HMC311LP3E

HMC311LP3 / 311LP3E v04.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Typical Applications Features P1dB Output Power: +15.5 dBm Output IP3: +32 dBm Gain: 14.5 dB 50 Ohm I/O’s 16 Lead 3x3mm SMT Package: 9mm2 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT The HMC311LP3(E) is ideal for: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV & Cable Modem • Microwave Radio Functional Diagram General Description The HMC311LP3(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers. This 3x3mm QFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3(E) offers 14.5 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifi cations, Vs= 5V, Rbias= 22 Ohm, TA = +25° C Parameter Gain DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 1.0 GHz 1.0 - 3.0 GHz 3.0 - 6.0 GHz DC - 6 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 6 GHz 13.5 12.0 10.0 Min. 13.0 12.5 12.0 Typ. 14.5 14.3 14.0 0.005 0.008 0.012 13 11 15 18 15.5 15.0 13.0 32 30 28 24 4.5 55 74 0.008 0.012 0.016 Max. Units dB dB dB dB/ °C dB/ °C dB/ °C dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dB mA Gain Variation Over Temperature Return Loss Input / Output Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 9-8 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC311LP3 / 311LP3E v04.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 0 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) Gain vs. Temperature 20 9 +25 C +85 C -40 C 17 14 11 8 5 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 +25 C +85 C -40 C -5 +25 C +85 C -40 C -10 -15 -15 -20 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) -20 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) Noise Figure vs. Temperature 10 +25C +85C -40C -5 +25 C +85 C -40 C 8 NOISE FIGURE (dB) -10 6 -15 4 -20 2 -25 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9-9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT GAIN (dB) S21 S11 S22 HMC311LP3 / 311LP3E v04.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT P1dB vs. Temperature 20 Psat vs. Temperature 20 16 P1dB (dBm) Psat (dBm) 16 12 12 +25 C +85 C -40 C 8 +25 C +85 C -40 C 8 4 4 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Power Compression @ 1 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 15 10 5 0 -5 -10 -20 -18 -16 -14 -12 -10 -8 Pout Gain PAE Power Compression @ 6 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 15 10 5 0 -5 -10 -20 -18 -16 -14 -12 -10 -8 Pout Gain PAE -6 -4 -2 0 2 4 6 8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 34 30 26 IP3 (dBm) 22 18 14 10 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25 C +85 C -40 C Gain, Power, Output IP3 & Supply Current vs. Supply Voltage @ 1 GHz GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 40 35 30 25 Icq (mA) 20 15 10 5 0 4.5 4.75 5 Vs(V) 5.25 0 5.5 20 40 60 80 9 - 10 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC311LP3 / 311LP3E v04.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFIN)(Vs = +5V) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 5.21 mW/°C above 85 °C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +7V +10 dBm 150 °C 0.339 W 192 °C/W -65 to +150 °C -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC311LP3 HMC311LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 311 XXXX 311 XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 11 HMC311LP3 / 311LP3E v04.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Pin Descriptions 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Pin Number 1, 2, 4 - 9, 11 - 16 Function N/C Description This pin may be connected to RF ground. Interface Schematic 3 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 10 RFOUT RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. Application Circuit Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.8 Rbias Recommended Component Values Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 μF 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5200 3.3 nH 100 pF 5800 3.3 nH 100 pF 9 - 12 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC311LP3 / 311LP3E v04.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Evaluation PCB 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 13 J3 Pin Number 1, 2, 3 4, 5, 6 Description Vs GND List of Materials for Evaluation PCB 106789 [1] Item J1 - J2 J3 C1, C2 C3 R1 L1 U1 PCB [2] Description PC Mount SMA Connector 2 mm DC Header Capacitor, 0402 Pkg. 10,000 pF Capacitor, 0805 Pkg. 22 Ohm Resistor, 0805 Pkg. Inductor, 0805 Pkg. HMC311LP3 / HMC311LP3E 106493 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com