HMC314

厂商：
HITTITE
封装：
描述：
HMC314 - GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz - Hittite Microwave Corporation

数据手册：

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数据手册
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HMC314 数据手册

MICROWAVE CORPORATION v02.0802 HMC314 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz Features P1dB Output Power: +18 dBm Output IP3: +29 dBm Gain: 12 dB Single Supply: 5V Ultra Small Package: SOT26 8 AMPLIFIERS - SMT Typical Applications Ideal Broadband Gain Stage for: • 2.2 - 2.7 GHz MMDS • 3.5 GHz Wireless Local Loop • Low Proﬁle Portable Wireless Devices • WLAN Systems Functional Diagram General Description The HMC314 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC ampliﬁer that operates from a single positive supply. This ampliﬁer also incorporates a power down feature. When the “Vpd” pin is held low, the ampliﬁer will shut down. The surface mount SOT26 ampliﬁer can be used as a broadband gain stage for wideband applications. The ampliﬁer provides 12 dB of gain and +22 dBm of saturated power while operating from a single positive +5v supply. The HMC314 is packaged in an ultra small SOT26 package at a height of only 1.45mm. Electrical Speciﬁcations, TA = +25° C Vs = +5V, Rbias = 10 Ohm Parameter Min. Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) @ 1 GHz Saturated Output Power (Psat) @ 1 GHz Output Third Order Intercept (IP3) @ 1 GHz Switching Speed Supply Current (Icc) Control Voltage (Vpd) Control Current (Ipd) On/Off 6 2 22 15 19 26 7 Typ. 0.7 - 4.0 12 0.015 12 6 30 18 22 29 60 150 0/5 .001/12 16 0.025 Max. GHz dB dB/°C dB dB dB dBm dBm dBm ns mA Volts mA Units 8 - 74 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0802 HMC314 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz Gain & Return Loss 20 15 10 S11 S21 S22 Gain vs. Temperature 20 + 25 C + 65 C - 40 C 8 AMPLIFIERS - SMT 8 - 75 15 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 0 1 2 3 4 5 6 7 FREQUENCY (GHz) 0 0.5 5 GAIN (dB) 10 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 + 25 C + 65 C - 40 C Output Return Loss vs. Temperature 0 -5 -4 RETURN LOSS (dB) -10 RETURN LOSS (dB) -8 -15 -12 + 25 C + 65 C - 40 C -20 -16 -25 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -20 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 + 25 C + 65 C - 40 C -10 ISOLATION (dB) -20 -30 -40 -50 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0802 MICROWAVE CORPORATION HMC314 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz 8 AMPLIFIERS - SMT P1dB vs. Temperature 25 Psat vs. Temperature 25 20 20 P1dB (dBm) 15 Psat (dBm) + 25 C + 65 C - 40 C 15 10 10 + 25 C + 65 C - 40 C 5 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) FREQUENCY (GHz) Power Compression @ 1 GHz 25 Power Compression @ 3 GHz 25 Pout (dBm), Gain (dB), PAE (%) 20 15 10 5 0 -5 -8 -6 -4 Pout (dBm), Gain (dB), PAE (%) Pout (dBm) Gain (dB) PAE (%) 20 15 10 5 0 -5 Pout (dBm) Gain (dB) PAE (%) -2 0 2 4 6 8 INPUT POWER (dBm) 10 12 14 16 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) 10 12 14 16 Output IP3 vs. Temperature 40 35 30 IP3 (dBm) 25 20 15 10 5 0 0.5 + 25 C + 65 C - 40 C 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) 8 - 76 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0802 MICROWAVE CORPORATION HMC314 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage Range (Vpd) RF Input Power (RFin)(Vs = +5.0 Vdc) Junction Temperature Continuous Pdiss (T = 65 °C) (derate 6.57 mW/°C above 65 °C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature +5.0 Vdc -0.2 to 3.5 Vdc +20 dBm 150 °C 0.558 W Truth Table Vs 5V 5V Vctl 5V 0V Is 150 mA

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HMC314

### 物料型号 - 型号：HMC314 - 描述：GaAs InGaP HBT MMIC DRIVER AMPLIFIER，工作频率为0.7 - 4.0 GHz。

### 器件简介 - HMC314是一款基于GaAs InGaP异质结双极晶体管（HBT）的MMIC放大器，采用单正供电。该放大器还集成了功率降低功能。当“Vpd”引脚保持低电平时，放大器将关闭。这款表面贴装SOT26放大器可以用作宽带应用的增益阶段。放大器在单正+5V供电下提供12dB的增益和+22dBm的饱和功率。HMC314采用超小型SOT26封装，高度仅为1.45mm。

### 引脚分配 - Vs：供电电压 - Vpd：控制电压引脚，用于开启或关闭放大器 - RF Input：射频输入引脚 - RF Output：射频输出引脚

### 参数特性 - 频率范围：0.7-4.0 GHz - 增益：7-16 dB - 增益随温度变化：0.015-0.025 dB/°C - 输入回波损耗：6-12 dB - 输出回波损耗：2-6 dB - 反向隔离：22-30 dB - 1dB压缩输出功率(P1dB)：15-18 dBm - 饱和输出功率(Psat)：19-22 dBm - 输出三阶截取点(IP3)：26-29 dBm - 开关速度：60 ns - 供电电流(Icc)：150 mA - 控制电压(Vpd)：0/5 Volts - 控制电流(Ipd)：0.001/12 mA

### 功能详解 - HMC314放大器提供12dB的增益和+22dBm的饱和功率，适用于宽带应用。该放大器还具备一个关闭功能，通过控制“Vpd”引脚的电平可以开启或关闭放大器。

### 应用信息 - 典型应用：2.2-2.7 GHz MMDS、3.5 GHz无线本地环路、低轮廓便携式无线设备、WLAN系统等。

### 封装信息 - 封装类型：SOT26 - 尺寸：超小型，高度仅为1.45mm

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