HMC313

v02.0703 MICROWAVE CORPORATION HMC313 Features P1dB Output Power: +14 dBm Output IP3: +27 dBm Gain: 17 dB Single Supply: +5V High Reliability GaAs HBT Process Ultra Small Package: SOT26 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz 8 AMPLIFIERS - SMT Typical Applications Ideal as a Driver & Amplifier for: • 2.2 - 2.7 GHz MMDS • 3.5 GHz Wireless Local Loop • 5.0 - 6.0 GHz UNII & HiperLAN Functional Diagram General Description The HMC313 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operates from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313 offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current. The “HMC313 Biasing and Impedance Matching Techniques” application note available within the “Application Notes” section offers recommendations for narrow band operation. Electrical Specifications, TA = +25 °C Vcc = +5V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) @ 1.0 GHz Saturated Output Power (Psat) @ 1.0 GHz Output Third Order Intercept (IP3) @ 1.0 GHz Noise Figure Supply Current (Icc) 24 11 14 Typ. DC - 6 17 0.02 7 6 30 14 15 27 6.5 50 20 0.03 Max. GHz dB dB/°C dB dB dB dBm dBm dBm dB mA Units 8 - 68 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0703 HMC313 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 0 1 2 3 4 5 6 7 FREQUENCY (GHz) 0 0 1 2 3 4 5 6 7 FREQUENCY (GHz) 5 + 25 C + 85 C - 40 C Gain vs. Temperature 25 8 AMPLIFIERS - SMT 8 - 69 20 S11 S21 S22 GAIN (dB) ISOLATION (dB) 5 6 7 15 10 Input & Output Return Loss 0 Reverse Isolation 0 -10 RETURN LOSS (dB) -5 -20 -10 -30 -15 S11 S22 -40 -20 0 1 2 3 4 FREQUENCY (GHz) -50 0 1 2 3 4 5 6 7 FREQUENCY (GHz) P1dB vs. Temperature 25 + 25 C + 85 C - 40 C Psat vs. Temperature 25 + 25 C + 85 C - 40 C 20 P1dB (dBm) 20 Psat (dBm) 15 15 10 10 5 5 0 0 1 2 3 4 5 6 7 FREQUENCY (GHz) 0 0 1 2 3 4 5 6 7 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0703 MICROWAVE CORPORATION HMC313 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz 8 AMPLIFIERS - SMT Output IP3 vs. Temperature 40 + 25 C + 85 C - 40 C Power Compression @ 1.0 GHz 20 Pout (dBm), Gain (dB), PAE (%) 15 10 5 0 -5 -10 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 INPUT POWER (dBm) Pout (dBm) Gain (dB) PAE (%) 35 30 IP3 (dBm) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 -2 0 2 4 FREQUENCY (GHz) Power Compression @ 3.0 GHz 20 Pout (dBm), Gain (dB), PAE (%) 15 10 5 0 -5 -10 -22 -20 -18 -16 -14 -12 -10 -8 -6 INPUT POWER (dBm) Pout (dBm) Gain (dB) PAE (%) -4 -2 0 2 8 - 70 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0703 MICROWAVE CORPORATION HMC313 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +5.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 3.99 mW/°C above 85 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature +5.5 Vdc +20 dBm 8 AMPLIFIERS - SMT NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 150 °C 0.259 W 251 °C/W -65 to +150 °C -40 to +85 °C Absolute Maximum Ratings For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 71 v02.0703 MICROWAVE CORPORATION HMC313 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz 8 AMPLIFIERS - SMT Pin Descriptions Pin Number Function Description Interface Schematic 1 RFOUT This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 2, 4-6 GND These pins must be connected to RF/DC ground. Application Circuit Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1. 2. External Blocking Capacitors are required on Pins 1 & 3. 3. See “Application Notes” section for HMC313 Application Circuit. 8 - 72 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0703 MICROWAVE CORPORATION HMC313 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Material Item J1 - J2 U1 PCB* Description PC Mount SMA Connector HMC313 Evaluation PCB 1.5” x 1.5” The circuit board used in the final applicatin should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. *Circuit Board Material: Roger 4350 The “HMC313 Biasing and Impedance Matching Techniques” application note is located in the “Application Notes” section of this Designers’ Guide. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 73