dB vs. Vdd Bias 24 20 16 12 8 4 0 0.5 Vdd=+5V Vdd=+3V 5 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 5-3 1 1.5 2 2.5 3 3.5 4 4.5 5 P1dB (dBm) 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Gain vs. Temperature @ Vdd = +5V 24 20 16 12 8 4 0 0.5 +25 C +85 C -40 C Gain vs. Temperature @ Vdd = +3V 24 20 16 12 8 4 0 0.5 +25 C +85 C -40 C GAIN (dB) 1 1.5 2 2.5 3 3.5 4 GAIN (dB) 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Input & Output Return Loss vs. Vdd Bias 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 0.5 Reverse Isolation vs. Vdd Bias 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 0.5 Vdd=+5V Vdd=+3V S11 Vdd=+5V S22 Vdd=+5V S11 Vdd=+3V S22 Vdd=+3V 1 1.5 2 2.5 3 3.5 4 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Power Compression @ 2.5 GHz, Vdd = +5V 28 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 2.0 GHz, Vdd = +5V Pout (dBm), GAIN (dB), PAE (%) 5 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 28 24 20 16 12 8 4 0 -4 -20 -18 -16 -14 -12 -10 -8 Pout Gain PAE 24 20 16 12 8 4 0 -4 -20 -18 -16 -14 -12 -10 -8 Pout Gain PAE -6 -4 -2 0 2 4 6 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) INPUT POWER (dBm) Psat vs. Temperature @ Vdd = +5V 24 Output P1dB vs. Temperature @ Vdd = +5V 24 20 P1dB (dBm) Psat (dBm) 20 16 +25 C +85 C -40 C 16 +25 C +85 C -40 C 12 12 8 8 4 0.5 1 1.5 2 2.5 3 3.5 4 4 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature @ Vdd = +5V 38 34 30 IP3 (dBm) 26 22 18 14 10 6 0.5 +25 C +85 C -40 C 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 5-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Power Compression @ 2.5 GHz, Vdd = +3V 28 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 2.0 GHz, Vdd = +3V 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE 24 20 16 12 8 4 0 -4 -20 -18 -16 -14 -12 -10 -8 Pout Gain PAE 5 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 5-5 -6 -4 -2 0 2 4 6 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) INPUT POWER (dBm) Psat vs. Temperature @ Vdd = +3V 24 Output P1dB vs. Temperature @ Vdd = +3V 24 20 P1dB (dBm) Psat (dBm) 20 16 +25 C +85 C -40 C 16 12 12 +25 C +85 C -40 C 8 8 4 0.5 1 1.5 2 2.5 3 3.5 4 4 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature @ Vdd = +3V 38 34 30 IP3 (dBm) 26 22 18 14 10 6 0.5 +25 C +85 C -40 C 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Typical Supply Current vs. Vdd Vdd (Vdc) +2.5 +3.0 +3.5 +4.5 Idd (mA) 49 50 51 50 53 54 Absolute Maximum Ratings 5 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 6.25 mW/°C above 85 °C) Thermal Resistance (channel to lead) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +7.0 Vdc +10 dBm 150 °C 0.406 W 160 °C/W -65 to +150 °C -40 to +85 °C Class 1A +5.0 +5.5 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND Package Information Part Number HMC308 HMC308E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H308 XXXX 308E XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 5-6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Pin Descriptions Pin Number Function Description Interface Schematic 5 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 5-7 1 RFOUT This pin is AC coupled and matched to 50 Ohms. 2, 5, 6 GND These pins must be connected to RF/DC ground. 3 Vdd Power supply voltage. 4 RFIN This pin is AC coupled and matched to 50 Ohms. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Evaluation PCB 5 DRIVER & GAIN BLOCK AMPLIFIERS - SMT List of Materials for Evaluation PCB 103802 [1] Item J1, J2 J3, J4 U1 PCB [2] Description PCB Mount SMA Connector DC Pins HMC308 / HMC308E Amplifier 103220 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. 5-8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Notes: 5 DRIVER & GAIN BLOCK AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5-9