HMC313E

HMC313 / 313E v06.0109 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz Features P1dB Output Power: +14 dBm Output IP3: +27 dBm Gain: 17 dB Single Supply: +5V High Reliability GaAs HBT Process Ultra Small Package: SOT26 Included in the HMC-DK001 Designer’s Kit Typical Applications 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Ideal as a Driver & Amplifier for: • 2.2 - 2.7 GHz MMDS • 3.5 GHz Wireless Local Loop • 5 - 6 GHz UNII & HiperLAN Functional Diagram General Description The HMC313 & HMC313E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifiers that operate from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313(E) offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current. Electrical Specifi cations, TA = +25 °C, Vcc = +5.0V Vcc = +5V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) @ 1.0 GHz Saturated Output Power (Psat) @ 1.0 GHz Output Third Order Intercept (IP3) @ 1.0 GHz Noise Figure Supply Current (Icc) Note: Data taken with broadband bias tee on device output. 24 11 14 Typ. DC - 6 17 0.02 7 6 30 14 15 27 6.5 50 20 0.03 Max. GHz dB dB/°C dB dB dB dBm dBm dBm dB mA Units 9 - 26 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC313 / 313E v06.0109 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz Gain vs. Temperature 25 Gain & Return Loss 25 9 + 25 C + 85 C - 40 C 16 RESPONSE (dB) 20 7 GAIN (dB) S11 S21 S22 15 -2 10 -11 5 -20 0 1 2 3 4 5 6 7 FREQUENCY (GHz) 0 0 1 2 3 4 5 6 7 FREQUENCY (GHz) Input & Output Return Loss 0 Reverse Isolation 0 -10 RETURN LOSS (dB) -5 ISOLATION (dB) -20 -10 -30 -15 S11 S22 -40 -20 0 1 2 3 4 5 6 7 FREQUENCY (GHz) -50 0 1 2 3 4 5 6 7 FREQUENCY (GHz) P1dB vs. Temperature 25 + 25 C + 85 C - 40 C Psat vs. Temperature 25 + 25 C + 85 C - 40 C 20 P1dB (dBm) 20 PSAT (dBm) 15 15 10 10 5 5 0 0 1 2 3 4 5 6 7 FREQUENCY (GHz) 0 0 1 2 3 4 5 6 7 FREQUENCY (GHz) F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 27 DRIVER & GAIN BLOCK AMPLIFIERS - SMT HMC313 / 313E v06.0109 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz Output IP3 vs. Temperature Power Compression @ 1 GHz 20 Pout (dBm), Gain (dB), PAE (%) 15 10 5 0 -5 Pout (dBm) Gain (dB) PAE (%) 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT IP3 (dBm) 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 FREQUENCY (GHz) + 25 C + 85 C - 40 C -10 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 INPUT POWER (dBm) -2 0 2 4 Power Compression @ 3 GHz 20 Pout (dBm), Gain (dB), PAE (%) 15 10 5 0 -5 -10 -22 Pout (dBm) Gain (dB) PAE (%) -18 -14 -10 -6 INPUT POWER (dBm) -2 2 9 - 28 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC313 / 313E v06.0109 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFIN)(Vcc = +5Vdc) Junction Temperature Continuous Pdiss (T = 85 °C) (derate 3.99 mW/°C above 85 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +5.5 Vdc +20 dBm 150 °C 0.259 W 251 °C/W -65 to +150 °C -40 to +85 °C Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 29 Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND Package Information Part Number HMC313 HMC313E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H313 XXXX 313E XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC313 / 313E v06.0109 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz Pin Descriptions 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Pin Number Function Description Interface Schematic 1 RFOUT This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 2, 4-6 GND These pins must be connected to RF/DC ground. Application Circuit Recommended Bias Resistor Values for Icc = 50 mA, Rbias = (Vs - 5.0) / Icc Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 5V 0Ω 6V 20 Ω ¼W 8V 62 Ω ½W Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1. 2. External Blocking Capacitors are required on Pins 1 & 3. 9 - 30 F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC313 / 313E v06.0109 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz Evaluation PCB 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 31 List of Materials for Evaluation PCB 104217 [1] Item J1 - J2 C1 - C2 C3 L1 R1 U1 PCB [2] Description PCB Mount SMA Connector 100 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0805 Pkg. 22 nH Inductor, 0805 Pkg. 22 Ω Resistor, 0805 Pkg. HMC313 / HMC313E 104196 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25FR or Roger 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com